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Zhen Zhang, 39Flushing, NY

Known as:
Zhe N Zhang
Related to:
Zheng Sun 49 Zheng C Yue

Zhen Zhang Phones & Addresses

Forest Hills, NY   

Stamford, CT   

Gaithersburg, MD   

Las Vegas, NV   

Reno, NV   

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Career records & work history

Lawyers & Attorneys

Zhen Zhang Photo 1

Zhen Zhang - Lawyer

Address:
443-5699178 (Office)
Licenses:
Dist. of Columbia - Active 2011
Zhen Zhang Photo 2

Zhen Zhang - Lawyer

Office:
California Public Utilities Commission
Specialties:
Environmental Law
ISLN:
1000575596
Admitted:
2004
Zhen Zhang Photo 3

Zhen Zhang - Lawyer

ISLN:
918408813
Admitted:
2004
University:
University of Michigan, B.S.
Law School:
University of Maryland, J.D.

Zhen Zhang resumes & CV records

Resumes

Zhen Zhang Photo 44

Zhen Zhang - Corona, NY

Work:
Bank of America 2006 to 2000
Senior Helpdesk Analyst S&L Aerospace Metals, LLC - Maspeth, NY 2005 to 2006
Production Support Analyst
Education:
Baruch College, City University of New York - New York, NY May 2014
MBA in Finance & International Business State University of New York at Stony Brook - Stony Brook, NY May 2003
Bachelor of Engineering in Computer Engineering
Zhen Zhang Photo 45

Zhen Zhang

Work:
Royal Bank of Scotland Dec 2010 to 2000
Consultant (contract) Genius Fund - New York, NY Oct 2010 to Dec 2010
Programmer/analyst (contract) SS&C Technologies, Inc. Financial Accelerator - Hartford, CT Jun 2009 to May 2010
Quantitative Risk Analyst (Paid Internship) Barrie &Hibbert Limited - Edinburgh May 2007 to Aug 2007
Quantitative Risk Analyst (Paid Internship)
Education:
University of Connecticut - Storrs, CT Jan 2009 to May 2010
M.S. in Mathematics University of Edinburgh - Edinburgh Oct 2006 to Nov 2007
M.S. in Financial Mathematics Central South University Sep 2002 to Jun 2006
B.S. in Mathematics and Applied Mathematics
Zhen Zhang Photo 46

Zhen Zhang - Brighton, MA

Work:
Dana-Farber Cancer Institute, Harvard Medical School Jan 2012 to 2000
Research fellow Columbia university - New York, NY Dec 2008 to Dec 2011
Associate research scientist on protein crystallography Columbia University Mar 2005 to Dec 2008
Postdoctoral research scientist on protein crystallography Baylor College of Medicine - Houston, TX Oct 2004 to Feb 2005
Postdoctoral fellow on biochemistry and protein crystallography Baylor College of Medicine - Houston, TX Jul 1999 to Oct 2004
Graduate research associate on biochemistry and protein crystallography Peking University Sep 1996 to Jun 1999
Graduate research assistant on protein crystallography
Education:
Baylor College of Medicine - Houston, TX Jul 1999 to Oct 2004
Ph.D. in Biochemistry Peking University 1996 to 1999
M.S. Jilin University - Changchun, CN Sep 1991 to Jun 1995
B.S. in Chemistry

Publications & IP owners

Us Patents

System And Methods For Processing Biological Expression Data

US Patent:
7113896, Sep 26, 2006
Filed:
May 13, 2002
Appl. No.:
10/144455
Inventors:
Zhen Zhang - Dayton MD, US
Hong Zhang - Savannah GA, US
International Classification:
G06F 17/10
US Classification:
703 2, 705 7
Abstract:
A system and method for processing information in a data set that contains samples of at least two classes using an empirical risk minimization model, wherein each sample in the data set has an importance score. In one embodiment, the method includes the step of selecting samples of a first class being labeled with class label +1 and a second class with class label −1, from the data set, prescribing an empirical risk minimization model using the selected samples with an objective function and a plurality of constraints which adequately describes the solution of a classifier to separate the selected samples into the first class and the second class, modifying the empirical risk minimization model to include terms that individually limit the influence of each sample relative to its importance score in the solution of the empirical risk minimization model, and solving the modified empirical risk minimization model to obtain the corresponding classifier to separate the samples into the first class and the second class.

Method And Apparatus For Organizing Data Sources

US Patent:
7529740, May 5, 2009
Filed:
Aug 14, 2006
Appl. No.:
11/503713
Inventors:
Yuan-chi Chang - Bayside NY, US
Lipyeow Lim - North White Plains NY, US
Min Wang - Cortlandt Manor NY, US
Zhen Zhang - Champaign IL, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G06F 17/30
US Classification:
707 3, 707200, 707204, 707205
Abstract:
A method for organizing deep Web services is provided. In one aspect, the method obtains a collection of sources and their associated attributes and/or input modes, for instance, using a crawling algorithm. The method uses this information to organize the sources into communities. A mining algorithm such as the hyperclique mining algorithm is used to obtain cliques of highly correlated attributes. A clustering algorithm such as the hierarchical agglomerative clustering algorithm is used to further cluster the cliques of attributes into larger cliques, which in the present disclosure is referred to as signatures. The sources that are associated with each signature form a community and a graph representation of the communities is constructed, where the vertices are communities and the edges are the shared attributes.

Method For Searching Deep Web Services

US Patent:
7533085, May 12, 2009
Filed:
Aug 14, 2006
Appl. No.:
11/503754
Inventors:
Yuan-chi Chang - Bayside NY, US
Lipyeow Lim - North White Plains NY, US
Min Wang - Cortlandt Manor NY, US
Zhen Zhang - Champaign IL, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G06F 17/30
US Classification:
707 3
Abstract:
A method for searching deep web services is provided. The method in one aspect allows organizing communities, sources and schema attributes in a multi-tier containment relationship; searching representative schema attributes in one or more communities; searching representative services in one or more communities; searching for related schema attributes; and searching for related communities.

Use Of Biomarkers For Detecting Ovarian Cancer

US Patent:
7605003, Oct 20, 2009
Filed:
Aug 5, 2003
Appl. No.:
10/635308
Inventors:
Daniel W. Chan - Clarksville MD, US
Zhen Zhang - Dayton MD, US
Eric Fung - Mountain View CA, US
Xiao-Ying Meng - Fremont CA, US
Assignee:
The Johns Hopkins University - Baltimore MD
Vermillion, Inc. - Fremont CA
International Classification:
G01N 33/43
G01N 33/50
G01N 33/53
G01N 30/72
US Classification:
436178, 436 64, 436153, 436171, 436173, 436811, 436813, 436815, 436824, 436825, 435 4, 435 71, 435807, 435967, 435973
Abstract:
The present invention relates to a method of qualifying ovarian cancer status in a subject comprising: (a) measuring at least one biomarker in a sample from the subject and (b) correlating the measurement with ovarian cancer status. The invention further relates to kits for qualifying ovarian cancer status in a subject.

Biomarkers For Breast Cancer

US Patent:
7951529, May 31, 2011
Filed:
Sep 16, 2005
Appl. No.:
11/662830
Inventors:
Jinong Li - Ellicott City MD, US
Carolyn N. White - Baltimore MD, US
Zhen Zhang - Dayton MD, US
Daniel W. Chan - Clarksville MD, US
Eric T. Fung - Los Altos CA, US
Xiao-Ying Meng - Fremont CA, US
Assignee:
The Johns Hopkins University - Baltimore MD
Vermillion, Inc. - Austin TX
International Classification:
C12Q 1/00
US Classification:
435 4
Abstract:
The present invention provides protein-based biomarkers and biomarker combinations that are useful in qualifying breast cancer status in a patient. In particular, the biomarkers of this invention are useful to classify a subject sample as breast cancer or non-breast cancer. The biomarkers can be detected by SELDI mass spectrometry.

Method For Forming A Protection Layer Over Metal Semiconductor Contact And Structure Formed Thereon

US Patent:
8030154, Oct 4, 2011
Filed:
Aug 3, 2010
Appl. No.:
12/849223
Inventors:
Ahmet S. Ozcan - Pleasantville NY, US
Christian Lavoie - Ossining NY, US
Zhen Zhang - Ossining NY, US
Bin Yang - Ossining NY, US
Assignee:
International Business Machines Corporation - Armonk NY
GLOBALFOUNDRIES, Inc. - Grand Cayman
International Classification:
H01L 21/8238
US Classification:
438230, 438199, 438581, 438696
Abstract:
In one embodiment, a method of forming a semiconductor device is provided that includes providing a gate structure on a semiconductor substrate. Sidewall spacers may be formed adjacent to the gate structure. A metal semiconductor alloy may be formed on the upper surface of the gate structure and on an exposed surface of the semiconductor substrate that is adjacent to the gate structure. An upper surface of the metal semiconductor alloy is converted to an oxygen-containing protective layer. The sidewall spacers are removed using an etch that is selective to the oxygen-containing protective layer. A strain-inducing layer is formed over the gate structure and the semiconductor surface, in which at least a portion of the strain-inducing layer is in direct contact with the sidewall surface of the gate structure. In another embodiment, the oxygen-containing protective layer of the metal semiconductor alloy is provided by a two stage annealing process.

Method For Forming An Soi Schottky Source/Drain Device To Control Encroachment And Delamination Of Silicide

US Patent:
8168503, May 1, 2012
Filed:
Mar 18, 2010
Appl. No.:
12/726736
Inventors:
Marwan H. Khater - Astoria NY, US
Christian Lavoie - Ossining NY, US
Bin Yang - Ossining NY, US
Zhen Zhang - Ossining NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/336
US Classification:
438300, 438285
Abstract:
A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10. 0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.

Source/Drain Technology For The Carbon Nano-Tube/Graphene Cmos With A Single Self-Aligned Metal Silicide Process

US Patent:
8242485, Aug 14, 2012
Filed:
Apr 19, 2010
Appl. No.:
12/762832
Inventors:
Josephine B. Chang - Mahopac NY, US
Christian Lavoie - Ossining NY, US
Zhen Zhang - Ossining NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 29/06
H01L 21/44
US Classification:
257 24, 257E29245, 257E21411, 257E5104, 438682
Abstract:
Electronic devices having carbon-based materials and techniques for making contact to carbon-based materials in electronic devices are provided. In one aspect, a device is provided having a carbon-based material; and at least one electrical contact to the carbon-based material comprising a metal silicide, germanide or germanosilicide. The carbon-based material can include graphene or carbon nano-tubes. The device can further include a segregation region, having an impurity, separating the carbon-based material from the metal silicide, germanide or germanosilicide, wherein the impurity has a work function that is different from a work function of the metal silicide, germanide or germanosilicide. A method for fabricating the device is also provided.

Isbn (Books And Publications)

The Urban Generation: Chinese Cinema And Society At The Turn Of The Twenty-First Century

Author:
Zhen Zhang
ISBN #:
0822340534

The Urban Generation: Chinese Cinema And Society At The Turn Of The Twenty-First Century

Author:
Zhen Zhang
ISBN #:
0822340747

Numbers, Information And Complexity

Author:
Zhen Zhang
ISBN #:
0792377656

Possible Relatives

David Zhang  Dawei Zhang  Dazhi Zhang  De K Zhang  Da Q Zhang  Dachuan Zhang  Daijun Zhang  Zhen Y Li  Zhen X Lin  Zhen W Liu 

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