Ajay Krishnan resumes & CV records
Resumes
Ajay Krishnan
Ajay Krishnan, 57Bridgewater, NJ
Ajay Krishnan Phones & Addresses
Bridgewater, NJ
Ann Arbor, MI
Austin, TX
54 Cedar Ave, Highland Park, NJ 08904 732-8461225
54D Cedar Ave, Highland Park, NJ 08904 732-8461225
Mentions for Ajay Krishnan
Publications & IP owners
Us Patents
Multilevel Metallization Process Using Polishing
US Patent:
5451551, Sep 19, 1995
Filed:
Aug 15, 1994
Appl. No.:
8/290652
Inventors:
Ajay Krishnan - Austin TX
Nalin Kumar - Austin TX
Nalin Kumar - Austin TX
International Classification:
H01L 2102
US Classification:
437241
Abstract:
A maskless process for forming a protected metal feature in a planar insulating layer of a substrate is disclosed. A first barrier material is disposed in a recess in an insulating layer, a conductive metal is disposed on the first barrier material such that the entire metal feature is positioned within the recess below the top of the recess, a second barrier material is disposed on the metal feature such that the second barrier material occupies the entire portion of the recess above the-metal feature and extends above the top surface of the insulating layer, and the second barrier material is then polished until the top of the second barrier material is in and aligned with the top of the insulating layer. As a result, the metal feature is surrounded and protected by the first and second barrier materials, and the substrate is planarized.
Multilevel Metallization Process For Electronic Components
US Patent:
5380546, Jan 10, 1995
Filed:
Jun 9, 1993
Appl. No.:
8/075062
Inventors:
Ajay Krishnan - Austin TX
Nalin Kumar - Austin TX
Nalin Kumar - Austin TX
Assignee:
Microelectronics and Computer Technology Corporation - Austin TX
International Classification:
B05D 512
US Classification:
4271261
Abstract:
A maskless process for forming a protected metal feature in a planar insulating layer of a substrate is disclosed. A first barrier material is disposed in a recess in an insulating layer, a conductive metal is disposed on the first barrier material such that the entire metal feature is positioned within the recess below the top of the recess, a second barrier material is disposed on the metal feature such that the second barrier material occupies the entire portion of the recess above the metal feature and extends above the top surface of the insulating layer, and the second barrier material is then polished until the top of the second barrier material is in and aligned with the top of the insulating layer. As a result, the metal feature is surrounded and protected by the first and second barrier materials, and the substrate is planarized.
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