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Abbas AliGrand Prairie, TX

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Suhad Alfar Waleed Alfar Sawsan K Homsi 56 Ahmed O Manha 44

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Grand Prairie, TX   

Arlington, TX   

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Career records & work history

Medicine Doctors

Abbas Ali

Specialties:
Pulmonary Disease, Internal Medicine
Work:
Aurora Medical GroupAurora Health Center West Bend
205 Vly Ave, West Bend, WI 53095
262-3381123 (phone) 262-3387681 (fax)
Site
Aurora Medical GroupAurora Advanced Health Care
1640 E Sumner St, Hartford, WI 53027
262-6704000 (phone) 262-6704901 (fax)
Site
Education:
Medical School
Dow Medical College, Karachi, Pakistan
Graduated: 1990
Procedures:
Pulmonary Function Tests
Conditions:
Pulmonary Embolism, Acute Bronchitis, Acute Sinusitis, Bacterial Pneumonia, Bronchial Asthma, Chronic Bronchitis, Emphysema, Obstructive Sleep Apnea, Pneumonia, Pulmonary Tuberculosis (TB), Sarcoidosis
Languages:
English, Spanish
Description:
Dr. Ali graduated from the Dow Medical College, Karachi, Pakistan in 1990. He works in West Bend, WI and 1 other location and specializes in Pulmonary Disease and Internal Medicine. Dr. Ali is affiliated with Aurora Medical Center Washington County, Aurora Sinai Medical Center and Aurora St Lukes Medical Center.

Abbas A. Ali

Specialties:
Internal Medicine
Work:
Sentara Medical GroupSentara Medical Group Hospitalists
600 Gresham Dr STE D, Norfolk, VA 23507
757-3883198 (phone) 757-3884242 (fax)
Site
Education:
Medical School
Topiwala Nat'l Med Coll, Univ of Mumbai, Mumbai, Maharashtra, India
Graduated: 1999
Conditions:
Acute Renal Failure, Atrial Fibrillation and Atrial Flutter, Heart Failure, Abdominal Aortic Aneurysm, Abnormal Vaginal Bleeding, Acute Bronchitis, Acute Myocardial Infarction (AMI), Acute Pancreatitis, Alcohol Dependence, Anal or Rectal Abscess, Anemia, Angina Pectoris, Anxiety Dissociative and Somatoform Disorders, Anxiety Phobic Disorders, Aortic Valvular Disease, Arterial Thromboembolic Disease, Atherosclerosis, Autism, Bacterial Pneumonia, Benign Prostatic Hypertrophy, Bipolar Disorder, Bronchial Asthma, Calculus of the Urinary System, Candidiasis, Cardiac Arrhythmia, Cardiomyopathy, Cholelethiasis or Cholecystitis, Chronic Bronchitis, Chronic Renal Disease, Cirrhosis, Conduction Disorders, Congenital Anomalies of the Heart, Constipation, Dehydration, Dementia, Depressive Disorders, Dermatitis, Diabetes Mellitus (DM), Disorders of Lipoid Metabolism, Diverticulitis, Diverticulosis, Emphysema, Endocarditis, Epilepsy, Esophagitis, Fractures, Dislocations, Derangement, and Sprains, Gastroesophageal Reflux Disease (GERD), Gastrointestinal Hemorrhage, Glaucoma, Gout, Hearing Loss, Hemolytic Anemia, Hemorrhagic stroke, Hemorrhoids, Herpes Zoster, HIV Infection, Hypertension (HTN), Hyperthyroidism, Hypothyroidism, Infectious Liver Disease, Inflammatory Bowel Disease (IBD), Intervertebral Disc Degeneration, Intestinal Obstruction, Iron Deficiency Anemia, Ischemic Bowel Disease, Ischemic Heart Disease, Ischemic Stroke, Malignant Neoplasm of Female Breast, Meningitis, Menopausal and Postmenopausal Disorders, Migraine Headache, Mitral Valvular Disease, Nephrotic Syndrome, Obstructive Sleep Apnea, Osteoarthritis, Osteomyelitis, Overweight and Obesity, Parkinson's Disease, Paroxysmal Supreventricular Tachycardia (PSVT), Pelvic Inflammatory Disease (PID), Peptic Ulcer Disease, Pericardidtis, Peripheral Nerve Disorders, Phlebitis and Thrombophlebitis, Plantar Warts, Pneumonia, Poisoning by Drugs, Meds, or Biological Substances, Prostatitis, Pulmonary Embolism, Rheumatoid Arthritis, Sarcoidosis, Schizophrenia, Septicemia, Sickle-Cell Disease, Skin and Subcutaneous Infections, Substance Abuse and/or Dependency, Systemic Lupus Erythematosus, Thoracid Aortic Aneurysm, Transient Cerebral Ischemia, Urinary Incontinence, Urinary Tract Infection (UT), Valvular Heart Disease, Varicose Veins, Venous Embolism and Thrombosis
Languages:
English
Description:
Dr. Ali graduated from the Topiwala Nat'l Med Coll, Univ of Mumbai, Mumbai, Maharashtra, India in 1999. He works in Norfolk, VA and specializes in Internal Medicine. Dr. Ali is affiliated with Sentara Norfolk General Hospital.

Abbas Ali

Specialties:
Internal Medicine
Work:
St Agnes Hospital Center Department Of Medicine
900 S Caton Ave STE 190, Baltimore, MD 21229
410-3683120 (phone) 667-2343525 (fax)
Languages:
English
Description:
Dr. Ali works in Baltimore, MD and specializes in Internal Medicine. Dr. Ali is affiliated with Saint Agnes Hospital.

License Records

Abbas Ali

Licenses:
License #: E127565 - Active
Category: Emergency medical services
Issued Date: Jan 25, 2017
Expiration Date: Jan 31, 2019
Type: San Joaquin County EMS Agency

Resumes & CV records

Resumes

Abbas Ali Photo 51

Mgts Sr. Process Engineer At Texas Instruments

Position:
Sr. Process Engineer at Texas Instruments
Location:
Dallas/Fort Worth Area
Industry:
Semiconductors
Work:
Texas Instruments since Jan 2007
Sr. Process Engineer Trikon Technologies, Inc. Mar 1996 - Mar 1997
Process Engineering Manager
Education:
University of Nebraska-Lincoln 1990 - 1997
Abbas Ali Photo 52

Mgts At Texas Instruments Inc.

Position:
MGTS - Member Group Technical Staff at Texas Instruments Inc.
Location:
Dallas/Fort Worth Area
Industry:
Semiconductors
Work:
Texas Instruments Inc. since Mar 2007
MGTS - Member Group Technical Staff Texas Instruments/ SITD, CMOS1 2001 - 2006
Plasma PE Texas Instruments KFAB Wafer Fab 1998 - 2004
Process Engineer Trikon Technologies 1997 - 1998
Process engineer
Education:
University of Nebraska-Lincoln 1990 - 1997
Master's degree, Mechanical/Electrical NED University of Engineering and Technology 1988 - 1990
BS, Mechanical Engineering
Skills:
Semiconductors, IC, Design of Experiments, ASIC, Cross-functional Team Leadership, Manufacturing, Mixed Signal, Program Management, Requirements Analysis
Languages:
Urdu
Abbas Ali Photo 53

Technical Recruiter At Confidential

Position:
Technical Recruiter at Confidential
Location:
United States
Industry:
Computer & Network Security
Work:
Confidential
Technical Recruiter
Education:
Pune Institute of Computer Technology
Abbas Ali Photo 54

Abbas Ali

Location:
United States
Abbas Ali Photo 55

Abbas Ali

Location:
United States
Abbas Ali Photo 56

Abbas Ali

Location:
United States
Abbas Ali Photo 57

Abbas Ali

Location:
United States
Abbas Ali Photo 58

Proprietário(A), Papelaria Hussene

Position:
Proprietário at papelaria hussene
Location:
Moçambique
Industry:
Construction
Work:
papelaria hussene No momento ocupa este cargo
Proprietário

Publications & IP owners

Wikipedia

Abbas Ali Photo 59

Abbas Ali

Syed Abbas Ali (born February 20, 1976), in Indore is a former Indian first class cricketer. He is a left-handed batsman. Ali debuted in 1996/97 and scored ...

Us Patents

Process For Forming A Dual Damascene Structure

US Patent:
6605540, Aug 12, 2003
Filed:
Jul 9, 2001
Appl. No.:
09/901331
Inventors:
Abbas Ali - Plano TX
Ming Yang - Richardson TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21302
US Classification:
438694, 438710, 438712, 438720, 216 72
Abstract:
The invention describes a method for forming a dual damascene structure. An etch stop layer ( ) is formed on a dielectric layer ( ). A second dielectric layer ( ) is formed on the etch stop layer ( ) and an ARC layer ( ) is formed the second dielectric layer. A first trench ( ) and a second trench ( ) are then simultaneously formed in the first and second dielectric layers ( ) and ( ) respectively.

Method Of Forming Dual-Damascene Structure

US Patent:
6774031, Aug 10, 2004
Filed:
Dec 8, 2003
Appl. No.:
10/732665
Inventors:
Abbas Ali - Plano TX
Kenneth J. Newton - McKinney TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 214763
US Classification:
438638, 438624, 438640, 438673, 438687, 438701, 438636
Abstract:
A first dielectric layer ( ) and a second dielectric layer ( ) are formed over an etch stop layer ( ). A hardmask layer ( ) is formed over the second dielectric layer and a via ( ) is formed in the first dielectric layer ( ) and the second dielectric layer ( ). A trench ( ) is formed mostly in the second dielectric layer ( ) by fully or partially removing BARC from the via ( ) are partially etching the trench ( ) and prior to completion of the trench etch process.

Process For Forming A Dual Damascene Structure

US Patent:
7112532, Sep 26, 2006
Filed:
Jun 27, 2003
Appl. No.:
10/608286
Inventors:
Abbas Ali - Plano TX, US
Ming Yang - Richardson TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21/302
US Classification:
438700, 438706, 438720
Abstract:
The invention describes a method for forming a dual damascene structure. An etch stop layer () is formed on a dielectric layer (). A second dielectric layer () is formed on the etch stop layer () and an ARC layer () is formed the second dielectric layer. A first trench () and a second trench () are then simultaneously formed in the first and second dielectric layers () and () respectively.

Low-K Dielectric Etch Process For Dual-Damascene Structures

US Patent:
7192877, Mar 20, 2007
Filed:
May 21, 2004
Appl. No.:
10/851263
Inventors:
Abbas Ali - Plano TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21/302
H01L 21/461
US Classification:
438734, 257E21579
Abstract:
A method includes performing a first etch process to form a via hole in a dual-damascene integrated circuit structure comprising a first dielectric layer and a second dielectric layer. The via hole extends at least substantially through the first and second dielectric layers. The method further includes filling at least a portion of the via hole with a plug material to form a plug within the via hole, and performing a second etch process through the first dielectric layer and the portion of the plug adjacent the first dielectric layer to form a trench in the first dielectric layer. The second etch process is performed using an RF power of less than 1,000 Watts and using an etching chemistry that includes CFand N. For example, second etch process may use an etching chemistry of CF/N/Ar, which may additionally include one or both of CO and O.

Barc/Resist Via Etchback Process

US Patent:
7232748, Jun 19, 2007
Filed:
Jul 22, 2004
Appl. No.:
10/897864
Inventors:
Abbas Ali - Plano TX, US
Assignee:
Texas Instruments Incoporated - Dallas TX
International Classification:
H01L 21/4763
US Classification:
438618, 438622, 438624, 438636, 438637
Abstract:
A BARC or other sacrificial fill layer etch comprises a selective etch chemistry of Ar/O/CO. The BARC etch may be used in a via-first dual damascene method. After via () pattern and etch, a BARC/sacrificial fill layer () is deposited to fill the via () and coat the IMD (). The excess sacrificial fill layer () material over the IMD () is removed using the Ar/O/CO etch. A trench resist pattern () is formed over the BARC layer (). During the main trench etch, portions of sacrificial fill layer () remain in the via to protect the etch-stop () at the bottom of the via ().

Method Of Planarizing A Semiconductor Device

US Patent:
8017493, Sep 13, 2011
Filed:
May 7, 2009
Appl. No.:
12/436973
Inventors:
Abbas Ali - Plano TX, US
Seetharaman Sridhar - Richardson TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21/8238
US Classification:
438424, 438591, 438589, 438303, 438301, 257306, 257301, 257305, 257E21546
Abstract:
A process of forming a semiconductor process fabricated device which contains a trench, hole or gap filled with a conformally deposited material is disclosed. A sacrificial planarizing layer is formed on the fill material, and the device is planarized using a selective RIE process which etches the fill material faster than the sacrificial planarizing layer. An overetch step completes the planarization process.

Post Chromium Alloy Plasma Etch Ashing Process

US Patent:
8440574, May 14, 2013
Filed:
Oct 12, 2009
Appl. No.:
12/577309
Inventors:
Abbas Ali - Plano TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21/28
US Classification:
438720, 216 79
Abstract:
A method for ashing hardened resist from a photoresist patterned chromium alloy post etch using a plasma ashing chemistry which contains no gaseous source of hydrogen and contains a gaseous source of oxygen and a gaseous source of nitrogen with an oxygen to nitrogen atomic ratio of at least 5.

Hsq/Sog Dry Strip Process

US Patent:
2006002, Feb 2, 2006
Filed:
Jul 29, 2004
Appl. No.:
10/903607
Inventors:
Abbas Ali - Plano TX, US
International Classification:
H01L 21/4763
US Classification:
438638000, 438637000, 438622000, 438629000
Abstract:
A spin-on dielectric () strip process. Instead of a wet strip, a dry strip process is used to remove the spin-on dielectric (). In a via-first dual damascene method, a via () may be patterned and etched and the via () is filled with the spin-on dielectric (). Then, the trench is patterned and etched while the spin-on dielectric () protects the bottom of the via (). Finally, the spin-on dielectric () is removed using a dry strip process with a low ion energy plasma.

Isbn (Books And Publications)

Globalization Of Business: Practice And Theory

Author:
Abbas Ali
ISBN #:
0789004127

Possible Relatives

A Ali  Dawud Ali  Daher Ali  Aaisha A Ali  Aalia Ali  Deborah L Ali  Aamer A Ali  Abbas A Khan  Abbas A Mirza  Abbas A Osman 

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