Allen W Hanson, 61Lowell, MA

6600179, Jul 29, 2003

Nov 1, 2001

10/004309

Anthony Francis Quaglietta - Methuen MA
Allen William Hanson - Pepperell MA
Thomas Aaron Winslow - Roanoke VA

M/A-Com, Inc. - Lowell MA

H01L 310328

257197, 257276, 257565, 257571, 257579

A semiconductor amplifier includes collector straps that form air bridges over a set of transistors and make parallel electrical connections between the collectors of the transistor and collector contact pad. Base straps establish base bias and electrically connect a dc current source with bases of the transistors through resistive elements.

6642559, Nov 4, 2003

Apr 14, 1999

09/291494

Kenneth Vern Buer - Pepperell MA
Anthony Francis Quaglietta - Methuen MA
Allen Hanson - Pepperell MA

The Whitaker Corporation - Wilmington DE

H01L 2980

257275, 257276, 438381, 438423

An isolation structure for high frequency integrated circuits is a conductive material disposed over a region of active gallium arsenide substrate. The conductive material over the active region creates a lossy RF path to reduce undesired coupling between adjacent conductors. In one case, two RF signal lines ( ) terminated at the same via pad ( ) have weaker coupling than in prior art via structures due to the lossy RF structure disposed on isolating fractional portions ( ) of the via pad ( ). The isolating fractional portion ( ) are intermediate terminating fractional portions ( ) of the via pad ( ) to which the signal lines ( ) are connected. In another case, two parallel bias lines ( ) are disposed over an active layer region ( ) increasing the RF loss between them and advantageously reducing the RF coupling. The reduced RF coupling improves RF isolation and permits increased miniaturization.

7135720, Nov 14, 2006

Aug 5, 2004

10/913297

Walter H. Nagy - Raleigh NC, US
Ricardo M. Borges - Morrisville NC, US
Jeffrey D. Brown - Charlotte NC, US
Apurva D. Chaudhari - Raleigh NC, US
Allen W. Hanson - Cary NC, US
Jerry W. Johnson - Raleigh NC, US
Kevin J. Linthicum - Cary NC, US
Edwin L. Piner - Cary NC, US
Pradeep Rajagopal - Raleigh NC, US
John C. Roberts - Hillsborough NC, US
Sameer Singhal - Apex NC, US
Robert J. Therrien - Apex NC, US
Andrei Vescan - Herzogenrath, DE

Nitronex Corporation - Raleigh NC

H01L 31/072

257192, 257194

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

7247889, Jul 24, 2007

Dec 3, 2004

11/004628

Allen W. Hanson - Cary NC, US
John Claassen Roberts - Hillsborough NC, US
Edwin L. Piner - Cary NC, US
Pradeep Rajagopal - Raleigh NC, US

Nitronex Corporation - Durham NC

H01L 31/00
H01L 21/28

257189, 257615, 257E33037, 257E33049, 438604

III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.

7352016, Apr 1, 2008

Nov 13, 2006

11/598551

Walter H. Nagy - Raleigh NC, US
Ricardo M. Borges - Morrisville NC, US
Jeffrey D. Brown - Garner NC, US
Apurva D. Chaudhari - Raleigh NC, US
James W. Cook - Raleigh NC, US
Allen W. Hanson - Cary NC, US
Jerry Wayne Johnson - Raleigh NC, US
Kevin J. Linthicum - Angier NC, US
Edwin Lanier Piner - Cary NC, US
Pradeep Rajagopal - Raleigh NC, US
John Claassen Roberts - Hillsborough NC, US
Sameer Singhal - Apex NC, US
Robert Joseph Therrien - Apex NC, US
Andrei Vescan - Herzogenrath, DE

Nitronex Corporation - Durham NC

H01L 31/00

257192, 257194

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

7566913, Jul 28, 2009

Dec 4, 2006

11/634332

Robert J. Therrien - Apex NC, US
Jerry W. Johnson - Raleigh NC, US
Allen W. Hanson - Cary NC, US

Nitronex Corporation - Durham NC

H01L 33/00

257103, 257 98, 257191, 257192, 438285

Semiconductor structures comprising a III-nitride (e. g. , gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e. g. , gold) separated from certain other region(s) of the structure (e. g. , a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e. g. , FET), Schottky diodes, light-emitting diodes and laser diodes, amongst others.

7569871, Aug 4, 2009

Mar 31, 2008

12/059182

Walter H. Nagy - Raleigh NC, US
Jerry Wayne Johnson - Raleigh NC, US
Edwin Lanier Piner - Cary NC, US
Pradeep Rajagopal - Raleigh NC, US
John Claassen Roberts - Hillsborough NC, US
Sameer Singhal - Raleigh NC, US
Robert Joseph Therrien - Apex NC, US
Andrei Vescan - Herzogenrath, DE
Ricardo M. Borges - Morrisville NC, US
Jeffrey D. Brown - Charlotte NC, US
Apurva D. Chaudhari - Raleigh NC, US
James W. Cook - Raleigh NC, US
Allen W. Hanson - Cary NC, US
Kevin J. Linthicum - Cary NC, US

Nitronex Corporation - Durham NC

H01L 31/072

257192, 257194

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

8026581, Sep 27, 2011

Feb 5, 2008

12/025976

Allen W. Hanson - Cary NC, US
Edwin Lanier Piner - Cary NC, US

International Rectifier Corporation - El Segundo CA

H01L 23/495
H01L 29/66

257675, 257 77, 257192, 257194, 257201, 257E29246, 257E29248, 257E29249

Gallium nitride material structures are provided, as well as devices and methods associated with such structures. The structures include a diamond region which may facilitate conduction and removal of heat generated within the gallium nitride material during device operation. The structures described herein may form the basis of a number of semiconductor devices and, in particular, transistors (e. g. , FETs).