Benjamin Feist resumes & CV records
Resumes
Benjamin Feist107 2Nd Ave, Shepherdsville, KY 40165
Benjamin Feist Phones & Addresses
107 2Nd Ave, Shepherdsville, KY 40165
3609 Winterhaven Dr, Newark, DE 19702 302-7924627
5808 Winterhaven Dr, Newark, DE 19702 302-3681027 302-3889765
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Publications & IP owners
Us Patents
New Metal Precursors Containing Beta-Diketiminato Ligands
US Patent:
2009019, Aug 6, 2009
Filed:
Feb 2, 2009
Appl. No.:
12/364298
Inventors:
Christian Dussarrat - Wilmington DE, US
Benjamin J. Feist - Wilmington DE, US
Benjamin J. Feist - Wilmington DE, US
International Classification:
H01L 21/3205
C07F 15/04
C07F 15/04
US Classification:
438681, 556138, 257E21295
Abstract:
Methods and compositions for depositing a metal containing thin film on a substrate comprises introducing a vapor phase metal-organic precursor into a reaction chamber containing one or more substrates. The precursor has at least one β-diketiminato ligand, and has the general formula:wherein M is a metal selected from nickel, cobalt, ruthenium, iridium, palladium, platinum, silver and gold. Each of Ris an organic ligand independently selected from H; and a C-Clinear or branched, alky group, alkylsilyl group, alkylamide group, alkoxide group, or alkylsilylamide group. Each L is independently selected from: a hydrocarbon; an oxygen-containing hydrocarbon; an amine; a polyamine; a bipyridine; an oxygen containing heterocycle; a nitrogen containing heterocycle; and combinations thereof; and n is an integer ranging from 0 to 4, inclusive.A metal containing film is deposited onto the substrate, while the substrate is maintained at a temperature between about 100 C. and about 500 C.
Compounds For Depositing Tellurium-Containing Films
US Patent:
2009025, Oct 15, 2009
Filed:
Apr 14, 2009
Appl. No.:
12/423382
Inventors:
Benjamin J. FEIST - Wilmington DE, US
Christian DUSSARRAT - Wilmington DE, US
Christian DUSSARRAT - Wilmington DE, US
Assignee:
American Air Liquide, Inc. - Fremont CA
International Classification:
H01L 45/00
C07D 293/10
H01L 21/06
C07D 293/10
H01L 21/06
US Classification:
257 2, 544 1, 438102, 257E45002, 257E21068
Abstract:
Disclosed herein are tellurium metal-organic precursors and methods for depositing tellurium-containing films on a substrate.
Beta-Diketiminate Precursors For Metal Containing Film Deposition
US Patent:
2010000, Jan 7, 2010
Filed:
Jun 8, 2009
Appl. No.:
12/480472
Inventors:
Benjamin J. FEIST - Wilmington DE, US
Christian Dussarrat - Wilmington DE, US
Vincent M. Omarjee - Bear DE, US
Christian Dussarrat - Wilmington DE, US
Vincent M. Omarjee - Bear DE, US
International Classification:
C23C 16/18
B32B 15/04
C07F 7/28
C07F 7/00
B32B 15/04
C07F 7/28
C07F 7/00
US Classification:
428457, 4272481, 42725528, 534 15, 556 32
Abstract:
Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A metal containing precursor with at least one β-diketiminate ligand is provided and introduced into the reactor, which is maintained at a temperature of at least 100 C. Metal is deposited onto the substrate through a deposition process to form a thin film on the substrate.
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