Bruce M Adams, 36Haverhill, MA

6602271, Aug 5, 2003

Dec 12, 2000

09/735140

Bruce Adams - Malden MA
Ahmed Malek - Cairo, EG
Jerry R. Brightbill - Newton MA
Nasser Rafiee - Andover MA
Nareak Douk - Lowell MA
David S. Brin - Danvers MA
Dennis L. Brooks - Windsor CA
Robert D. Lashinski - Sebastopol CA

Medtronic Ave, Inc. - Santa Rosa CA

A61M 2900

606200, 606191

The present invention is a collapsible blood filter for use during a vascular procedure, such as angioplasty or stent deployment. A filter made of braided filaments is located on the distal end of a delivery member, and the filter is deployed downstream of the vascular treatment site to capture emboli released during and immediately after the procedure. Optimal braid geometry of the filter ensures that captured emboli will be retained during collapse and removal of the filter following the procedure.

7279721, Oct 9, 2007

Apr 13, 2005

11/105270

Dean Jennings - Beverly MA, US
Haifan Liang - Fremont CA, US
Mark Yam - Monte Sereno CA, US
Vijay Parihar - Fremont CA, US
Abhilash Mayur - Salinas CA, US
Aaron Hunter - Santa Cruz CA, US
Bruce Adams - Portland OR, US
Joseph Michael Ranish - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 33/00

257 98, 257288, 257428, 257E21134, 257E21347, 257E21333, 257E21475

A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10. 6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

7595208, Sep 29, 2009

Aug 10, 2007

11/837055

Dean Jennings - Beverly MA, US
Haifan Liang - Draper UT, US
Mark Yam - Monte Sereno CA, US
Vijay Parihar - Fremont CA, US
Abhilash Mayur - Salinas CA, US
Aaron Hunter - Santa Cruz CA, US
Bruce Adams - Portland OR, US
Joseph Michael Ranish - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/00

438 31, 257E21134, 257E21347, 257E21333, 257E21475

A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10. 6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

7772134, Aug 10, 2010

Aug 24, 2009

12/546522

Dean Jennings - Beverly MA, US
Haifan Liang - Draper UT, US
Mark Yam - Monte Sereno CA, US
Vijay Parihar - Fremont CA, US
Abhilash Mayur - Salinas CA, US
Aaron Hunter - Santa Cruz CA, US
Bruce Adams - Portland OR, US
Joseph Michael Ranish - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/00

438795, 257E21134, 257E21324

A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10. 6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

7795816, Sep 14, 2010

Oct 8, 2007

11/868933

Dean Jennings - Beverly MA, US
Bruce E. Adams - Portland OR, US
Timothy N. Thomas - Portland OR, US
Stephen Moffatt - Millbrook, St. Lawrence, GB

Applied Materials, Inc. - Santa Clara CA

H05B 31/26

31511121

A laser beam is modulated at a very high frequency to produce uniform radiant flux densities on substrate surface processing regions during thermal processing. Beam modulation is achieved by passing the laser beam through a plasma which causes phase randomization within the laser beam. This method may be used for any application where intense, uniform illumination is desired, such as pulsed laser annealing, ablating, and wafer stepper illuminating.

8242407, Aug 14, 2012

Jun 28, 2010

12/825200

Dean Jennings - Beverly MA, US
Haifan Liang - Draper UT, US
Mark Yam - Monte Sereno CA, US
Vijay Parihar - Fremont CA, US
Abhilash Mayur - Salinas CA, US
Aaron Hunter - Santa Cruz CA, US
Bruce Adams - Portland OR, US
Joseph Michael Ranish - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

B23K 26/067

21912165, 21912176

A thermal processing apparatus and method in which a first laser source, for example, a COemitting at 10. 6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the COradiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

8363320, Jan 29, 2013

Apr 27, 2011

13/095758

Dean Jennings - Beverly MA, US
Timothy N. Thomas - Portland OR, US
Stephen Moffatt - Channel Islands, GB
Jiping Li - Palo Alto CA, US
Bruce E. Adams - Portland OR, US
Samuel C. Howells - Portland OR, US

Applied Materials, Inc. - Santa Clara CA

G02B 5/30

35948907

A method and apparatus for decorrelating coherent light from a light source, such as a pulsed laser, in both time and space in an effort to provide intense and uniform illumination are provided. The techniques and apparatus described herein may be incorporated into any application where intense, uniform illumination is desired, such as pulsed laser annealing, welding, ablating, and wafer stepper illuminating.

8432613, Apr 30, 2013

Apr 18, 2010

12/762351

Dean C. Jennings - Beverly MA, US
Timothy N. Thomas - Portland OR, US
Samuel C. Howells - Portland OR, US
Bruce E. Adams - Portland OR, US
Jiping Li - Palo Alto CA, US

Applied Materials, Inc. - Santa Clara CA

G02B 27/10

359626, 359622

Substrate processing equipment and methods are used to improve the uniformity of illumination across an illuminated portion of a substrate by processing light with multiple optical homogenizers. The multiple optical homogenizers each include micro-lens arrays and Fourier lens. The multiple optical homogenizers are arranged so that the output numerical aperture of one of the optical homogenizers is within 5% of the input numerical aperture of another optical homogenizer.