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Fong L Chang460 Marietta Dr, San Francisco, CA 94127

Fong Chang Phones & Addresses

460 Marietta Dr, San Francisco, CA 94127    415-5872754   

Mountain View, CA   

Mentions for Fong L Chang

Career records & work history

Medicine Doctors

Fong M. Chang

Specialties:
Cardiovascular Disease
Work:
Pasco Cardiology Center
14153 Yosemite Dr STE 202, Hudson, FL 34667
727-8685404 (phone) 727-8631787 (fax)
Site
Pasco Cardiology Center
3633 Little Rd STE 102, New Port Richey, FL 34655
727-3725952 (phone) 727-8631787 (fax)
Site
Education:
Medical School
Natl Taiwan Univ Coll of Med, Taipei, Taiwan (385 02 Prior 1/71)
Graduated: 1970
Procedures:
Cardiac Stress Test, Cardioversion, Continuous EKG, Echocardiogram, Electrocardiogram (EKG or ECG), Vaccine Administration
Conditions:
Angina Pectoris, Mitral Valvular Disease, Paroxysmal Supreventricular Tachycardia (PSVT), Abdominal Aortic Aneurysm, Acute Bronchitis, Acute Myocardial Infarction (AMI), Acute Upper Respiratory Tract Infections, Alzheimer's Disease, Anemia, Anxiety Dissociative and Somatoform Disorders, Anxiety Phobic Disorders, Aortic Aneurism, Aortic Regurgitation, Aortic Stenosis, Aortic Valvular Disease, Arterial Thromboembolic Disease, Atherosclerosis, Atrial Fibrillation and Atrial Flutter, Attention Deficit Disorder (ADD), Benign Prostatic Hypertrophy, Benign Thyroid Diseases, Bipolar Disorder, Bronchial Asthma, Candidiasis, Cardiac Arrhythmia, Cardiomyopathy, Chronic Fatigue Syndrome, Chronic Renal Disease, Cirrhosis, Conduction Disorders, Congenital Anomalies of the Heart, Depressive Disorders, Diabetes Mellitus (DM), Disorders of Lipoid Metabolism, Endocarditis, Epilepsy, Esophagitis, Fractures, Dislocations, Derangement, and Sprains, Gastroesophageal Reflux Disease (GERD), Gastrointestinal Hemorrhage, Gout, Heart Failure, Hemolytic Anemia, Hemorrhagic stroke, HIV Infection, Hypertension (HTN), Hypothyroidism, Infectious Liver Disease, Inflammatory Bowel Disease (IBD), Iron Deficiency Anemia, Ischemic Heart Disease, Macular Degeneration, Malignant Neoplasm of Female Breast, Melanoma, Migraine Headache, Mitral Stenosis, Multiple Sclerosis (MS), Osteoarthritis, Osteoporosis, Overweight and Obesity, Parkinson's Disease, Pericardidtis, Phlebitis and Thrombophlebitis, Pneumonia, Pulmonary Embolism, Rheumatoid Arthritis, Schizophrenia, Sciatica, Scoliosis or Kyphoscoliosis, Skin and Subcutaneous Infections, Spinal Stenosis, Substance Abuse and/or Dependency, Thoracid Aortic Aneurysm, Thyroid Cancer, Thyroiditis, Transient Cerebral Ischemia, Valvular Heart Disease, Venous Embolism and Thrombosis, Vitamin B12 Deficiency Anemia
Languages:
Chinese, English, German, Spanish
Description:
Dr. Chang graduated from the Natl Taiwan Univ Coll of Med, Taipei, Taiwan (385 02 Prior 1/71) in 1970. She works in Trinity, FL and 1 other location and specializes in Cardiovascular Disease. Dr. Chang is affiliated with Medical Center Trinity, Morton Plant North Bay Hospital and Regional Medical Center Bayonet Point.

Resumes & CV records

Resumes

Fong Chang Photo 35

Engineer Member Of Technical Staff

Location:
1313 Niagara Dr, San Jose, CA 95130
Industry:
Insurance
Work:
Applied Materals Jul 2, 1987 - Apr 1, 2003
Engineer Member of Technical Staff
Kolin Electrnic Jan 1, 1985 - Feb 28, 1986
Field Service Engineer
Calcam Electronic Jul 2, 1983 - Dec 31, 1985
Test Engineer
Interests:
Cooking
Medicine
Electronics
Traveling
Exercise
Home Improvement
International Traavel
Reading
Fitness
Gourmet Cooking
Food
Travel
Home Decoration
Health
Languages:
Mandarin
English
Fong Chang Photo 36

Broker

Location:
2550 Appian Way, Pinole, CA 94564
Industry:
Financial Services
Work:
Matrix Insurance Agency
Broker
World Financial Group (Wfg)
Senior Associate
Start-Up Apr 2003 - Dec 2004
Co-Founder
Applied Materials Sep 1989 - Mar 2003
Mts
Fong Chang Photo 37

Owner

Location:
Santa Clara, CA
Industry:
Insurance
Work:
Matrix Insurance Agency
Owner

Publications & IP owners

Us Patents

Wiring Arrangement Ensuring All-Or-None Operation Of A Series Of Modular Load Elements

US Patent:
6618265, Sep 9, 2003
Filed:
Oct 1, 2001
Appl. No.:
09/969202
Inventors:
Fong M. Chang - Los Gatos CA
Yu Chang - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05K 702
US Classification:
361760, 361775, 361823, 361828, 307 12, 307 29
Abstract:
All-or-none operation of a series of modular load elements is ensured by routing high and low voltage lines from a power source through opposite nodes positioned at either end of the series of load elements. This arrangement prevents activation of only a portion of the load elements where electrical connection between them is not successfully established.

Plasma Enhanced Chemical Vapor Deposition Of Copolymer Of Parylene N And Comonomers With Various Double Bonds

US Patent:
6709715, Mar 23, 2004
Filed:
Jun 17, 1999
Appl. No.:
09/336368
Inventors:
Chi-I Lang - Sunnyvale CA
Shin-Puu Jeng - Hsinchu, TW
Yeming Jim Ma - Santa Clara CA
Fong Chang - Los Gatos CA
Peter Wai-Man Lee - San Jose CA
David W. Cheung - Foster City CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
H05H 146
US Classification:
427489, 427578, 427579, 427563, 438789, 438788
Abstract:
A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2. 2 to about 2. 5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.

Method And Apparatus For Tuning A Plurality Of Processing Chambers

US Patent:
2003000, Jan 2, 2003
Filed:
Jun 29, 2001
Appl. No.:
09/896124
Inventors:
Avgerinos Gelatos - Redwood City CA, US
Joel Huston - San Jose CA, US
Lawrence Lei - Milipitas CA, US
Vicky Nguyen - San Jose CA, US
Yin Lin - Palo Alto CA, US
Fong Chang - Los Gatos CA, US
International Classification:
H01L021/36
H01L021/20
C30B001/00
US Classification:
438/485000, 438/507000, 438/935000
Abstract:
Generally, a substrate processing apparatus is provided. In one aspect of the invention, a substrate processing apparatus is provided. In one embodiment, the substrate processing apparatus includes one or more chamber bodies coupled to a gas distribution system. The chamber bodies define at least a first processing region and a second processing region within the chamber bodies. The gas distribution system includes a first, a second and a third gas supply circuit. The first gas supply circuit is teed between the first and second processing regions and is adapted to supply a first processing gas thereto. The second gas supply circuit is coupled to the first processing region and adapted to supply a second process gas thereto. The third gas supply circuit is coupled to the second processing region and is adapted to supply a third process gas thereto. Alternatively, the processing regions may be disposed in a single chamber body.

Apparatus And Method For Depositing Low K Dielectric Materials

US Patent:
6176198, Jan 23, 2001
Filed:
Nov 2, 1998
Appl. No.:
9/184934
Inventors:
Fong M. Chang - Los Gatos CA
Robert B. Majewski - Scotts Valley CA
John Parks - Richmond CA
David Wanamaker - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118723ME
Abstract:
The invention provides a deposition system and methods of depositing materials onto substrates. In one aspect, a modular processing chamber is provided which includes a chamber body defining a processing region. The chamber body includes a removable gas feedthrough, an electrical feedthrough, a gas distribution assembly mounted on a chamber lid and a microwave applicator for generating reactive gases remote from the processing region.

Methods And Apparatus For Pre-Stabilized Plasma Generation For Microwave Clean Applications

US Patent:
5939831, Aug 17, 1999
Filed:
Nov 13, 1996
Appl. No.:
8/746658
Inventors:
Gary Fong - Cupertino CA
Fong Chang - Los Gatos CA
Long Nguyen - Fremont CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B08B 600
US Classification:
31511121
Abstract:
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800. degree. C. ) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Chemical Vapor Deposition Of A Copolymer Of P-Xylylene And A Multivinyl Silicon/Oxygen Comonomer

US Patent:
6086952, Jul 11, 2000
Filed:
Jun 15, 1998
Appl. No.:
9/097365
Inventors:
Chi-I Lang - Sunnyvale CA
Yeming Jim Ma - Santa Clara CA
Fong Chang - Los Gatos CA
Peter Wai-Man Lee - San Jose CA
Shin-Puu Jeng - Hsinchu, TW
David Cheung - Foster City CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
42725529
Abstract:
A method for forming thin polymer layers having low dielectric constants or semiconductor substrates. In one embodiment, the method includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseous p-xylylene monomers with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon--carbon double bonds. The copolymer films have low dielectric constants, improved thermal stability, and excellent adhesion to silicon oxide layers in comparison to parylene-N homopolymers.

Liquid Flow Rate Estimation And Verification By Direct Liquid Measurement

US Patent:
5866795, Feb 2, 1999
Filed:
Mar 17, 1997
Appl. No.:
8/819593
Inventors:
Fong Chang - Los Gatos CA
Thanh Pham - San Jose CA
Jeff Plante - Pleasanton CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01L 2500
US Classification:
73 136
Abstract:
An apparatus for controlling the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a purge gas supply, a carrier gas supply, a liquid flow meter, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A purge line is connected between the purge gas supply and the liquid flow meter and is used to trap a known mass of liquid precursor. To calibrate the flow of the liquid precursor, the purge gas is used to push the trapped liquid precursor through the liquid flow meter at a steady rate. The elapsed time for evacuating the trapped liquid precursor from the purge line is measured. Calibration information is computed using the mass of the trapped liquid precursor and the measured elapsed time based on the direct liquid measurement approach.

In-Situ Liquid Flow Rate Estimation And Verification By Sonic Flow Method

US Patent:
5968588, Oct 19, 1999
Filed:
Mar 17, 1997
Appl. No.:
8/819674
Inventors:
Visweswaren Sivaramakrishnan - Santa Clara CA
Fong Chang - Los Gatos CA
Thanh Pham - San Jose CA
Jeff Plante - Pleasanton CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
427 8
Abstract:
An apparatus for in-situ control of the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a carrier gas supply, a vaporizer, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A bypass line is connected to the chamber inlet line and includes a bypass valve, a sonic orifice, and a pressure gauge upstream of the sonic orifice. To calibrate the flow of the liquid precursor, a flow of carrier gas is directed into the bypass line at a carrier gas sonic flow rate. A first steady state pressure is measured with the pressure gauge. The liquid precursor is vaporized and directed to the flow of carrier gas into the bypass line.

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