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Us Patents
Solid-State Radiation Transducer Devices Having At Least Partially Transparent Buried-Contact Elements, And Associated Systems And Methods
US Patent:
2020017, Jun 4, 2020
Filed:
Feb 7, 2020
Appl. No.:
16/784879
Inventors:
- Boise ID, US
Vladimir Odnoblyudov - Danville CA, US
Lifang Xu - Boise ID, US
Vladimir Odnoblyudov - Danville CA, US
Lifang Xu - Boise ID, US
International Classification:
H01L 33/38
H01L 33/00
H01L 33/42
H01L 33/40
H01L 33/06
H01L 33/32
H01L 33/50
H01L 33/56
H01L 33/30
H01L 33/00
H01L 33/42
H01L 33/40
H01L 33/06
H01L 33/32
H01L 33/50
H01L 33/56
H01L 33/30
Abstract:
Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.
Solid-State Radiation Transducer Devices Having At Least Partially Transparent Buried-Contact Elements, And Associated Systems And Methods
US Patent:
2017025, Aug 31, 2017
Filed:
May 12, 2017
Appl. No.:
15/594392
Inventors:
- Boise ID, US
Vladimir Odnoblyudov - Danville CA, US
Lifang Xu - Boise ID, US
Vladimir Odnoblyudov - Danville CA, US
Lifang Xu - Boise ID, US
International Classification:
H01L 33/38
H01L 33/32
H01L 33/56
H01L 33/42
H01L 33/40
H01L 33/50
H01L 33/06
H01L 33/30
H01L 33/32
H01L 33/56
H01L 33/42
H01L 33/40
H01L 33/50
H01L 33/06
H01L 33/30
Abstract:
Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.
Solid-State Radiation Transducer Devices Having At Least Partially Transparent Buried-Contact Elements, And Associated Systems And Methods
US Patent:
2016034, Nov 24, 2016
Filed:
Aug 3, 2016
Appl. No.:
15/227198
Inventors:
- Boise ID, US
Vladimir Odnoblyudov - Danville CA, US
Lifang Xu - Boise ID, US
Vladimir Odnoblyudov - Danville CA, US
Lifang Xu - Boise ID, US
International Classification:
H01L 33/40
H01L 33/42
H01L 33/00
H01L 33/56
H01L 33/06
H01L 33/32
H01L 33/38
H01L 33/50
H01L 33/42
H01L 33/00
H01L 33/56
H01L 33/06
H01L 33/32
H01L 33/38
H01L 33/50
Abstract:
Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.
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