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Liping Ma6203 Verda Ln, San Diego, CA 92130

Liping Ma Phones & Addresses

6203 Verda Ln, San Diego, CA 92130    858-3569163   

13186 Kellam Ct, San Diego, CA 92130    858-3569163   

3250 Sawtelle Blvd, Los Angeles, CA 90066    310-3130168   

3290 Sawtelle Blvd, La, CA 90066    310-3130168    310-3132859   

Mentions for Liping Ma

Resumes

Resumes

Liping Ma Photo 1

Principal Scientist

Position:
Principal Scientist at NDT
Location:
Greater San Diego Area
Industry:
Research
Work:
NDT since Nov 2011
Principal Scientist
NDT Nov 2009 - Nov 2011
Chief Scientist
Interests:
Affiliations: Materials Research Society, and the International Society for Optical Engineering, American Physical Society. Journal reviewer: Advanced Materials, Advanced Functional Materials, J. American Chem. Society, Chemical Physics Letters, Applied Physics Letters, Organic electronics.
Honor & Awards:
Patents: 1.Vertical organic field effect transistor, WO2005024907 (Licensed by ORFID Corp.) 2.Organic bistability devices and organic memory cells. US 6,950,331, (by Silana Inc.) 3.Method of creating a high performance organic semiconductor device, US 6,784,017 B2. (Licensed by ORFID Corp.) 4.Rewritable Nano-surface Organic electrical bistable devices, WO2004070789 5.Three-terminal electrical bistable devices, WO2005086627 6 Novel capacitors and devices incorporating the capacitors UCLA 2005-305-1, 60/709.931. 7.Vertical Organic Light Emitting Transistor, UCLA 2007-069-1. WO/2008/027487. 8.Ambipolar vertical organic field-effect transistors, WO/2007/048041 Affiliations: Materials Research Society, and the International Society for Optical Engineering, American Physical Society. Journal reviewer: Advanced Materials, Advanced Functional Materials, J. American Chem. Society, Chemical Physics Letters, Applied Physics Letters, Organic electronics.

Publications

Us Patents

Organic Bistable Device And Organic Memory Cells

US Patent:
6950331, Sep 27, 2005
Filed:
May 24, 2001
Appl. No.:
10/399586
Inventors:
Yang Yang - Los Angeles CA,
Liping Ma - Los Angeles CA,
Jie Liu - Los Angeles CA,
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
G11C011/00
US Classification:
365148, 365100, 365151
Abstract:
A bistable electrical device () employing a bistable body () and a high conductivity material (). A sufficient amount of high conductivity material () is included in the bistable body () to impart bistable between a low resistance state and a high resistance state by application of an electrical voltage ().

Vertical Organic Field Effect Transistor

US Patent:
7476893, Jan 13, 2009
Filed:
Aug 24, 2004
Appl. No.:
10/569755
Inventors:
Yang Yang - Los Angeles CA,
Liping Ma - Los Angeles CA,
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 51/10
US Classification:
257 40, 257 60, 257329, 257E51006, 257E25008, 257E27117
Abstract:
A vertical organic field effect transistor that includes an active cell and a capacitor that share a common source electrode. The active cell includes a semiconductor layer that is sandwiched between a drain electrode and the common source electrode. The capacitor includes a dielectric layer that is sandwiched between a gate electrode and the common source electrode. The common source electrode allows control of electrical current between the source and drain electrodes by controlling the electrical potential that is applied to the gate electrode.

Rewritable Nano-Surface Organic Electrical Bistable Devices

US Patent:
7482621, Jan 27, 2009
Filed:
Feb 2, 2004
Appl. No.:
10/542843
Inventors:
Yang Yang - Los Angeles CA,
Liping Ma - Los Angeles CA,
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 29/08
H01L 35/24
H01L 51/00
US Classification:
257 40, 257 1, 257 2, 257 3, 257 4, 257 5, 257E47001, 257E47005, 257E27002, 257E29001, 257E29002, 257E29068, 257E29079, 257E2908
Abstract:
A bistable electrical device that is convertible between a low resistance state and a high resistance state. The device includes at least one layer of organic low conductivity material that is sandwiched between two electrodes. A buffer layer is located between the organic layer and at least one of the electrodes. The buffer layer includes particles in the form of flakes or dots of a low conducting material or insulating material that are present in a sufficient amount to only partially cover the electrode surface. The presence of the buffer layer controls metal migration into the organic layer when voltage pulses are applied between the electrodes to convert the device back and forth between the low and high resistance states.

Three-Terminal Electrical Bistable Devices

US Patent:
7544966, Jun 9, 2009
Filed:
Dec 1, 2004
Appl. No.:
10/581797
Inventors:
Yang Yang - Los Angeles CA,
Liping Ma - Los Angeles CA,
Jun He - Shanghai,
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 35/24
H01L 21/00
G09G 3/36
US Classification:
257 40, 257642, 257759, 257E39007, 257E45002, 257E5101, 438 82, 438725, 438780, 345 81, 345 97, 345204, 345206
Abstract:
A three terminal electrical bistable device that includes a tri-layer composed of an electrically conductive mixed layer sandwiched between two layers of low conductivity organic material that is interposed between a top electrode and a bottom electrode. The conducting mixed layer serves as the middle electrode. The device includes two memory cells composed of electrode/organic layer/mixed layer, where the interfaces between the electrically conductive mixed layer and the low conductivity organic layer exhibit bistable behavior.

Compounds For Use In Light-Emitting Devices

US Patent:
8426040, Apr 23, 2013
Filed:
Feb 23, 2011
Appl. No.:
13/033473
Inventors:
Shijun Zheng - San Diego CA,
Liping Ma - San Diego CA,
Amane Mochizuki - Carlsbad CA,
Assignee:
Nitto Denko Corporation - Osaka
International Classification:
H01L 51/54
C09K 11/06
US Classification:
428690, 428917, 313504
Abstract:
Compounds including optionally substituted Ring Systems 1-4 are described. These compounds may be used as hosts in light-emitting devices. A light-emitting device comprising a compound selected from optionally substituted Ring Systems 1-4 is also described. The Ring Systems 1-4 are:.

Compounds For Organic Light Emitting Diode Emissive Layers

US Patent:
8586205, Nov 19, 2013
Filed:
Sep 15, 2010
Appl. No.:
12/883018
Inventors:
Shijun Zheng - San Diego CA,
David T. Sisk - San Diego CA,
Brett T. Harding - Carlsbad CA,
Jensen Cayas - Bonita CA,
Sheng Li - Vista CA,
Amane Mochizuki - San Diego CA,
Hyunsik Chae - San Diego CA,
Sazzadur Rahman Khan - San Diego CA,
Liping Ma - San Diego CA,
Rebecca Bottger - Escondido CA,
Assignee:
Nitto Denko Corporation - Osaka
International Classification:
H01L 51/54
US Classification:
428690, 428917, 313504, 313505, 313506, 257 40, 257E5105, 257E51026, 257E51032, 548152, 548234, 5483044
Abstract:
Disclosed herein are compounds represented by a formula:.

Hybrid Composite Emissive Construct And Light-Emitting Devices Using The Same

US Patent:
8604689, Dec 10, 2013
Filed:
Nov 10, 2011
Appl. No.:
13/293537
Inventors:
Liping Ma - San Diego CA,
Shijun Zheng - San Diego CA,
Qianxi Lai - Vista CA,
Amane Mochizuki - San Diego CA,
Assignee:
Nitto Denko Corporation - Osaka
International Classification:
H01L 51/00
US Classification:
313504, 313512
Abstract:
Emissive constructs having three emissive layers, each having the same fluorescent host are described. At least one of the layers further includes a phosphorescent dopant. Light-emitting devices including these emissive constructs are also described.

Method Of Creating A Hight Performance Organic Semiconductor Device

US Patent:
2004003, Feb 19, 2004
Filed:
Aug 12, 2002
Appl. No.:
10/218141
Inventors:
Yang Yang - Los Angeles CA,
Liping Ma - Los Angeles CA,
Michael Beigel - Encinitas CA,
Assignee:
Precision Dynamics Corporation
International Classification:
H01L021/00
H01L021/84
US Classification:
438/099000, 438/151000
Abstract:
A high temperature thermal annealing process creates a low resistance contact between a metal material and an organic material of an organic semiconductor device, which improves the efficiency of carrier injection. The process forms ohmic contacts and Schottky contacts. Additionally, the process may cause metal ions or atoms to migrate or diffuse into the organic material, cause the organic material to crystallize, or both. The resulting organic semiconductor device has enhanced operating characteristics such as faster speeds of operation. Instead of using heat, the process may use other forms of energy, such as voltage, current, electromagnetic radiation energy for localized heating, infrared energy and ultraviolet energy. An example enhanced organic diode comprising aluminum, carbon C, and copper is described, as well as example insulated gate field effect transistors.

Isbn (Books And Publications)

Math

Author:
Liping Ma
ISBN #:
0618277196

Math

Author:
Liping Ma
ISBN #:
0618277226

Houghton Mifflin Math: Level 6

Author:
Liping Ma
ISBN #:
0618277234

Knowing And Teaching Elementary Mathematics: Teachers' Understanding Of Fundamental Mathematics In China And The United States

Author:
Liping Ma
ISBN #:
0805829083

Knowing And Teaching Elementary Mathematics: Teachers' Understanding Of Fundamental Mathematics In China And The United States

Author:
Liping Ma
ISBN #:
0805829091

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