Nyi Oo Myo, 506547 Timberview Dr, San Jose, CA 95120

D613321, Apr 6, 2010

Apr 22, 2009

29/335821

Kevin Bautista - San Jose CA, US
Nyi Oo Myo - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

1599

D15199

7976631, Jul 12, 2011

Oct 16, 2007

11/873132

Brian H. Burrows - San Jose CA, US
Alexander Tam - Union City CA, US
Ronald Stevens - San Ramon CA, US
Kenric T. Choi - Santa Clara CA, US
James D. Felsch - Santa Clara CA, US
Jacob Grayson - Santa Clara CA, US
Sumedh Acharya - Santa Clara CA, US
Sandeep Nijhawan - Los Altos CA, US
Lori D. Washington - Union City CA, US
Nyi O. Myo - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/00
C23C 16/455
H01L 21/306
H01L 21/3065

118715, 15634533, 15634534

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

8217574, Jul 10, 2012

Apr 2, 2010

12/753532

Balasubramanian Ramachandran - Santa Clara CA, US
Nyi Oo Myo - Campbell CA, US
Joseph M. Ranish - San Jose CA, US
Akio Takahashi - Ishinomaki, JP

Applied Materials, Inc. - Santa Clara CA

H01K 1/66
H01K 1/62

313580, 313579, 313315, 313316, 315119

Embodiments of a lamp having an internal fuse system are provided herein. In some embodiments, a lamp may include a transparent housing; a filament disposed in the housing, the filament having a main body disposed between a first end and a second end of the filament; a first conductor coupled to the filament at the first end of the filament; a first interceptor bar disposed in the housing and beneath the main body of the filament, wherein the first interceptor bar is coupled to the second end of the filament; a second conductor disposed proximate the first end of the filament and conductively coupled to the second end of the filament via the first interceptor bar, wherein the first interceptor bar is positioned such that an electrical short forms between the first and second conductors when the main body of the filament contacts the first interceptor bar.

8282992, Oct 9, 2012

Oct 26, 2007

11/925681

Nyi Oo Myo - Campbell CA, US
Kenric Cho - Santa Calra CA, US
Shreyas Kher - Campbell CA, US
Pravin Narwankar - Sunnyvale CA, US
Steve Poppe - Pleasanton CA, US
Craig R. Metzner - Fremont CA, US
Paul Deaten - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/00

4272481

Embodiments of the invention provide methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral, or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic.

8343279, Jan 1, 2013

May 12, 2005

11/127753

Nyi Oo Myo - Campbell CA, US
Kenric Choi - Santa Clara CA, US
Shreyas Kher - Campbell CA, US
Pravin Narwankar - Sunnyvale CA, US
Steve Poppe - Pleasanton CA, US
Craig R. Metzner - Fremont CA, US
Paul Deaten - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/00

118724, 118723 MW, 118729

Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic.

8388853, Mar 5, 2013

Feb 5, 2010

12/701047

Blake Koelmel - Mountain View CA, US
Nyi O. Myo - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C23F 1/00

216 58, 15634551, 15634552, 15634554, 15634555, 118728, 118729, 118730, 4272555

Embodiments of the present invention provide apparatus and methods for supporting, positioning or rotating a semiconductor substrate during processing. One embodiment of the present invention provides a method for processing a substrate comprising positioning the substrate on a substrate receiving surface of a susceptor, and rotating the susceptor and the substrate by delivering flow of fluid from one or more rotating ports.

8481118, Jul 9, 2013

Jul 12, 2011

13/181431

Brian H. Burrows - San Jose CA, US
Alexander Tam - Union City CA, US
Ronald Stevens - San Ramon CA, US
Kenric T. Choi - Santa Clara CA, US
James D. Felsch - Santa Clara CA, US
Jacob Grayson - Santa Clara CA, US
Sumedh Acharya - Santa Clara CA, US
Sandeep Nijhawan - Los Altos CA, US
Lori D. Washington - Union City CA, US
Nyi O. Myo - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/00
C23C 16/06
C23C 16/08
C23C 16/455

427250, 427252, 427253, 42725523, 42725528, 118715

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

2008001, Jan 24, 2008

Jul 24, 2006

11/491577

Nyi Oo Myo - Campbell CA, US
Steven Poppe - Pleasanton CA, US
Anthony White - Cupertino CA, US
Nety M. Krishna - Sunnyvale CA, US

H01L 21/677

414217

A method and apparatus for a modular processing system is described. The apparatus includes a transfer chamber as the foundation for the system and includes sidewalls adapted to receive at least three 200 mm and/or 300 mm process chambers. The transfer chamber includes a robot capable of withstanding high temperatures and is configured to transfer 200 mm and 300 mm substrates. The modularity of the transfer chamber is highly transportable and provides a research and development platform at a low cost of ownership and may be modularly built into a production system as additional chambers and peripheral hardware is added.