Rong Te Pan, 604699 Englewood Dr, San Jose, CA 95129

6387207, May 14, 2002

Apr 28, 2000

09/561325

Karthik Janakiraman - Santa Clara CA
Kelly Fong - San Francisco CA
Chen-An Chen - San Jose CA
Paul Le - San Jose CA
Rong Pan - San Francisco CA
Shankar Venkataraman - Santa Clara CA

Applied Materials, Inc. - Santa Clara CA

H01L 2100

156345, 118723 ME

A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.

7062141, Jun 13, 2006

Dec 12, 2002

10/319417

Rong Pan - San Jose CA, US
Van Q. Ton - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

G02B 6/10

385129, 385131, 65386

Undercladding and uppercladding layers that form part of an optical waveguide are deposited with a thermal CVD technique. The optical waveguide has a structure in which optical cores are formed over the undercladding layer and in which the uppercladding layer is formed over and between the optical cores. Generally, the optical cores have a refractive index greater than a refractive index of the cladding layers. A borophosphosilicate-glass layer may be used as one or both of the cladding layers. Thick cladding layers may be formed by cyclically depositing and annealing portions of the layer.

7324442, Jan 29, 2008

Feb 14, 2001

09/783701

Rong Pan - Menlo Park CA, US
Balaji Prabhakar - Palo Alto CA, US
Konstantinos Psounis - Athens, GR

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA

H04I 1/16
H04L 12/28

370230, 370412

In a packet-queue management system, a bandwidth allocation approach fairly addresses each of n flows that share the outgoing link of an otherwise congested router. According to an example embodiment of the invention, a buffer at the outgoing link is a simple FIFO, shared by packets belonging to the n flows. A packet priority-reduction (e. g. , packet dropping) process is used to discriminate against the flows that submit more packets/sec than is allowed by their fair share. This packet management process therefore attempts to approximate a fair queuing policy. The embodiment is advantageously easy to implement and can control unresponsive or misbehaving flows with a minimum overhead.

7413612, Aug 19, 2008

Jul 10, 2003

10/618187

Kirby Floyd - San Jose CA, US
Adrian Q. Montgomery - San Jose CA, US
Jennifer Gonzales - Riverside CA, US
Won Bang - Santa Clara CA, US
Rong Pan - San Jose CA, US
Amna Mohammed - Sunnyvale CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/00
C23F 1/00
H01L 21/306

118729, 15634554

Embodiments of the present invention are directed to adjusting the spacing between the substrate support and the faceplate of the gas distribution member to achieve improved uniformity of the layer formed on the substrate. One embodiment of the present invention is directed to a method of adjusting a spacing between a gas distribution member and a substrate support disposed generally opposite from the gas distribution member, wherein the substrate support is configured to support a substrate on which to form a layer with improved thickness uniformity. The method comprises forming a layer on the substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate. The method further comprises computing spacing adjustment amounts for the remaining locations relative to the reference location based on the differences in thickness between the reference location and the remaining locations. The spacing adjustment amount is positive to increase the spacing between the substrate support at the location and the gas distribution member if the thickness is greater at the location than at the reference location.

7642171, Jan 5, 2010

Nov 16, 2004

10/990002

Nitin K. Ingle - Santa Clara CA, US
Zheng Yuan - Fremont CA, US
Vikash Banthia - Mountain View CA, US
Xinyun Xia - Sunnyvale CA, US
Hali J. L. Forstner - Belmont CA, US
Rong Pan - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/76

438424, 438425, 438428, 438437, 257E21545

A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200 C. to about 800 C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800 C. to about 1400 C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400 C. to about 800 C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900 C. to about 1100 C. to further anneal the substrate in an atmosphere that lacks oxygen.

7754282, Jul 13, 2010

Jul 30, 2008

12/182345

Kirby Floyd - San Jose CA, US
Adrian Q. Montgomery - San Jose CA, US
Jennifer Gonzales - Riverside CA, US
Won Bang - Santa Clara CA, US
Rong Pan - San Jose CA, US
Amna Mohammed - Sunnyvale CA, US

Applied Materials, Inc. - Santa Clara CA

C23C 16/52

4272481, 427 9

A method of adjusting a spacing between a gas distribution member and a substrate support includes forming a layer on a substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate. The method further comprises computing spacing adjustment amounts for the remaining locations relative to the reference location based on the differences in thickness between the reference location and the remaining locations.

7817556, Oct 19, 2010

Apr 20, 2006

11/408293

Rong Pan - Sunnyvale CA, US
Flavio Bonomi - Palo Alto CA, US
George Varghese - Sunnyvale CA, US

Cisco Technology, Inc. - San Jose CA

G01R 31/08

3702351, 370229

Various improvements are provided for prior art policing methods, including token bucket methods and virtual time policing methods. Some preferred methods of the invention involve assigning a non-zero drop probability even when the packet would otherwise have been transmitted according to a prior art policing method. For example, a non-zero drop probability may be assigned even when there are sufficient tokens in a token bucket to allow transmission of the packet. A non-zero drop probability may be assigned, for example, when a token bucket level is at or below a predetermined threshold or according to a rate at which a token bucket is being emptied. Some implementations involve treating a token bucket as a virtual queue wherein the number of free elements in the virtual queue is proportional to the number of remaining tokens in the token bucket. Such implementations may involve predicting a future virtual queue size according to a previous virtual queue size and using this predicted value to calculate a drop probability.

7961621, Jun 14, 2011

Oct 11, 2005

11/248933

Davide Bergamasco - Sunnyvale CA, US
Andrea Baldini - San Francisco CA, US
Valentina Alaria - San Francisco CA, US
Flavio Bonomi - Palo Alto CA, US
Rong Pan - Sunnyvale CA, US

Cisco Technology, Inc. - San Jose CA

H04J 3/14

370236

The present invention provides improved methods and devices for managing network congestion. Preferred implementations of the invention allow congestion to be pushed from congestion points in the core of a network to reaction points, which may be edge devices, host devices or components thereof. Preferably, rate limiters shape individual flows of the reaction points that are causing congestion. Parameters of these rate limiters are preferably tuned based on feedback from congestion points, e. g. , in the form of backward congestion notification (“BCN”) messages. In some implementations, such BCN messages include congestion change information and at least one instantaneous measure of congestion. The instantaneous measure(s) of congestion may be relative to a threshold of a particular queue and/or relative to a threshold of a buffer that includes a plurality of queues.