Susan J Chen, 50Brooklyn, NY

6346745, Feb 12, 2002

Dec 4, 1998

09/205587

Takeshi Nogami - Sunnyvale CA
Susan H. Chen - Santa Clara CA

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 2348

257751, 257762, 257765

A combined interconnect system is formed comprising a Cu or Cu alloy feature electrically connected an Al or Al alloy feature through a composite comprising a first layer containing tantalum and aluminum contacting the Al or Al alloy feature, a second layer containing tantalum nitride, a third layer containing tantalum nitride having an nitrogen content less than that of the second layer, e. g. amorphous tantalum nitride, and a fourth layer comprising tantalum or tantalum nitride having a nitrogen content less than that of the third layer. Embodiments include forming a dual damascene opening in the dielectric layer exposing a lower Al or Al alloy feature, depositing a layer of tantalum in contact with the Al or Al alloy feature, sequentially depositing the second, third and fourth layers, filling the opening with Cu or Cu alloy layer, CMP and heating to diffuse aluminum from the underlying feature into the first tantalum layer.

6383947, May 7, 2002

Oct 31, 2000

09/703513

Paul R. Besser - Sunnyvale CA
Bhanwar Singh - Morgan Hill CA
Darrell M. Erb - Los Altos CA
Susan H. Chen - Santa Clara CA
Carmen Morales - S.J. CA

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 2131

438758, 438636, 438700, 43271, 43317, 257659, 257751

An anti-reflective coating for use in microcircuit fabrication and specifically using ultraviolet photolithographic processes. A three-layered anti-reflective coating is used to enhance metallization etching in the construction of microcircuits. The coating features a titanium nitride anti-reflective layer sandwiched between two titanium metal layers. The upper titanium layer protects subsequently applied deep ultraviolet photoresists from the deleterious effects of the titanium nitride anti-reflective layer. The unique character of the three layer anti-reflective coating allows the use of an efficient single chamber fabrication process to form the three-layer coating.

6461923, Oct 8, 2002

Aug 17, 2000

09/639816

Angela T. Hui - Fremont CA
Paul R. Besser - Austin TX
Susan H. Chen - Santa Clara CA

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 21336

438305, 438586, 438680

Sub-micron dimensioned, ultra-shallow junction MOS and/or CMOS transistor devices having reduced or minimal junction leakage are formed by a salicide process wherein silicon substrate surfaces intended to be subjected to ion implantation for source/drain formation are protected from damage resulting from reactive plasma etching of a blanket insulative layer for sidewall spacer formation by leaving a residual thickness of the insulative layer thereon. The residual layer is retained during ion implantation and removed prior to salicide processing to provide an undamaged surface for optimal contact formation thereon. Embodiments include anisotropically plasma etching a major amount of the thickness of the blanket insulative layer during a preselected interval for sidewall spacer formation and removing the residual thickness thereof after source/drain implantation by etching with dilute aqueous HF.

2002000, Jan 17, 2002

Mar 21, 2000

09/532272

Takeshi Nogami - Sunnyvale CA, US
Susan Chen - Santa Clara CA, US
Shekhar Pramanick - Fremont CA, US

H01L023/48

257/758000, 257/761000, 257/762000, 257/751000

A semiconductor device with high conductivity interconnection lines formed of high conductivity material, such as copper, is manufactured using tantalum nitride material as barrier material between an aluminum layer, such as the wire bonding layer, and the underlying high conductivity interconnection lines. The tantalum nitride material contains high nitrogen content.

6117769, Sep 12, 2000

Aug 11, 1998

9/132562

Takeshi Nogami - Sunnyvale CA
Susan Chen - Santa Clara CA
Shekhar Pramanick - Fremont CA

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 2144

438653

A semiconductor device with high conductivity interconnection lines formed of high conductivity material, such as copper, is manufactured using tantalum nitride material as barrier material between an aluminum layer, such as the wire bonding layer, and the underlying high conductivity interconnection lines. The tantalum nitride material contains high nitrogen content.

5726920, Mar 10, 1998

Sep 29, 1995

8/537116

Susan Hsuching Chen - Sunnyvale CA
Ying Shiau - San Jose CA

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 2166
H01L 21304

364579

In a final wafer sort (FWS) testing facility, the raw log-out data that is output by FWS test stations is augmented with additional differentiating data to thereby produce differentiable log-outs that can be sorted according to a variety of criteria including: product number or product family, time of test, specific wafer, specific production lot, intra-reticle site number, machine operator, and the specific swappable units of equipment that participated in the FWS testing. The differentiable log-outs are stored in a database and are periodically accessed by an automatic watchdog system that tests for exception conditions calling for immediate or long-term response. Corresponding alarm signals and trend reports are automatically generated and distributed to responsible personnel and/or reactive machine-systems as appropriate. The alarm distribution mechanism includes automatic paging of personnel by wireless beeper and/or e-mail. Immediate response alarms include exception conditions detected for accumulated bin counts on a per-wafer or per-lot basis.

6165855, Dec 26, 2000

Dec 4, 1998

9/205068

Paul R. Besser - Sunnyvale CA
Bhanwar Singh - Morgan Hill CA
Darrell M. Erb - Los Altos CA
Susan H. Chen - Santa Clara CA
Carmen Morales - S. J. CA

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 218238

438300

An anti-reflective coating for use in microcircuit fabrication and specifically using ultraviolet photolithographic processes. A three layered anti-reflective coating is used to enhance metallization etching in the construction of microcircuits. The coating features a titanium nitride anti-reflective layer sandwiched between two titanium metal layers. The upper titanium layer protects subsequently applied deep ultraviolet photoresists from the deleterious effects of the titanium nitride anti-reflective layer. The unique character of the three layer anti-reflective coating allows the use of an efficient single chamber fabrication process to form the three layer coating.

2018020, Jul 19, 2018

Jan 17, 2017

15/407419

- Troy MI, US
Susan Chen - Los Angeles CA, US

G01S 17/93
G01S 17/89
G01S 13/86

An object detection system includes a lidar-unit and a controller. The controller defines an occupancy-grid that segregates the field-of-view into columns, determine a first-occupancy-status of a column based on first-cloud-points detected by the lidar-unit in the column by a first-scan, determine a second-occupancy-status of the column based second-cloud-points detected in the column by a second-scan, determine a first-number of the first-cloud-points and a second-number of the second-cloud-points, and determine a dynamic-status of the column only if the column is classified as occupied by either the first-occupancy-status or the second-occupancy-status. The dynamic-status of the column is determined to be moving when a count-difference between the first-number and the second-number is greater than a difference-threshold, and the dynamic-status of the column is determined to be static when the count-difference is not greater than the difference-threshold and a registration-factor that aligns the first-cloud-points to the second-cloud-points is less than a registration-threshold.