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Vi Vu Vuong Deceased3938 Marlette Dr, San Jose, CA 95121

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3938 Marlette Dr, San Jose, CA 95121   

Hayward, CA   

Frankfort, KY   

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Us Patents

Integrated Circuit Profile Value Determination

US Patent:
6842261, Jan 11, 2005
Filed:
Aug 26, 2002
Appl. No.:
10/228692
Inventors:
Junwei Bao - Santa Clara CA, US
Wen Jin - Sunnyvale CA, US
Emmanuel Drege - San Jose CA, US
Srinivas Doddi - Fremont CA, US
Vi Vuong - Fremont CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01B 1102
G01N 2188
G06F 1900
H01L 2100
US Classification:
356636, 3562375, 438 7, 438 16, 702189, 700121
Abstract:
A profile parameter value is determined in integrated circuit metrology by: a) determining a diffraction signal difference based on a measured diffraction signal and a previously generated diffraction signal; b) determining a first profile parameter value based on the previously generated diffraction signal; c) determining a first profile parameter value change based on the diffraction signal difference; d) determining a second profile parameter value based on the first profile parameter value change; e) determining a second profile parameter value change between the first and second profile parameter values; f) determining if the second profile parameter value change meets one or more preset criteria; and g) when the second profile parameter value change fails to meet the one or more preset criteria, iterating c) to g) using as the diffraction signal difference in the iteration of step c), a diffraction signal difference determined based on the measured diffraction signal and a diffraction signal for the second profile parameter value previously determined in step d), and as the first profile parameter value in the iteration of step e), the second profile parameter value previously determined in step d).

Metrology Hardware Adaptation With Universal Library

US Patent:
6853942, Feb 8, 2005
Filed:
Aug 6, 2002
Appl. No.:
10/213485
Inventors:
Emmanuel Drege - San Jose CA, US
Junwei Bao - Santa Clara CA, US
Srinivas Doddi - Fremont CA, US
Vi Vuong - Fremont CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G06F019/00
G01B011/24
G01B009/02
G06K009/46
US Classification:
702119, 356369, 356499, 702189, 438 16, 382144
Abstract:
To generate sets of coefficients for use in optical metrology of semiconductor structures, at least three optical metrology signals for a set of parameters are obtained. The optical metrology signals are indicative of light diffracted from a semiconductor structure, and a value of at least one parameter of the set of parameters is varied to produce each signal. Functional relationships between the at least three optical metrology signals are obtained, the functional relationships including at least three coefficient values. At least three sets of coefficients from the at least three coefficient values of the functional relationships are determined.

Optimized Model And Parameter Selection For Optical Metrology

US Patent:
7092110, Aug 15, 2006
Filed:
Mar 25, 2003
Appl. No.:
10/397631
Inventors:
Raghu Balasubramanian - Santa Clara CA, US
Sanjay Yedur - San Ramon CA, US
Vi Vuong - Fremont CA, US
Nickhil Jakatdar - Los Altos CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01B 11/14
G01B 7/00
G01N 21/86
G01R 31/26
US Classification:
356625, 25055922, 702155, 438 16
Abstract:
A profile model for use in optical metrology of structures in a wafer is selected based on a template having one or more parameters including characteristics of process and modeling attributes associated with a structure in a wafer. The process includes performing a profile modeling process to generate a profile model of a wafer structure based on a template having one or more parameters including characteristics of process and modeling attributes. The profile model includes a set of geometric parameters associated with the dimensions of the structure. The generated profile model may further be tested against termination criteria and the one or more parameters modified. The process of performing a modeling process to generate a profile model and testing the generated profile model may be repeated until the termination criteria are met.

Parametric Optimization Of Optical Metrology Model

US Patent:
7126700, Oct 24, 2006
Filed:
Dec 12, 2003
Appl. No.:
10/735212
Inventors:
Junwei Bao - Fremont CA, US
Vi Vuong - Fremont CA, US
Manuel Madriaga - Santa Clara CA, US
Daniel Prager - Hopewell Junction NY, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01B 11/02
G01B 11/24
US Classification:
356625, 356601, 702155, 702189
Abstract:
The profile of an integrated circuit structure is determined by obtaining a measured metrology signal and a first simulated metrology signal, which has an associated profile model of the structure defined by a set of profile parameters. When the two signals match within a first termination criterion, at least one profile parameter is selected from the set of profile parameters. A value for the selected profile parameter is determined. A second simulated metrology signal having an associated profile model of the structure defined by a set of profile parameters with at least one profile parameter equal or close to the determined value for the selected profile parameter is obtained. When the measured and the second simulated metrology signals match within a second termination criterion, values for one or more remaining profile parameters are determined from the set of profile parameters associated with the second simulated metrology signal.

Optical Metrology Model Optimization Based On Goals

US Patent:
7171284, Jan 30, 2007
Filed:
Sep 21, 2004
Appl. No.:
10/946729
Inventors:
Vi Vuong - Fremont CA, US
Emmanuel Drege - San Jose CA, US
Shifang Ll - Pleasanton CA, US
Junwei Bao - Sunnyvale CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G06F 19/00
H01L 21/00
US Classification:
700121, 438 16, 702 85, 703 6
Abstract:
The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.

Selection Of Wavelengths For Integrated Circuit Optical Metrology

US Patent:
7216045, May 8, 2007
Filed:
Jun 3, 2002
Appl. No.:
10/162516
Inventors:
Srinivas Doddi - Fremont CA, US
Lawrence Lane - San Jose CA, US
Vi Vuong - Fremont CA, US
Mike Laughery - Austin TX, US
Junwei Bao - Fremont CA, US
Kelly Barry - Saratoga CA, US
Nickhil Jakatdar - Los Altos CA, US
Emmanuel Drege - San Jose CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01R 13/00
G01R 31/26
US Classification:
702 66, 702159, 702172, 438 16
Abstract:
Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

Measuring A Process Parameter Of A Semiconductor Fabrication Process Using Optical Metrology

US Patent:
7327475, Feb 5, 2008
Filed:
Dec 15, 2006
Appl. No.:
11/639515
Inventors:
Hanyou Chu - Palo Alto CA, US
Vi Vuong - Fremont CA, US
Yan Chen - Santa Clara CA, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G06F 19/00
H01L 21/66
US Classification:
356625, 356446, 356601, 702 57, 702189, 700121, 438 14
Abstract:
To measure a process parameter of a semiconductor fabrication process, the fabrication process is performed on a first area using a first value of the process parameter. The fabrication process is performed on a second area using a second value of the process parameter. A first measurement of the first area is obtained using an optical metrology tool. A second measurement of the second area is obtained using the optical metrology tool. One or more optical properties of the first area are determined based on the first measurement. One or more optical properties of the second area are determined based on the second measurement. The fabrication process is performed on a third area. A third measurement of the third area is obtained using the optical metrology tool. A third value of the process parameter is determined based on the third measurement and a relationship between the determined optical properties of the first and second areas.

Model And Parameter Selection For Optical Metrology

US Patent:
7330279, Feb 12, 2008
Filed:
Jul 25, 2002
Appl. No.:
10/206491
Inventors:
Vi Vuong - Fremont CA, US
Emmanuel Drege - San Jose CA, US
Junwei Bao - Fremont CA, US
Srinivas Doddi - Fremont CA, US
Xinhui Niu - Los Altos CA, US
Nickhil Jakatdar - Los Altos CA, US
Assignee:
Timbre Technologies, Inc. - Santa Clara CA
International Classification:
G01B 11/14
G01B 7/00
G01B 15/00
G01N 21/86
G01V 8/00
G06F 15/00
G01R 31/26
H01L 21/66
US Classification:
356625, 25055919, 25055922, 702155, 438 16
Abstract:
A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. A set of optimization parameters is selected for the profile model using one or more input diffraction signals and one or more parameter selection criteria. The selected profile model and the set of optimization parameters are tested against one or more termination criteria. The process of selecting a profile model, selecting a set of optimization parameters, and testing the selected profile model and set of optimization parameters is performed until the one or more termination criteria are met.

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