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Alaric H Tate, 65221 Riveredge Dr, Chatham Township, NJ 07928

Known as:
Al H Tate
Related to:
Deb Spencer 69 Ashley R Neal 31

Alaric Tate Phones & Addresses

221 Riveredge Dr, Chatham, NJ 07928    973-7010823   

Piscataway, NJ   

Tuscaloosa, AL   

Northport, AL   

Work

Position: Professional/Technical

Education

Degree: High school graduate or higher
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Mentions for Alaric H Tate

Publications & IP owners

Us Patents

Method Of Fabricating A Heterojunction Bipolar Transistor

US Patent:
6855613, Feb 15, 2005
Filed:
Nov 4, 1999
Appl. No.:
09/433204
Inventors:
Robert Alan Hamm - Staten Island NY, US
Rose Fasano Kopf - Green Brook NJ, US
Robert William Ryan - Piscataway NJ, US
Alaric Tate - Chatham NJ, US
Yu-Chi Wang - North Plainfield NJ, US
Assignee:
Lucent Technologies Inc. - Murray Hill NJ
Agere Systems Inc. - Allentown PA
International Classification:
H01L031/328
US Classification:
438312, 438338
Abstract:
A method of fabricating a III-V heterostructure semiconductor device. The method includes the steps of forming at least one conductive post overlying a semiconductor region to form a structure, encapsulating the structure and the conductive post to form a planarized cured passivation layer, and exposing the conductive post through the planarized cured passivation layer to form the semiconductor device.

Alignment Techniques For Photolithography Utilizing Multiple Photoresist Layers

US Patent:
6042975, Mar 28, 2000
Filed:
Jul 8, 1998
Appl. No.:
9/111534
Inventors:
Jinwook Burm - Seoul, KR
Robert Alan Hamm - Staten Island NY
Rose Fasano Kopf - Greenbrook NJ
Robert William Ryan - Piscataway NJ
Alaric Tate - Chatham NJ
Assignee:
Lucent Technologies Inc. - Murray Hill NJ
International Classification:
G03F 900
US Classification:
430 22
Abstract:
The specification describes a photolithography process using multiple exposures to form z-dimension patterns. Multiple exposures at different thickness levels are made using photomasks aligned with a latent image of alignment marks formed during the first exposure. The latent image is visible to the alignment system of commercial steppers.

Repairing Fractured Wafers In Semiconductor Manufacturing

US Patent:
5932379, Aug 3, 1999
Filed:
Feb 24, 1998
Appl. No.:
9/028966
Inventors:
Jinwook Burm - Seoul, KR
Robert Alan Hamm - Staten Island NY
Rose Fasano Kopf - Greenbrook NJ
Robert William Ryan - Piscataway NJ
Alaric Tate - Chatham NJ
Assignee:
Lucent Technologies Inc. - Murray Hill NJ
International Classification:
G03F 900
US Classification:
430 22
Abstract:
The specification describes a technique for repairing wafer fractures that occur during wafer fabrication. The fractured pieces are joined edge-to-edge at the fracture line and bonded with epoxy adhesive. The method succeeds because the dimensions of the fracture line after bonding is within the reregistration tolerance of commercial step-and-repeat cameras and the reregistration capability of the camera allows normal exposure of sites that do not intersect the fracture line.

Method For Making Inp Heterostructure Devices

US Patent:
6165859, Dec 26, 2000
Filed:
Feb 23, 1999
Appl. No.:
9/255845
Inventors:
Robert Alan Hamm - Staten Island NY
Rose Fasano Kopf - Green Brook NJ
Robert William Ryan - Piscataway NJ
Alaric Tate - Chatham NJ
Assignee:
Lucent Technologies Inc. - Murray HIll NJ
International Classification:
H01L 21331
US Classification:
438312
Abstract:
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd--Pt--Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.

Alignment Techniques For Epitaxial Growth Processes

US Patent:
6294018, Sep 25, 2001
Filed:
Sep 15, 1999
Appl. No.:
9/396035
Inventors:
Robert Alan Hamm - Staten Island NY
Rose Fasano Kopf - Green Brook NJ
Christopher James Pinzone - Basking Ridge NJ
Robert William Ryan - Piscataway NJ
Alaric Tate - Chatham NJ
Assignee:
Lucent Technologies - Murray Hill NJ
International Classification:
C30B 2504
US Classification:
117 90
Abstract:
The specification describes a lithographic technique in which alignment marks are defined in a first semiconductor layer and the alignment marks are then covered with a protective SiO. sub. 2 layer. After subsequent semiconductor layer growth steps, which selectively deposit on the former semiconductor layer but not on the protective layer, the alignment marks remain undistorted and visible to the exposure tool for subsequent processing.

Inp Heterostructure Devices

US Patent:
5907165, May 25, 1999
Filed:
May 1, 1998
Appl. No.:
9/071006
Inventors:
Robert Alan Hamm - Staten Island NY
Rose Fasano Kopf - Green Brook NJ
Robert William Ryan - Piscataway NJ
Alaric Tate - Chatham NJ
Assignee:
Lucent Technologies Inc. - Murray Hill NJ
International Classification:
H01L 310328
H01L 310336
H01L 31072
H01L 31109
US Classification:
257197
Abstract:
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd-Pt-Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.

Method Of Manufacturing Schottky Gate Transistor Utilizing Alignment Techniques With Multiple Photoresist Layers

US Patent:
6139995, Oct 31, 2000
Filed:
Mar 10, 2000
Appl. No.:
9/523210
Inventors:
Jinwook Burm - Seoul, KR
Robert Alan Hamm - Staten Island NY
Rose Fasano Kopf - Greenbrook NJ
Robert William Ryan - Piscataway NJ
Alaric Tate - Chatham NJ
Assignee:
Lucent Technologies Inc. - Murray Hill NJ
International Classification:
G03F 900
US Classification:
430 22
Abstract:
The specification describes a photolithography process using multiple exposures to form z-dimension patterns. Multiple exposures at different thickness levels are made using photomasks aligned with a latent image of alignment marks formed during the first exposure. The latent image is visible to the alignment system of commercial steppers.

Possible Relatives

Cynthia A Tate  David A Tate  Dachelle M Tate  Deanna C Tate  Daisy L Tate  Dale Tate  Debbie A Tate  Alaric A Joseph  Alaric D Toler  Alaric B Smith 

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