Alexander T Chu, 40967 Belmont Ter UNIT 4, Sunnyvale, CA 94086

2011011, May 19, 2011

Nov 13, 2009

12/617860

Fanglin Zhang - Fremont CA, US
Jong Park - Campbell CA, US
Man Mui - Santa Clara CA, US
Alexander Chu - San Francisco CA, US
Seungpil Lee - San Ramon CA, US

G11C 16/06

36518521

In a non-volatile memory system, a voltage generator provides a voltage to a gate of a voltage-setting transistor which is used in a sense circuit to set an initial voltage at a sense node. At the end of a sense period, a final voltage of the sense node is compared to a trip point, which is the threshold voltage of a voltage-sensing transistor. To account for temperature variations and manufacturing process variations, the voltage generator includes a transistor which is matched to the voltage-setting transistor, and a transistor which is matched to the voltage-sensing transistor. As a result, a voltage swing between the initial voltage and the trip point is constant, even as the initial voltage and trip point vary. In a particular implementation, the voltage generator uses a cascode current mirror circuit, and receives a reference current from a band gap voltage circuit.

2014000, Jan 2, 2014

Nov 13, 2012

13/675781

Jongmin Park - Cupertino CA, US
Hao Thai Nguyen - San Jose CA, US
Juan Carlos Lee - Sunnyvale CA, US
Seungpil Lee - San Ramon CA, US
Alexander Tsang-nam Chu - San Francisco CA, US

SanDisk Technologies Inc. - Plano TX

G11C 16/26

36518521

A compact and versatile high speed sense amplifier suitable for use in non-volatile memory circuits is presented. The sense amp includes a latch, which is connected to a data bus, and bit line selection circuitry by which it can selectively be connected to one or more bit lines. The sense amp also includes some intermediate circuitry having a first node connectable to a selected bit line through the bit line selection circuitry and a second node that is connectable to the latch circuit. The sense amp can include switches where the second node can be connected to either the value held in the latch or the inverse of the value held in the latch. The sense amp can also include a switch where an internal node of the sense amp can be connected directly to a voltage supply level.

2021035, Nov 18, 2021

May 11, 2021

17/317568

- Santa Clara CA, US
Scott C. Mosher - San Francisco CA, US
Gabriel R. Gonzales - Milpitas CA, US
Dylan Thomas Van Hoven - San Carlos CA, US
Alexander Chu - Diamond Bar CA, US
Erik Ross Jagger - Redwood City CA, US

A61F 2/24

A fastening system and a deployment system for controlling translation and rotation of a deployment device are presented. A fastening system may comprise one or more components configured for arresting or restricting translation of a delivery catheter of a medical device, including a mitral valve fixation device such as the MitraClip. A deployment system may comprise one or more components configured for locking rotation of a crimping cam to a slider to control deployment of a mitral valve fixation device.

2021034, Nov 11, 2021

May 3, 2021

17/306407

- Santa Clara CA, US
Gabriel R. Gonzales - Milpitas CA, US
Alexander Chu - Diamond Bar CA, US
Richard Thomas Childs - San Francisco CA, US

A61B 17/128
A61B 17/3205
A61M 25/01
A61B 18/14

A system configured to detach an interventional implant from a cardiac valve includes a guide catheter and a capture mechanism routable through the guide catheter. The capture mechanism comprises a capture hypotube with a container portion/space configured to receive an interventional implant connected to cardiac valve tissue. The capture mechanism also includes a cutting arm axially moveable relative to the capture hypotube. The capture hypotube and the cutting arm each include cutting elements that are brought together upon actuation of the cutting arm to thereby cut the cardiac valve tissue surrounding the interventional implant to free the implant from the cardiac valve.

2021013, May 13, 2021

Nov 6, 2020

17/091881

- Santa Clara CA, US
Gabriel Gonzales - Milpitas CA, US
Dylan Van Hoven - San Carlos CA, US
Alexander Chu - Diamond Bar CA, US
Erik Jagger - Redwood City CA, US
Scott Mosher - San Francisco CA, US

EVALVE, INC. - Santa Clara CA

A61F 2/24
A61B 17/00

Medical device delivery system including a catheter, handle, lock line handle, and lock line. The catheter includes a proximal end portion and a distal end portion. The handle is coupled to the proximal end portion of the catheter. The lock line handle is releasably coupled to the handle and actuatable between a lock position and an unlock position. The lock line includes a first end portion fixedly coupled to the lock line handle, a second end portion releasably coupled to the lock line handle, and an intermediate portion configured to be releasably coupled to the medical implant disposed proximate the distal end portion of the catheter. Actuating the lock line handle from the lock position toward the unlock position increases tension on the lock line, and actuating the lock line handle from the unlock position toward the lock position decreases tension on the lock line.

2021012, May 6, 2021

Nov 5, 2020

17/090167

- Santa Clara CA, US
Alexander C. Chu - Diamond Bar CA, US
Richard Childs - San Francisco CA, US
Dylan Van Hoven - San Carlos CA, US
Gabriel Gonzales - Milpitas CA, US

EVALVE, INC. - Santa Clara CA

A61F 2/24

Stabilizer for a medical delivery system is provided, wherein the medical delivery system has at least two portions translatable relative each other. The stabilizer includes a base and a sled coupled to the base. The sled includes a distal arm including a distal attachment for receiving a first portion of the medical delivery system, and a proximal arm including a proximal attachment for receiving a second portion of the medical delivery system. The sled is translatable relative to the base and the proximal attachment is translatable relative to the proximal arm.

2018019, Jul 12, 2018

Jun 16, 2017

15/625848

- Plano TX, US
Alexander Chu - San Francisco CA, US
Kenneth Louie - Sunnyvale CA, US
Anirudh Amarnath - San Jose CA, US
Jixin Yu - Yokkaichi, JP
Yen-Lung Jason Li - San Jose CA, US
Tai-Yuan Tseng - Milpitas CA, US
Jong Yuh - Pleasanton CA, US

SanDisk Technologies LLC - Plano TX

G11C 8/08
G11C 5/06
H01L 27/112
G11C 8/10
G06F 13/40

Apparatuses, systems, and methods are disclosed for three-dimensional non-volatile memory. A stack of word line layers includes word lines for a three-dimensional non-volatile memory array. A stack of word line layers may include a plurality of tiers. Word line switch transistors transfer word line bias voltages to the word lines. Word line contact regions couple word line switch transistors to word lines. A word line contact region includes a stepped structure for a tier of word line layers. A level region separates a word line contact region for a first tier from a word line contact region for a second tier.

2017035, Dec 14, 2017

Jun 8, 2016

15/176674

- Plano TX, US
Zhenyu LU - Milpitas CA, US
Alexander CHU - Milpitas CA, US
Kensuke YAMAGUCHI - Yokkaichi, JP
Hiroyuki OGAWA - Yokkaichi, JP
Daxin MAO - Cupertino CA, US
Yan LI - Milpitas CA, US
Johann ALSMEIER - San Jose CA, US

H01L 27/11582
H01L 27/11573
H01L 23/522
H01L 23/528

A semiconductor structure includes a memory-level assembly located over a substrate and including at least one alternating stack and memory stack structures vertically extending through the at least one alternating stack. Each of the at least one an alternating stack includes alternating layers of respective insulating layers and respective electrically conductive layers, and each of the electrically conductive layers in the at least one alternating stack includes a respective opening such that a periphery of a respective spacer dielectric portion located in the opening contacts a sidewall of the respective electrically conductive layers. At least one through-memory-level via structure vertically extends through each of the spacer dielectric portions and the insulating layers.