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Alfred S Wong, 437458 De La Farge Dr, Cupertino, CA 95014

Alfred Wong Phones & Addresses

7458 De La Farge Dr, Cupertino, CA 95014    408-8935089   

San Francisco, CA   

San Diego, CA   

Cherryvale, KS   

Davis, CA   

Mentions for Alfred S Wong

Career records & work history

Lawyers & Attorneys

Alfred Wong Photo 1

Alfred Wong - Lawyer

ISLN:
1000554498
Admitted:
1989
Alfred Wong Photo 2

Alfred Wong - Lawyer

Office:
Takushi, Wong, Lee & Yee A Law Corporation
Specialties:
Real Estate, Financing, General Practice
ISLN:
902646610
Admitted:
1964
University:
University of Hawaii and Marquette University, B.S., 1953
Law School:
University of California, Hastings College of Law, J.D., 1964

Publications & IP owners

Us Patents

Contact Printing Using A Magnified Mask Image

US Patent:
6961186, Nov 1, 2005
Filed:
Sep 26, 2003
Appl. No.:
10/672620
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred Kwok-Kit Wong - Brookline MA, US
Assignee:
Takumi Technology Corp. - Sunnyvale CA
International Classification:
G02B009/00
US Classification:
359649, 359754
Abstract:
Improvements in the fabrication of integrated circuits are driven by the decrease of the size of the features printed on the wafers. Current lithography techniques limits have been extended through the use of phase-shifting masks, off-axis illumination, and proximity effect correction. More recently, liquid immersion lithography has been proposed as a way to extend even further the limits of optical lithography. This invention described a methodology based on contact printing using a projection lens to define the image of the mask onto the wafer. As the imaging is performed in a solid material, larger refractive indices can be obtained and the resolution of the imaging system can be increased.

Mask Data Preparation

US Patent:
7055127, May 30, 2006
Filed:
Oct 27, 2003
Appl. No.:
10/694474
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred K. Wong - Brookline MA, US
Assignee:
Takumi Technology Corp. - Sunnyvale CA
International Classification:
G06F 17/50
US Classification:
716 19, 716 21
Abstract:
The manufacturing of integrated circuits relies on the use of optical proximity correction (OPC) to correct the printing of the features on the wafer. The data is subsequently fractured to accommodate the format of existing mask writer. The complexity of the correction after OPC can create some issues for vector-scan e-beam mask writing tools as very small slivers are created when the data is converted to the mask write tool format. Moreover the number of shapes created after fracturing is quite large and are not related to some important characteristics of the layout like for example critical areas. A new technique is proposed where the order of the OPC and fracturing steps is reversed. The fracturing step is done first in order to guarantee that no slivers are created and that the number of shapes is minimized. The shapes created can also follow the edges of critical zones so that critical and non-critical edges can be differentiated during the subsequent OPC step.

Design-Manufacturing Interface Via A Unified Model

US Patent:
7155689, Dec 26, 2006
Filed:
Oct 7, 2003
Appl. No.:
10/680592
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred K. Wong - Brookline MA, US
Assignee:
Magma Design Automation, Inc. - Santa Clara CA
International Classification:
G06F 17/50
US Classification:
716 4, 716 5, 716 19
Abstract:
Subtleties of advanced fabrication processes and nano-scale phenomena associated with integrated circuit miniaturization have exposed the insufficiencies of design rules. Such inadequacies have adverse impact on all parts of the integrated circuit creation flow where design rules are used. In addition, segregation of the various layout data modification steps required for deep sub-micrometer manufacturing are resulting in slack and inefficiencies. This invention describes methods to improve integrated circuit creation via the use of a unified model of fabrication processes and circuit elements that can complement or replace design rules. By capturing the interdependence among fabrication processes and circuit elements, the unified model enables efficient layout generation, resulting in better integrated circuits.

Mask Data Preparation

US Patent:
7614033, Nov 3, 2009
Filed:
May 26, 2006
Appl. No.:
11/442110
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred Kwok-Kit Wong - Brookline MA, US
Assignee:
Takumi Technology Corp. - Santa Clara CA
International Classification:
G06F 17/50
US Classification:
716 21, 716 7, 716 11, 716 19
Abstract:
The manufacturing of integrated circuits relies on the use of optical proximity correction (OPC) to correct the printing of the features on the wafer. The data is subsequently fractured to accommodate the format of existing mask writer. The complexity of the correction after OPC can create some issues for vector-scan e-beam mask writing tools as very small slivers are created when the data is converted to the mask write tool format. Moreover the number of shapes created after fracturing is quite large and are not related to some important characteristics of the layout like for example critical areas. A new technique is proposed where the order of the OPC and fracturing steps is reversed. The fracturing step is done first in order to guarantee that no slivers are created and that the number of shapes is minimized. The shapes created can also follow the edges of critical zones so that critical and non-critical edges can be differentiated during the subsequent OPC step.

Contact Or Proximity Printing Using A Magnified Mask Image

US Patent:
7932020, Apr 26, 2011
Filed:
Jul 10, 2003
Appl. No.:
10/616603
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred K. Wong - Brookline MA, US
Assignee:
Takumi Technology Corporation - Santa Clara CA
International Classification:
G21K 5/10
US Classification:
430396, 430311, 2504922, 25049222
Abstract:
Improvements in the fabrication of integrated circuits are driven by the decrease of the size of the features printed on the wafers. Current lithography techniques limits have been extended through the use of phase-shifting masks, off-axis illumination, and proximity effect correction. More recently, liquid immersion lithography has been proposed as a way to extend even further the limits of optical lithography. This invention described a methodology based on contact or proximity printing using a projection lens to define the image of the mask onto the wafer. As the imaging is performed in a solid material, larger refractive indices can be obtained and the resolution of the imaging system can be increased.

Lithography Aware Timing Analysis

US Patent:
8473876, Jun 25, 2013
Filed:
Jul 20, 2007
Appl. No.:
11/781054
Inventors:
Emre Tuncer - Santa Cruz CA, US
Hui Zheng - Round Rock TX, US
Vivek Raghavan - Mountain View CA, US
Anirudh Devgan - Austin TX, US
Amir Ajami - Sunnyvale CA, US
Alessandra Nardi - Hayward CA, US
Tao Lin - Sunnyvale CA, US
Pramod Thazhathethil - Bangalore, IN
Alfred Wong - Brookline MA, US
Assignee:
Synopsys, Inc. - Mountain View CA
International Classification:
G06F 17/50
US Classification:
716 54, 716 51, 716 55, 716113
Abstract:
A method for performing timing analysis includes receiving information specifying an integrated circuit. A neighborhood of shapes associated with the integrated circuit is then determined. Delay information associated with the integrated circuit is generated based on the neighborhood of shapes. The neighborhood of shapes may be determined by determining a first set of spacings to a boundary of a first cell from an internal shape. A second set of spacings may be determined from the boundary of the first cell to a shape of a second cell. A lithography process may be characterized using the first and second set of spacings.

Lithography Aware Leakage Analysis

US Patent:
8572523, Oct 29, 2013
Filed:
Jul 20, 2007
Appl. No.:
11/781043
Inventors:
Emre Tuncer - Santa Cruz CA, US
Hui Zheng - Round Rock TX, US
Vivek Raghavan - Mountain View CA, US
Anirudh Devgan - Austin TX, US
Amir Ajami - Sunnyvale CA, US
Alessandra Nardi - Hayward CA, US
Tao Lin - Sunnyvale CA, US
Pramod Thazhathethil - Bangalore, IN
Alfred Wong - Brookline MA, US
Assignee:
Synopsys, Inc. - Mountain View CA
International Classification:
G06F 17/50
US Classification:
716 55, 716 52, 716 53, 716 54, 716112, 716113, 716133, 716134, 716136, 703 16
Abstract:
A method for performing leakage analysis includes receiving information specifying an integrated circuit. A neighborhood of shapes associated with the integrated circuit is then determined. Leakage information associated with the integrated circuit is generated based on the neighborhood of shapes. The neighborhood of shapes may be determined by determining a first set of spacings to a boundary of a first cell from an internal shape. A second set of spacings may be determined from the boundary of the first cell to a shape of a second cell. A lithography process may be characterized using the first and second set of spacings.

Contact Or Proximity Printing Using A Magnified Mask Image

US Patent:
2011020, Aug 25, 2011
Filed:
Apr 25, 2011
Appl. No.:
13/066816
Inventors:
Christophe Pierrat - Santa Clara CA, US
Alfred Kwok-Kit Wong - Brookline MA, US
International Classification:
G03F 7/20
G03B 27/54
US Classification:
430319, 355 67
Abstract:
Improvements in the fabrication of integrated circuits are driven by the decrease of the size of the features printed on the wafers. Current lithography techniques limits have been extended through the use of phase-shifting masks, off-axis illumination, and proximity effect correction. More recently, liquid immersion lithography has been proposed as a way to extend even further the limits of optical lithography. This invention described a methodology based on contact or proximity printing using a projection lens to define the image of the mask onto the wafer. As the imaging is performed in a solid material, larger refractive indices can be obtained and the resolution of the imaging system can be increased.

Amazon

Alfred Wong Photo 51

Optical Imaging In Projection Microlithography (Spie Tutorial Texts In Optical Engineering Vol. Tt66)

Author:
Alfred Kwok-Kit Wong
Publisher:
SPIE Publications
Binding:
Paperback
Pages:
276
ISBN #:
047103570X
EAN Code:
9780819458292
Here for the first time is an integrated mathematical view of the physics and numerical modeling of optical projection lithography that efficiently covers the full spectrum of the important concepts. Alfred Wong offers rigorous underpinning, clarity in systematic formulation, physical insight into e...
Alfred Wong Photo 52

Alfred Wong Partnership: Innovation And Knowledge (Talenti)

Author:
Paolo Righetti
Publisher:
l'Arca Edizioni
Binding:
Paperback
Pages:
100
ISBN #:
887838061X
EAN Code:
9788878380615
In the brief period of forty years, Alfred Wong's Partnership's contribution to the cityscape of Singapore has been significant and diverse, producing comprehensive architecture on the cutting edge of design innovation and technology.
Alfred Wong Photo 53

Cost And Performance In Integrated Circuit Creation (Proceedings Of Spie) By Wong, Alfred Kwok-Kit (2003) Paperback

Author:
Alfred Kwok-Kit Wong
Publisher:
Society of Photo Optical
Binding:
Paperback
Alfred Wong Photo 54

Maintenance Of The Hipas Ionospheric Radio Frequency Heater At Two Rivers, Alaska

Author:
Alfred Y. Wong
Publisher:
PN
Binding:
Paperback
Alfred Wong Photo 55

Design For Manufacturability Through Design-Process Integration (Proceedings Of Spie)

Author:
Alfred K. Wong, Vivek K. Singh
Publisher:
Society of Photo Optical
Binding:
Paperback
Pages:
588
ISBN #:
0819466409
EAN Code:
9780819466402

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