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Anand P Gupta, 83Catawba Heights, NC

Known as:
Anand Dr Gupta Anand Prakash Gupta Anjana J Gupta Pushp Gupta Pushpa Gupta
Related to:
Ashish Gupta 49

Anand Gupta Phones & Addresses

Belmont, NC   

Sunnyvale, CA   

San Jose, CA   

Santa Clara, CA   

Foster City, CA   

Cupertino, CA   

Gaston, NC   

Education

School / High School: U.P. Board- Allahabad, Uttar Pradesh Oct 2009 Specialities: INDUSTRIAL TRAINING
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Mentions for Anand P Gupta

Career records & work history

Medicine Doctors

Anand S. Gupta

Specialties:
General Surgery, Gastroenterology
Work:
University Clinic
2535 University Blvd W, Jacksonville, FL 32217
904-3678686 (phone) 904-3670211 (fax)
Education:
Medical School
P T B D S Postgrad Inst of Med Sci, M Dayanand Univ, Rohtak, Haryana, India
Graduated: 1970
Procedures:
Appendectomy, Arthrocentesis, Bariatric Surgery, Colonoscopy, Endoscopic Retrograde Cholangiopancreatography (ERCP), Esophageal Dilatation, Gallbladder Removal, Hallux Valgus Repair, Hemorrhoid Procedures, Laparoscopic Gallbladder Removal, Pilonidal Cyst Excision, Proctosigmoidoscopy, Sigmoidoscopy, Small Bowel Resection, Spleen Surgey, Thoracoscopy, Thyroid Biopsy, Upper Gastrointestinal Endoscopy, Hernia Repair, Mastectomy, Thyroid Gland Removal
Conditions:
Benign Polyps of the Colon, Cholelethiasis or Cholecystitis, Cirrhosis, Diverticulitis, Diverticulosis, Esophagitis, Gastritis and Duodenitis, Gastroesophageal Reflux Disease (GERD), Gastrointestinal Hemorrhage, Inflammatory Bowel Disease (IBD), Inguinal Hernia, Malignant Neoplasm of Colon, Skin and Subcutaneous Infections
Languages:
English, Russian, Spanish, Tagalog
Description:
Dr. Gupta graduated from the P T B D S Postgrad Inst of Med Sci, M Dayanand Univ, Rohtak, Haryana, India in 1970. He works in Jacksonville, FL and specializes in General Surgery and Gastroenterology. Dr. Gupta is affiliated with Baptist Medical Center, Memorial Hospital Jacksonville, St Vincents Medical Center and St Vincents Medical Center Southside.

Anand M. Gupta

Specialties:
Gastroenterology, Hepatology
Work:
Kentuckiana Gastroenterology
1003 N Dupont Sq STE 9A, Louisville, KY 40207
502-8937744 (phone) 502-8937741 (fax)
Education:
Medical School
Maulana Azad Med Coll, Delhi Univ, New Delhi, Delhi, India
Graduated: 1984
Procedures:
Hemorrhoid Procedures, Upper Gastrointestinal Endoscopy, Colonoscopy, Endoscopic Retrograde Cholangiopancreatography (ERCP), Esophageal Dilatation, Sigmoidoscopy
Conditions:
Benign Polyps of the Colon, Diverticulitis, Diverticulosis, Esophagitis, Gastritis and Duodenitis, Hemorrhoids, Malignant Neoplasm of Colon, Peptic Ulcer Disease, Abdominal Hernia, Acute Myocardial Infarction (AMI), Acute Pancreatitis, Anal Fissure, Anal or Rectal Abscess, Anemia, Candidiasis, Celiac Disease, Cholelethiasis or Cholecystitis, Chronic Pancreatitis, Cirrhosis, Constipation, Dehydration, Disorders of Lipoid Metabolism, Gastric Cancer, Gastroesophageal Reflux Disease (GERD), Gastrointestinal Hemorrhage, Hypertension (HTN), Infectious Liver Disease, Inflammatory Bowel Disease (IBD), Intestinal Obstruction, Iron Deficiency Anemia, Irritable Bowel Syndrome (IBS), Ischemic Bowel Disease, Liver Cancer, Malignant Neoplasm of Esophagus, Migraine Headache, Rectal, Abdomen, Small Intestines, or Colon Cancer, Skin and Subcutaneous Infections, Substance Abuse and/or Dependency
Languages:
English
Description:
Dr. Gupta graduated from the Maulana Azad Med Coll, Delhi Univ, New Delhi, Delhi, India in 1984. He works in Louisville, KY and specializes in Gastroenterology and Hepatology. Dr. Gupta is affiliated with Baptist Health Louisville, Clark Regional Medical Center, Jewish Hospital and Norton Womens & Kosair Childrens Hospital.
Anand Gupta Photo 1

Anand Gupta

Specialties:
Surgery
Education:
Government Medical College, Patiala (1970)

Anand Gupta resumes & CV records

Resumes

Anand Gupta Photo 47

Anand Gupta - Deoria, US

Education:
U.P. Board - Allahabad, Uttar Pradesh Oct 2009 to May 2011
INDUSTRIAL TRAINING Uttar Pradesh Technical University Lucknow - Lucknow, Uttar Pradesh 2009
B. Pharm. in Pharmacy Affiliated U.P. Board - Allahabad, Uttar Pradesh 2002
year

Publications & IP owners

Us Patents

Apparatus For Improving Film Stability Of Halogen-Doped Silicon Oxide Films

US Patent:
6374770, Apr 23, 2002
Filed:
Jun 20, 2000
Appl. No.:
09/597856
Inventors:
Peter W. Lee - Fremont CA
Stuardo Robles - Sunnyvale CA
Anand Gupta - San Jose CA
Virendra V. S. Rana - Los Gatos CA
Amrita Verma - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118723E, 118697, 118695, 156345, 438513
Abstract:
A chemical vapor deposition system that includes a housing configured to form a processing chamber, a substrate holder configured to hold a substrate within the processing chamber, a gas distribution system configured to introduce gases into the processing chamber, a plasma generation system configured to form a plasma within the processing chamber, a processor operatively coupled to control the gas distribution system and the plasma generation system, and a computer-readable memory coupled to the processor that stores a computer-readable program which directs the operation of the chemical vapor deposition system. In one embodiment the computer-readable program comprises instructions that control the gas distribution system to flow a process gas comprising silicon, oxygen and a halogen family member into the chamber to deposit a halogen-doped silicon oxide film on a substrate positioned on the substrate holder and instructions that control the gas distribution system and plasma generation system to densify the halogen-doped silicon oxide film by bombarding the film with ionic species from a plasma of an argon-containing gas source. In another embodiment, the computer-readable program comprises instructions that control the gas distribution system to flow a process gas comprising silicon, oxygen and a halogen family member into the chamber to deposit a halogen-doped silicon oxide film on said substrate and instructions that control the gas distribution system and plasma generation system to form a plasma from a hydrogen containing source gas to bombard the halogen-doped silicon oxide film with hydrogen ions to remove loosely bound halogen atoms from the film.

Decontamination Of A Plasma Reactor Using A Plasma After A Chamber Clean

US Patent:
6449521, Sep 10, 2002
Filed:
Sep 18, 1998
Appl. No.:
09/156698
Inventors:
Anand Gupta - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G06F 1900
US Classification:
700121, 700117, 700119, 700203, 700204, 427569, 427578, 427585, 427535, 438789, 438788, 438792, 438695, 118715, 118725, 118723 R, 29 2501, 29 2502, 29 2503, 134 11, 134 12, 134 13, 156389, 156367
Abstract:
A method and apparatus for reducing fluorine and other sorbable contaminants in plasma reactor used in chemical vapor deposition process such as the deposition of silicon oxide layer by the reaction of TEOS and oxygen. According to the method of the present invention, plasma of an inert gas is maintained in plasma reactor following chamber clean to remove sorbable contaminants such as fluorine. The plasma clean is typically followed by seasoning of the reactor to block or retard remaining contaminants. According to one embodiment of the invention, the combination of chamber clean, plasma clean, and season film is conducted before PECVD oxide layer is deposited on wafer positioned in the plasma reactor.

Method And Apparatus For Reducing Particle Contamination In A Substrate Processing Chamber

US Patent:
6465043, Oct 15, 2002
Filed:
Feb 9, 1996
Appl. No.:
08/599230
Inventors:
Anand Gupta - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
42725537, 427579, 42725528, 42725529, 4272555, 427569, 438787, 438788, 438789
Abstract:
A method and apparatus for reducing particle contamination in a substrate processing chamber during deposition of a film having at least two layers. The method of the present invention includes the steps of introducing a first process gas into a chamber to deposit a first layer of the film over a wafer at a first selected pressure, introducing a second process gas into the chamber to deposit a second layer of the film over the wafer, and between deposition of said first and second layers, maintaining pressure within the chamber at a pressure that is sufficiently high that particles dislodged by introduction of the second process do not impact the wafer.

Plasma Fluorine Resistant Alumina Ceramic Material And Method Of Making

US Patent:
6638886, Oct 28, 2003
Filed:
Nov 23, 1998
Appl. No.:
09/200421
Inventors:
Anand Gupta - San Jose CA
Tirunelveli S. Ravi - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C04B 3510
US Classification:
501127
Abstract:
A plasma fluorine resistant polycrystalline alumina ceramic material is produced by forming a green body including alumina and a binder, and sintering the green body for a time from about 8 to 12 hours. The area % of unsintered particles in the polycrystalline alumina ceramic material does not exceed 0. 1 area %, resulting in reduced emission of particles from the material after exposure to plasma fluorine.

Optical Method And Apparatus For Inspecting Large Area Planar Objects

US Patent:
6809809, Oct 26, 2004
Filed:
Mar 4, 2003
Appl. No.:
10/379016
Inventors:
Patrick D. Kinney - Hayward CA
Anand Gupta - Phoenix AZ
Nagaraja P. Rao - San Carlos CA
Assignee:
Real Time Metrology, Inc. - Castro Valley CA
International Classification:
G01N 2100
US Classification:
3562375, 3562371, 3562374
Abstract:
An optical inspection module is provided for detecting defects on a substrate having first and second opposite planar surfaces. The module includes a substrate holding position and first and second measurement instruments. The first instrument includes a first illumination path extending to the substrate holding position and having a grazing angle of incidence with the first surface, which illuminates substantially the entire first surface. A first optical element is oriented to collect non-specularly reflected light scattered by the first surface. A first photodetector has a plurality of pixels positioned within a focal plane of the first lens, which together form a field of view that covers substantially the entire first surface. The second instrument includes a sensor oriented for sensing a physical characteristic of the second surface when the substrate is held in the substrate holding position and the first surface is being illuminated.

Method And System For Discovery Of A Root File System

US Patent:
8112620, Feb 7, 2012
Filed:
Mar 13, 2009
Appl. No.:
12/403738
Inventors:
Olaf Manczak - Hayward CA, US
Anand S. Gupta - Palo Alto CA, US
Christopher A. Vick - San Jose CA, US
Assignee:
Oracle America, Inc. - Redwood City CA
International Classification:
G06F 9/00
G06F 15/177
US Classification:
713 2
Abstract:
A method for discovery of a root file system that includes obtaining a tag corresponding to a boot image for an operating system, identifying, by a boot loader, a location of the boot image having a predefined value matching the tag, loading a kernel of the operating system retrieved from the boot image, and transferring execution to the kernel, wherein the boot loader provides the tag for the location to the kernel. The method further includes identifying, by the kernel, the location of the root file system based on the tag provided by the boot loader, and executing the operating system on a processor using the root file system identified by the kernel.

Method And Apparatus For Improving The Film Quality Of Plasma Enhanced Cvd Films At The Interface

US Patent:
6289843, Sep 18, 2001
Filed:
Aug 21, 2000
Appl. No.:
9/643320
Inventors:
Anand Gupta - San Jose CA
Virendra V. S. Rana - Los Gatos CA
Amrita Verma - Pittsburgh PA
Mohan K. Bhan - Sunnyvale CA
Sudhakar Subrahmanyam - Sunnyvale CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
H05H 100
H05H 124
US Classification:
118723E
Abstract:
A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

Method And Apparatus For Reducing Particle Contamination In A Substrate Processing Chamber

US Patent:
6139923, Oct 31, 2000
Filed:
Mar 17, 1999
Appl. No.:
9/271412
Inventors:
Anand Gupta - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05H 124
US Classification:
427579
Abstract:
A method and apparatus for reducing particle contamination in a substrate processing chamber during deposition of a film having at least two layers. The method of the present invention includes the steps of introducing a first process gas into a chamber to deposit a first layer of the film over a wafer at a first selected pressure, introducing a second process gas into the chamber to deposit a second layer of the film over the wafer, and between deposition of said first and second layers, maintaining pressure within the chamber at a pressure that is sufficiently high that particles dislodged by introduction of the second process do not impact the wafer.

Possible Relatives

David Gupta  Dalip K Gupta  Aakash Gupta  Deborah F Gupta  Deep S Gupta  Deepa Gupta  Deepti Gupta  Anand Nair  Anand Narayan  Anand K Pai 

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