Andrew J Mccutcheon, 57Portland, OR

6514393, Feb 4, 2003

Apr 4, 2000

09/542890

Robert J. Contolini - Lake Oswego OR
Andrew J. McCutcheon - Vancouver WA

Novellus Systems, Inc. - San Jose CA

C25C 1704

20429703, 20429701

An electrochemical reactor is used to electrofill damascene architecture for integrated circuits or for electropolishing magnetic disks. An inflatable bladder is used to screen the applied field during electroplating operations to compensate for potential drop along the radius of a wafer. The bladder establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film seed layer of copper on the wafer.

6586342, Jul 1, 2003

Sep 12, 2001

09/954728

Steven T. Mayer - Lake Oswego OR
Seshasayee Varadarajan - Wilsonville OR
Andrew J. McCutcheon - Oregon City OR

Novellus Systems, Inc. - San Jose CA

H01L 2100

438754, 15634517, 15634521, 216 92, 216100, 438748

Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems apply liquid etchant in a precise manner at the edge bevel region of the wafer under viscous flow conditions, so that the etchant is applied on to the front edge area and flows over the side edge and onto the back edge in a viscous manner. The etchant thus does not flow or splatter onto the active circuit region of the wafer. An edge bevel removal embodiment involving that is particularly effective at obviating streaking, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

7070686, Jul 4, 2006

Oct 21, 2002

10/274755

Robert J. Contolini - Lake Oswego OR, US
Andrew J. McCutcheon - West Linn OR, US
Steven T. Mayer - Lake Oswego OR, US

Novellus Systems, Inc. - San Jose CA

C25D 5/00
C25D 17/00

205 96, 205123, 205125, 205157, 205641, 204224 R, 204244 M, 204212

In an electrochemical reactor used for electrochemical treatment of a substrate, for example, for electroplating or electropolishing the substrate, one or more of the surface area of a field-shaping shield, the shield's distance between the anode and cathode, and the shield's angular orientation is varied during electrochemical treatment to screen the applied field and to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film of conductive metal on the wafer.

5338006, Aug 16, 1994

Sep 16, 1993

8/123421

Andrew J. McCutcheon - Camas WA
Jeffrey M. Bowman - Portland OR
David L. Gambetta - Vancouver WA

Technaflow, Inc. - Vancouver WA

F16K 300

251327

A gate valve sealing unit includes first and second annular seal members that are attached to a main body structure within a passageway that receives and is selectively occluded by a gate. The first and second seal members include first and second rigid mounting hubs to which are mounted first and second annular elastomer sleeves, respectively. Each elastomer sleeve has a continuous lip section and plural axially spaced cavities, the lip sections of the first and second sleeves engaging peripheral margins on opposite sides of the gate when it occludes the passageway and engaging each other otherwise. The first and second mounting hubs include axially outward radial flanges that extend from the respective first and second sides of the main body structure.

5560587, Oct 1, 1996

Jun 16, 1994

8/261344

Andrew J. McCutcheon - Camas WA
Jeffrey M. Bowman - Portland OR
David L. Gambetta - Vancouver WA

Technaflow, Inc. - Vancouver WA

F16K 316

251327

A gate valve sealing unit includes first and second annular seal members that are attached to a main body structure within a passageway that receives and is selectively occluded by a gate. The first and second seal members include first and second rigid mounting hubs to which are mounted first and second annular elastomer sleeves, respectively. Each elastomer sleeve has a continuous lip section and plural axially spaced cavities, the lip sections of the first and second sleeves engaging peripheral margins on opposite sides of the gate when it occludes the passageway and engaging each other otherwise. The first and second mounting hubs include axially outward radial flanges that extend from the respective first and second sides of the main body structure.