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Andrew J Felker, 37Livermore, CA

Known as:
Andrew Jordan Felker Drew Felker Felker Drew
Related to:
Christine S Jotblad

Andrew Felker Phones & Addresses

Livermore, CA   

Pflugerville, TX   

Goleta, CA   

San Luis Obispo, CA   

Work

Company: Chinnery Evans & Nail, P.C. Address:
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Career records & work history

Lawyers & Attorneys

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Andrew Felker - Lawyer

Office:
Chinnery Evans & Nail, P.C.
Specialties:
Business Law, Probate, Real Estate, Estate Planning, Corporate Law, Banking Law, Elder Law
ISLN:
921972326
Admitted:
2010
Law School:
University of Missouri, J.D.

Publications & IP owners

Us Patents

Gallium And Nitrogen Containing Triangular Or Diamond-Shaped Configuration For Optical Devices

US Patent:
8293551, Oct 23, 2012
Filed:
Jun 17, 2011
Appl. No.:
13/163482
Inventors:
Rajat Sharma - Goleta CA, US
Andrew Felker - Goleta CA, US
Assignee:
Soraa, Inc. - Fremont CA
International Classification:
H01L 21/66
US Classification:
438 33, 257 76
Abstract:
A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

Singulation Method And Resulting Device Of Thick Gallium And Nitrogen Containing Substrates

US Patent:
8313964, Nov 20, 2012
Filed:
Jun 17, 2011
Appl. No.:
13/163498
Inventors:
Rajat Sharma - Goleta CA, US
Thomas M. Katona - Goleta CA, US
Andrew Felker - Goleta CA, US
Assignee:
Soraa, Inc. - Fremont CA
International Classification:
H01L 21/00
US Classification:
438 33, 257 76
Abstract:
A method for singulation of thick GaN wafers (e. g. , 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness.

Techniques Of Forming Ohmic Contacts On Gan Light Emitting Diodes

US Patent:
8389305, Mar 5, 2013
Filed:
Mar 13, 2012
Appl. No.:
13/419325
Inventors:
Andrew J. Felker - Fremont CA, US
Nicholas Andrew Vickers - Fremont CA, US
Assignee:
Soraa, Inc. - Fremont CA
International Classification:
H01L 21/00
US Classification:
438 22, 438 16, 438 29, 438 30, 257 91, 257 98, 257 99, 257E21599
Abstract:
A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited.

Techniques Of Forming Ohmic Contacts On Gan Light Emitting Diodes

US Patent:
2012000, Jan 12, 2012
Filed:
Jul 15, 2011
Appl. No.:
13/184160
Inventors:
Andrew J. Felker - Livermore CA, US
Nicholas Andrew Vickers - Hayward CA, US
Assignee:
Soraa, Inc. - Fremont CA
International Classification:
H01L 33/62
US Classification:
438 33, 438 46, 257E33066
Abstract:
A method of forming ohmic contacts on a light emitting diode that features a surface treatment of a substrate includes exposing a surface of a p-type gallium nitride layer to an acid-containing solution and a buffered oxide etch process. A quantum well is formed in a gallium nitride substrate and a layer of p-type gallium nitride is deposited over the quantum well. The surface of the p-type gallium nitride is exposed to an acid-containing solution and then a buffered oxide etch process is performed to provide an etched surface. A metal stack including a layer of silver disposed between layers of platinum is then deposited.

Method Of Fabricating Optical Devices Using Laser Treatment Of Contact Regions Of Gallium And Nitrogen Containing Material

US Patent:
2012010, May 3, 2012
Filed:
Nov 8, 2011
Appl. No.:
13/291922
Inventors:
Andrew Felker - Livermore CA, US
Nicholas A. Vickers - Hayward CA, US
Rafael Aldaz - Pleasanton CA, US
David Press - San Francisco CA, US
Nicholas J. Pfister - Goleta CA, US
James W. Raring - Goleta CA, US
Mathew C. Schmidt - Goleta CA, US
Kenneth John Thomson - San Francisco CA, US
Assignee:
Soraa, Inc. - Fremont CA
International Classification:
H01L 33/06
H01L 33/32
US Classification:
257 14, 438 33, 257E33008, 257E33025
Abstract:
A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

Method For Manufacture Of Bright Gan Leds Using A Selective Removal Process

US Patent:
2012013, May 31, 2012
Filed:
Nov 23, 2011
Appl. No.:
13/304182
Inventors:
Andrew J. Felker - Livermore CA, US
Rafael L. Aldaz - Pleasanton CA, US
Max Batres - Oakland CA, US
Assignee:
Soraa, Inc. - Fremont CA
International Classification:
H01L 33/08
US Classification:
438 33, 257E33055
Abstract:
A method of fabricating LED devices includes using a laser to form trenches between the LEDs and then using a chemical solution to remove slag creating by the laser.

Gallium And Nitrogen Containing Triangular Or Diamond-Shaped Configuration For Optical Devices

US Patent:
2013002, Jan 31, 2013
Filed:
Jan 24, 2012
Appl. No.:
13/357578
Inventors:
Rajat Sharma - Fremont CA, US
Andrew Felker - Fremont CA, US
Assignee:
Soraa, Inc. - Fremont CA
International Classification:
H01L 33/18
US Classification:
257 76, 438 33, 257E33003
Abstract:
A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

Gallium And Nitrogen Containing Triangular Or Diamond-Shaped Configuration For Optical Devices

US Patent:
2017001, Jan 12, 2017
Filed:
Sep 20, 2016
Appl. No.:
15/270928
Inventors:
- Fremont CA, US
ANDREW FELKER - FREMONT CA, US
AURELIEN J.F. DAVID - SAN FRANCISCO CA, US
International Classification:
H01L 33/12
H01L 33/16
H01L 33/00
H01L 33/32
Abstract:
A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.

Possible Relatives

David M Felker  Darold H Felker  Donna B Felker  Dustin L Felker  Elizabeth A Felker  Eugene P Felker  Frank N Felker  Andrew T Last  Andrew R Johnson  Andrew P Stanco 

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