Kim A Vu298 N 7Th St, San Jose, CA 95112

7889638, Feb 15, 2011

Mar 29, 2005

11/094342

Kim Vu - San Jose CA, US
Raj Sarkar - Ann Arbor MI, US
Saeed Nekoomaram - San Mateo CA, US
Prakash Jayaraman - Fremont CA, US

Network Equipment Technologies, Inc. - Fremont CA

G01R 31/08
G06F 11/00
G08C 15/00
H04J 1/16
H04J 3/14
H04L 1/00
H04L 12/26
H04J 3/16
H04J 3/22

370218, 370242, 370469, 714 15

Methods, apparatuses, and systems are presented for conducting a point-to-point (PPP) session relating to establishing a PPP session involving at least a local node and a remote node, wherein the local node comprises a data plane for handling transfer of data for the PPP session at the local node, and wherein the local node comprises a first control plane for controlling operations of the data plane, replicating at least one portion of information accessed by the first control plane, such that the at least one portion of information may be accessed by a second control plane, and switching from the first control plane to the second control plane, such that the second control plane controls operations of the data plane, wherein the second control plane accesses the at least one portion of information replicated from the first control plane, wherein the data plane is capable of continuing to handle transfer of data for the PPP session during switching from the first control plane to the second control plane.

7936691, May 3, 2011

Mar 29, 2005

11/093719

Kim Vu - San Jose CA, US
Raj Sarkar - Ann Arbor MI, US
Saeed Nekoomaram - San Mateo CA, US
Prakash Jayaraman - Fremont CA, US

Network Equipment Technologies, Inc. - Fremont CA

G01R 31/08
G06F 17/00
G06F 7/00

370252, 707610, 707617, 707634

Methods, apparatuses, and systems are presented for replicating data from a first network device to a second network device involving selecting a plurality of data sections containing data accessed by the first network device, systematically assigning at least one replication attribute to each of the plurality of selected data sections, and replicating the plurality of selected data sections from the first network device to the second network device, to create a replicated version of the plurality of selected data sections accessible by the second network device, wherein replication of each of the plurality of selected data sections is performed in accordance with the at least one replication attribute assigned to the selected data section.

2015027, Oct 1, 2015

May 22, 2015

14/719848

- Saint Marys PA, US
Lihua Li - Fremont CA, US
Kim Vu - Milpitas CA, US
Dinh Vu - San Jose CA, US

G01L 9/06
G01R 33/09
G01R 33/07

A device/method for sensing a physical parameter, including a sensor die and a stress-sensitive circuit. The sensor die includes a semiconductor substrate and a cavity that creates an elastic element that bends in response to the physical parameter exerted on the sensor die. The elastic element includes at least at least one rigid island formed within the cavity, a thin area surrounding the at least one rigid island and having smaller thickness than the rigid island, and at least one stress concentrator at least partially formed in the thin area of the elastic element on the side of the substrate opposite the cavity. The stress-sensitive circuit includes at least one stress-sensitive component formed in the thin area of the elastic element. The at least one stress concentrator increases stress in the locations of the at least one stress-sensitive component resulting in an increase of the device sensitivity to the physical parameter.

2015019, Jul 9, 2015

Jan 8, 2014

14/150019

- Schenectady NY, US
Lihua Li - Fremont CA, US
Kim Vu - Milpitas CA, US
Dinh Vu - San Jose CA, US

GENERAL ELECTRIC COMPANY - Schenectady NY

G01L 9/06
B81C 1/00
G01L 9/00

Low pressure sensors and flow sensors are provided. In some embodiments, a pressure sensor can include a sensor die that includes a substrate and a cavity that is formed in a bottom side of the substrate and that defines an elastic element including a thin diaphragm area and a rigid island. A maximum thickness of the rigid island can be substantially smaller than a thickness of the substrate and can be greater than a thickness of the thin diaphragm area. Side walls of the rigid island can be substantially parallel to one another and can be substantially perpendicular to top and bottom surfaces of the wafer and substantially perpendicular to top and bottom surfaces of the die. The side walls of the at least one rigid island can be formed by wet etching the cavity into the die. The wafer can have an impurity diffused in one or more portions thereof prior to the wet etching such that the one or more portions are doped.