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April A Brown, 526560 Long Beach Blvd APT 5, Long Beach, CA 90805

April Brown Phones & Addresses

6560 Long Beach Blvd APT 5, Long Beach, CA 90805   

Lynwood, CA   

Compton, CA   

Los Angeles, CA   

Atlanta, GA   

North Las Vegas, NV   

Mentions for April A Brown

Career records & work history

Lawyers & Attorneys

April Brown Photo 1

April Brown - Lawyer

Specialties:
Criminal Law & Practice, Criminal Law & Practice, Criminal Law & Practice
ISLN:
1000444452
Admitted:
2017

License Records

April Denise Brown

Licenses:
License #: PNT.047756 - Active
Issued Date: Jun 16, 2015
Expiration Date: Jun 16, 2020
Type: Pharmacy Intern

April Denise Brown

Licenses:
License #: PTC.020590 - Expired
Issued Date: Oct 15, 2013
Expiration Date: Apr 15, 2015
Type: Pharmacy Technician Candidate

April Marie Brown

Licenses:
License #: 28919 - Active
Issued Date: Jan 7, 2011
Renew Date: Dec 1, 2015
Expiration Date: Nov 30, 2017
Type: Certified Public Accountant

April Brown resumes & CV records

Resumes

April Brown Photo 47

April Brown - Las Vegas, NV

Work:
Capital One Jan 2012 to 2000
Risk Coordinator
T-Mobile - Santa Monica, CA Oct 2011 to Jan 2012
Retail Sales Associate
G2 Secure Staff (LAX) - Los Angeles, CA Jul 2011 to Jan 2012
Remote Agent
Department of Public Social Services - Los Angeles, CA Dec 2010 to Aug 2011
Intermediate Clerk
Sam's Club - Las Vegas, NV Nov 2007 to Nov 2010
Photo Department Manager
Home Depot - Las Vegas, NV Jun 2006 to Nov 2007
Special Services Clerk

Publications & IP owners

Us Patents

Method Of Fabricating N-Type Antimony-Based Strained Layer Superlattice

US Patent:
5489549, Feb 6, 1996
Filed:
Apr 14, 1994
Appl. No.:
8/223496
Inventors:
Thomas C. Hasenberg - Agoura Hills CA
April S. Brown - Westlake Village CA
Lawrence E. Larson - Santa Monica CA
Assignee:
Hughes Aircraft Company - Los Angeles CA
International Classification:
H01L 2120
US Classification:
437133
Abstract:
High speed Group III-Sb materials are n-doped in a molecular beam epitaxy process by forming a superlattice with n-doped strained layers of a Group III-V compound upon Group III-Sb base layers. The base layers have lower conduction band energy levels than the strained layers, and allow doping electrons from the strained layers to flow into the base layers. The base layers preferably comprise Al. sub. x Ga. sub. 1-x Sb, while the strained layers preferably comprise a binary or ternary compound such as Al. sub. y Ga. sub. 1-y As having a single Group V component, where x and y are each from 0 to 1. The strained layers can be n-doped with silicon or tin, which would produce p-type doping if added directly to the base layers.

N-Type Antimony-Based Strained Layer Superlattice

US Patent:
5420442, May 30, 1995
Filed:
Apr 5, 1994
Appl. No.:
8/223373
Inventors:
Thomas C. Hasenberg - Agoura Hills CA
April S. Brown - Westlake Village CA
Lawrence E. Larson - Santa Monica CA
Assignee:
Hughes Aircraft Company - Los Angeles CA
International Classification:
H01L 2980
H01L 29207
US Classification:
257 22
Abstract:
High speed Group III-Sb materials are n-doped in a molecular beam epitaxy process by forming a superlattice with n-doped strained layers of a Group III-V compound upon Group III-Sb base layers. The base layers have lower conduction band energy levels than the strained layers, and allow doping electrons from the strained layers to flow into the base layers. The base layers preferably comprise Al. sub. x Ga. sub. 1-x Sb, while the strained layers preferably comprise a binary or ternary compound such as Al. sub. y Ga. sub. 1-y As having a single Group V component, where x and y are each from 0 to 1. The strained layers can be n-doped with silicon or tin, which would produce p-type doping if added directly to the base layers.

Isbn (Books And Publications)

Theory Of Modern Electronic Semiconductor Devices

Author:
April S. Brown
ISBN #:
0471415413

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