Arlynn W Smith, 61105 Stonehaven Ln, Blue Ridge, VA 24064

6570147, May 27, 2003

May 22, 2001

09/862852

Arlynn Walter Smith - Blue Ridge VA

ITT Manufacturing Enterprises, Inc. - Wilmington DE

H01J 4014

250214VT, 2502081, 313103 R, 313103 CM, 313105 CM

There is disclosed a color night vision device, which employs a separate image intensifier for each primary color. Thus, the apparatus employs an image intensifier for red, an image intensifier for green and an image intensifier for blue. In one embodiment, each image intensifier produces an image of that color from light which is distributed to the input of the image intensifier through a dichroic X-Cube system. The output of each image intensifier produces an image corresponding to the input image of a corresponding color. Thus, the green image intensifier produces a green image, the red image intensifier produces a red image and the blue image intensifier produces a blue image. The three images are superimposed or combined to produce a true color output image. Superimposition of the images can occur by means of a suitable dichroic output device which is similar to the dichroic input device or in alternate embodiments, the use of bent fibers or charge coupled display devices.

6633125, Oct 14, 2003

May 31, 2001

09/871509

Arlynn Walter Smith - Blue Ridge VA
Rudolph George Benz - Daleville VA

ITT Manufacturing Enterprises, Inc. - Wilmington DE

H01J 4006

313542

A cathode structure for an image intensifier tube operates to extend the spectral range of an image intensifier to the short wavelength infrared (SWIR) range of the electromagnetic spectrum, which is between 1. 0 to 1. 75 m. The cathode structure utilizes a multi-layer structure consisting of a layer of GaSb disposed upon a layer of GaAs. The layers form a heterojunction therebetween where the GaSb material absorbs radiation and the GaAs is for emission characteristics. The doping profiles in each material are used to maximize the effects of band gap offsets of the heterojunction as well as provide a nearly flat conduction band profile for the cathode structure. The condition of nearly flat conduction band is enhanced by the use of blocking contacts at the emission surface of the cathode, where a bias is applied.

6836059, Dec 28, 2004

Mar 25, 2003

10/396906

Arlynn Walter Smith - Blue Ridge VA

ITT Manufacturing Enterprises, Inc. - Wilmington DE

H01J 4300

313103R, 313528, 313103 CM, 313105 CM

An image intensifier and electron multiplier therefor is disclosed. Photons of an image impinge a photo-cathode that converts the photons to electrons. An electron multiplier multiplies the electrons from the photo-cathode to create an increased number of electrons. A sensor captures the increased number of electrons to produce an intensified image. The electron multiplier is an electron bombarded device (EBD) containing a semiconductor structure. The semiconductor structure has an input surface for receiving electrons and an emission surface for passing an increased number of electrons. The semiconductor structure is doped to direct the flow of electrons through the semiconductor structure to an emission area on the emission surface.

6998635, Feb 14, 2006

May 22, 2003

10/443564

Roger S. Sillmon - Troutville VA, US
Arlynn W. Smith - Blue Ridge VA, US
Rudy G. Benz - Daleville VA, US

ITT Manufacturing Enterprises Inc. - Wilmington DE

H01L 29/12

257 10, 257 11, 257 9, 257 21, 257 43, 257184, 257185, 313542, 313346, 313366, 438 20

A photocathode includes a first layer having a first energy band gap for providing absorption of light of wavelengths shorter than or equal to a first wavelength, a second layer having a second energy band gap for providing transmission of light of wavelengths longer than the first wavelength, and a third layer having a third energy band gap for providing absorption of light of wavelengths between the first wavelength and a second wavelength. The first wavelength is shorter than the second wavelength. The first, second and third layers are positioned in sequence between input and output sides of the photocathode.

7015452, Mar 21, 2006

Apr 14, 2004

10/824084

Rudolph G. Benz - Daleville VA, US
Nils I. Thomas - Roanoke VA, US
Arlynn W. Smith - Blue Ridge VA, US

ITT Manufacturing Enterprises, Inc. - Wilmington DE

H01J 31/50

250214VT, 313103 R, 313103 CN

An intensified solid-state imaging sensor includes a photo cathode for converting light from an image into electrons, an electron multiplying device for receiving electrons from the photo cathode, and a solid-state image sensor including a plurality of pixels for receiving the electrons from the electron multiplying device through a plurality of channels of the electron multiplying device. The solid-state image sensor generates an intensified image signal from the electrons received from the electron multiplying device. The plurality of channels are arranged in a plurality of channel patterns, and the plurality of pixels are arranged in a plurality of pixel patterns. Each of the plurality of channel patterns is mapped to a respective one of the plurality of pixel patterns such that electron signals from each of the plurality of channel patterns is substantially received by the single respective one of the plurality of pixel patterns.

7023126, Apr 4, 2006

Dec 3, 2003

10/727705

Arlynn Walter Smith - Blue Ridge VA, US

ITT Manufacturing Enterprises Inc. - Wilmington DE

H01J 43/00

313105CM, 313540

An electron sensing device includes a cathode for providing a source of electrons, and an anode disposed opposite to the cathode for receiving electrons emitted from the cathode. The anode includes a textured surface for reducing halo in the output signal of the electron sensing device. The textured surface may include either pits or inverted pyramids.

7109644, Sep 19, 2006

Dec 3, 2003

10/727761

Arlynn Walter Smith - Blue Ridge VA, US
Warren D. Vrescak - Roanoke VA, US
Nelson Christopher DeVoe - Roanoke VA, US
Steve David Rosine - Roanoke VA, US
William Allen Smith - Daleville VA, US

ITT Manufacturing Enterprises, Inc. - Wilmington DE

H01J 43/00

313103CM, 385115, 385116, 385120, 250214 VT

The present invention provides a mega-boule for use in fabricating microchannel plates (MCPs). The mega-boule includes a cross-sectional surface having at least first, second and third areas, each area occupying a distinct portion of the cross-sectional surface. The first and second areas include a plurality of optical fibers, transversely oriented to the cross-sectional surface, each optical fiber having a cladding formed of non-etchable material and a core formed of etchable material. The third area is disposed interstitially between and surrounding the first and second areas, and includes non-etchable material.

7687759, Mar 30, 2010

Nov 27, 2007

11/945495

Benjamin Ryan Brown - Glade Hill VA, US
Arlynn Walter Smith - Blue Ridge VA, US

ITT Manufacturing Enterprises, Inc. - Wilmington DE

H01J 31/50
H01J 40/14

250214VT, 250207

A microchannel plate (MCP) for an image intensifier includes an active portion having an input surface area for receiving electrons and an output surface area for outputting multiplied electrons. The input and output surface areas are oriented horizontally with respect to each other and spaced by a vertical distance. A non-active portion surrounds the active portion of the MCP. The non-active portion includes at least one slot extending vertically into the non-active portion and extending horizontally to form a horizontal slotted area. When the MCP is positioned vertically above an electron sensing device having wires looping vertically above the electron sensing device, the slot is configured to receive a portion of the wires, resulting in a vertical clearance between the MCP and the electron sensing device. The wires loop a vertical looping distance above a surface of the electron sensing device, and a portion of the vertical looping distance is configured to be received within the slot of the MCP. The horizontal slotted area may be a rectangle, and the input and output surface areas may also be rectangles.