Inventors:
Tae S. Kim - Dallas TX, US
Jin Zhao - Plano TX, US
Nathan J. Kruse - Colorado Springs CO, US
August J. Fischer - Dallas TX, US
Ralf B. Willecke - Dallas TX, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 23/48
Abstract:
A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.