Avery N Goldstein, 59Bham, MI

6361660, Mar 26, 2002

May 8, 2000

09/567109

Avery N. Goldstein - Huntington Woods MI, 48070

C07C 100

20415715, 2041574, 20415752, 2041575, 2041576

A process for reacting a molecule using light as an energy source is described which comprises exposing the molecule to a catalyst material, the catalyst material in contact with an illuminated, quantum confined Group IV semiconductor domain of silicon or germanium. The Group IV semiconductor domain having a band gap greater than bulk silicon and sufficiently large for reacting the molecule. The process is particularly useful in decomposing water into hydrogen and oxygen, as well as photocatalytically degrading pollutants in a waste stream. A device based on a Group IV semiconductor nanoparticles for conducting photo electrochemistry is also disclosed.

6645444, Nov 11, 2003

Jun 29, 2001

09/895942

Avery N. Goldstein - Huntington Woods MI

Nanospin Solutions - Solana Beach CA

C01G 100

423 1, 423 23, 423265, 423266, 75 1062, 75370, 75371, 75373

A process for forming metal nanocrystals involves complexing a metal ion and an organic ligand in a solvent and introducing a reducing agent to reduce a plurality of metal ions to form the metal nanocrystals associated with the organic ligand. The nanocrystals are optionally doped or alloyed with other metals.

6774036, Aug 10, 2004

May 19, 2003

10/440612

Avery N. Goldstein - Huntington Woods MI, 48070

H01L 2144

438660, 438610, 438672, 257770

The formation of microelectronic structures in trenches and vias of an integrated circuit wafer are described using nanocrystal solutions. A nanocrystal solution is applied to flood the wafer surface. The solvent penetrates the trench recesses within the wafer surface. In the process, nanocrystals dissolved or suspended in the solution are carried into these regions. The solvent volatilizes more quickly from the wafer plateaus as compared to the recesses causing the nanocrystals to become concentrated in the shrinking solvent pools within the recesses. The nanocrystals become stranded in the dry trenches. Heating the wafer to a temperature sufficient to sinter or melt the nanocrystals results in the formation of bulk polycrystalline domains. Heating is also carried out concurrently with nanocrystals solution deposition. Copper nanocrystals of less than about 5 nanometers are particularly well suited for formation of interconnects at temperatures of less than 350 degrees Celsius.

6780765, Aug 24, 2004

Mar 19, 2002

10/101905

Avery N. Goldstein - Huntington Woods MI, 48070

H01L 2144

438660, 438610, 438672, 438770

A metal processing method is provided for growing a polycrystalline film by preferably chemical vapor deposition (CVD) from a suitable precursor gas or gases on a substrate which has been coated with seeds, preferably of nanocrystal size, of the metal material. The nanocrystal seeds serve as a template for the structure of the final polycrystalline film. The density of the seeds and the thickness of the grown polycrystalline film determine the grain size of the polycrystalline film at the surface of said film. CVD onto the seeds to produce the polycrystalline film avoids the recrystallization step generally necessary for the formation of a polycrystalline film, and thus allows for the growth of polycrystalline films at reduced temperatures.

6897151, May 24, 2005

Nov 8, 2002

10/290498

Charles H. Winter - Bloomfield Hills MI, US
Zhengkun Yu - Detroit MI, US
Avery N. Goldstein - Huntington Woods MI, US

Wayne State University - Detroit MI

H01L021/44

438687, 438660, 438597

The invention relates to methods of making monodisperse nanocrystals comprising the steps of reducing a copper salt with a reducing agent, providing a passivating agent comprising a nitrogen and/or an oxygen donating moitey and isolating the copper nanocrystals. Moreover, the invention relates to methods for making a copper film comprising the steps of applying a solvent comprising copper nanocrystals onto a substrate and heating the substrate to form a film of continuous bulk copper from said nanocrystals. Finally, the invention also relates to methods for filling a feature on a substrate with copper comprising the steps of applying a solvent comprising copper nanocrystals onto the featured substrate and heating the substrate to fill the feature by forming continuous bulk copper in the feature.

2002000, Jan 17, 2002

Aug 21, 2001

09/934303

Avery Goldstein - Huntington Woods MI, US

H01L021/44

438/660000

The formation of microelectronic structures in trenches and vias of an integrated circuit wafer are described using nanocrystal solutions. A nanocrystal solution is applied to flood the wafer surface. The solvent penetrates the trench recesses within the wafer surface. In the process, nanocrystals dissolved or suspended in the solution are carried into these regions. The solvent volatilizes more quickly from the wafer plateaus as compared to the recesses causing the nanocrystals to become concentrated in the shrinking solvent pools within the recesses. The nanocrystals become stranded in the dry trenches. Heating the wafer to a temperature sufficient to sinter or melt the nanocrystals results in the formation of bulk polycrystalline domains. Heating is also carried out concurrently with nanocrystals solution deposition. Copper nanocrystals of less than about 5 nanometers are particularly well suited for formation of interconnects at temperatures of less than 350 degrees Celsius.

2010011, May 6, 2010

Mar 31, 2008

12/594123

Avery N. Goldstein - Troy MI, US

B01J 19/08
H01M 8/04
F01D 15/00

429 19, 422186, 416146 R, 977773

A field hydrogen generation system. Includes a flexible housing transparent to visible light and a photoelectrochemical cell adapted to be received within a volume of the housing. A quantity of feedstock liquid within the housing is in contact with said photoelectrochemical cell. A conduit is in fluid communication between the volume of the housing and a hydrogen collection vessel.

6277740, Aug 21, 2001

Aug 12, 1999

9/373295

Avery N. Goldstein - Huntington Woods MI

H01L 2144

438660

The formation of microelectronic structures in trenches and vias of an integrated circuit wafer are described using nanocrystal solutions. A nanocrystal solution is applied to flood the wafer surface. The solvent penetrates the trench recesses within the wafer surface. In the process, nanocrystals dissolved or suspended in the solution are carried into these regions. The solvent volatilizes more quickly from the wafer plateaus as compared to the recesses causing the nanocrystals to become concentrated in the shrinking solvent pools within the recesses. The nanocrystals become stranded in the dry trenches. Heating the wafer to a temperature sufficient to sinter or melt the nanocrystals results in the formation of bulk polycrystalline domains. Heating is also carried out concurrently with nanocrystals solution deposition. Copper nanocrystals of less than about 5 nanometers are particularly well suited for formation of interconnects at temperatures of less than 350 degrees Celcius.