BackgroundCheck.run
Search For

Xin Bao, 5611638 Chesterwood Pl, San Diego, CA 92130

Xin Bao Phones & Addresses

11638 Chesterwood Pl, San Diego, CA 92130   

7463 Park Village Rd, San Diego, CA 92129    858-4849926   

13034 Wimberly Sq, San Diego, CA 92128    858-5130418   

Riverside, CA   

Round Rock, TX   

Austin, TX   

Sarasota, FL   

Bell, CA   

Woodland Hills, CA   

Mentions for Xin Bao

Resumes and CV

Resumes

Xin Bao Photo 1

Senior Director Of Technology

Location:
San Diego, CA
Industry:
Wireless
Work:
Qualcomm
Senior Director of Technology
Education:
University of California
University of California, Riverside
Masters, Computer Science
Skills:
Soc Integration, Synthesis, Power Intent, Node.js, Overall Chip Implementation Flow, Design Quality Tracking, Sta, Clp, Tcl, Equivalence Checking, Soc Automation, Javascript, C++, Sdc, Synopsys Primetime, Scripting, Timing Constraints, Design Compiler, Upf, Databases
Xin Bao Photo 2

Senior Engineer

Industry:
Electrical/Electronic Manufacturing
Education:
Xi'an Jiaotong University
Xin Bao Photo 3

Senior Staff Engineer/Manager At Qualcomm

Position:
Senior Staff Engineer/Manager at Qualcomm
Location:
Greater San Diego Area
Industry:
Telecommunications
Work:
Qualcomm
Senior Staff Engineer/Manager
Education:
University of California, Riverside 1995 - 1997
Master, Computer Science

Publications

Wikipedia

Xin Bao Photo 4

Bao Xin

This is a Chinese name; the family name is Bao (). Bao Xin (152 - 192) was an imperial general in the late Eastern Han Dynasty in ancient China. ...

Us Patents

Nanowire Photodetector And Image Sensor With Internal Gain

US Patent:
2010029, Nov 25, 2010
Filed:
Feb 26, 2008
Appl. No.:
12/528701
Inventors:
Deli Wang - San Diego CA, US
Cesare Soci - San Diego CA, US
Yu-Hwa Lo - San Diego CA, US
Arthur Zhang - San Diego CA, US
David Aplin - La Jolla CA, US
Lingquan Wang - San Diego CA, US
Shadi Dayeh - La Jolla CA, US
Xin Yu Bao - San Diego CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 27/146
H01L 31/18
US Classification:
257 21, 438478, 257E31032, 257E27133
Abstract:
A practical ID nanowire photodetector with high gain that can be controlled by a radial electric field established in the ID nanowire. A ID nanowire photodetector device of the invention includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to the nanowire inhibits photo-carrier recombination, thus enhancing the photocurrent response. The invention further provides circuits of ID nanowire photodetectors, with groups of photodetectors addressed by their individual ID nanowires electrode contacts. The invention also provides a method for placement of ID nanostructures, including nanowires, with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of ID nanostructures. The ID nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the ID nanostructures in predetermined, registered positions on the substrate.

Nanowire Photodetector And Image Sensor With Internal Gain

US Patent:
2014010, Apr 17, 2014
Filed:
Mar 11, 2013
Appl. No.:
13/793545
Inventors:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - , US
Cesare Soci - La Jolla CA, US
Yu-Hwa Lo - San Diego CA, US
Arthur Zhang - San Diego CA, US
David Aplin - Cambridgeshire, GB
Lingquan Wang - Santa Clara CA, US
Shadi Dayeh - Los Alamos NM, US
Xin Yu Bao - Mountain View CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 31/0352
H01L 27/146
US Classification:
257 21, 438478, 977954
Abstract:
A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to inhibits photo-carrier recombination, thus enhancing the photocurrent response. Circuits of 1D nanowire photodetectors include groups of photodetectors addressed by their individual 1D nanowire electrode contacts. Placement of 1D nanostructures is accomplished with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of 1D nanostructures. The 1D nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the 1D nanostructures in predetermined, registered positions on the substrate.

NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.