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Barry S Wechsler, 656 Edinburg Ln, East Brunswick, NJ 08816

Barry Wechsler Phones & Addresses

6 Edinburg Ln, East Brunswick, NJ 08816    732-6138732   

E Brunswick, NJ   

Lake Worth, FL   

Staten Island, NY   

6103 Oaks Blvd, North Brunswick, NJ 08902   

Boynton Beach, FL   

Flushing, NY   

Work

Company: Buchbinder tunick & company llp Address: 1 Pennsylvania Plaza, New York, NY 10199 Phones: 212-6955003 Position: Engineer Industries: Accounting, Auditing, and Bookkeeping Services

Education

Degree: Associate degree or higher

Mentions for Barry S Wechsler

Barry Wechsler resumes & CV records

Resumes

Barry Wechsler Photo 12

Partner At Raich Ende Malter & Co., Llp

Position:
Partner at Raich Ende Malter & Co., LLP
Location:
Greater New York City Area
Industry:
Accounting
Work:
Raich Ende Malter & Co., LLP - New York, NY since Jul 2011
Partner
Buchbinder Tunick & Co LLP Jan 1990 - May 2010
Partner
Education:
State University of New York at New Paltz 1977 - 1981
BS, Business
Skills:
Tax, Financial Reporting
Barry Wechsler Photo 13

Partner

Location:
6 Edinburg Ln, East Brunswick, NJ 08816
Industry:
Accounting
Work:
Raich Ende Malter & Co., Llp
Partner
Buchbinder Tunick & Co Jul 1, 1990 - Jun 1, 2011
Partner
Education:
Suny New Paltz 1977 - 1981
Bachelors, Bachelor of Science, Business
Suny New Paltz
Skills:
Tax, Financial Reporting, Corporate Tax, Accounting, Auditing, Tax Preparation, Tax Accounting, Cpa, Partnership Taxation, Gaap, Tax Returns, Finance, Financial Accounting, Sec Filings, Tax Advisory, Income Tax, Due Diligence, Assurance, Sarbanes Oxley Act, Budgets, Mergers

Publications & IP owners

Us Patents

Doped Stoichiometric Lithium Niobate And Lithium Tantalate For Self-Frequency Conversion Lasers

US Patent:
2005019, Sep 1, 2005
Filed:
Jun 24, 2004
Appl. No.:
10/877805
Inventors:
Michael Scripsick - Florham Park NJ, US
Barry Wechsler - Kinnelon NJ, US
International Classification:
H01S003/16
US Classification:
372041000, 372068000
Abstract:
In accordance with the present invention, a crystal laser material that is suitable for self doubling is presented. A crystal according to the present invention includes a stoichiometric lithium niobate crystal isomorph host material doped with at least one laser ion. In some embodiments, the stoichiometric lithium niobate crystal isomorph host material is lithium niobate. In some embodiments, the stoichiometric lithium niobate crystal isomorph host material is lithium tantalate. In some embodiments, the at least one laser ion includes Ytterbium. In some embodiments, the at least one laser ion includes a rare-earth ion. In some embodiments, the stoichiometric lithium niobate crystal isomorph host material is periodically poled to provide quasi-phase matching. Additionally, further dopant ions, for example Magnesium, can be included.

Doped Stoichiometric Lithium Niobate And Lithium Tantalate For Self-Frequency Conversion Lasers

US Patent:
2007015, Jul 5, 2007
Filed:
Nov 22, 2006
Appl. No.:
11/604174
Inventors:
Michale Scripsick - Florham Park NJ, US
Barry Wechsler - Kinnelon NJ, US
International Classification:
H01S 3/14
US Classification:
372039000
Abstract:
In accordance with the present invention, a crystal laser material that is suitable for self doubling is presented. A crystal according to the present invention includes a stoichiometric lithium niobate crystal isomorph host material doped with at least one laser ion. In some embodiments, the stoichiometric lithium niobate crystal isomorph host material is lithium niobate. In some embodiments, the stoichiometric lithium niobate crystal isomorph host material is lithium tantalate. In some embodiments, the at least one laser ion includes Ytterbium. In some embodiments, the at least one laser ion includes a rare-earth ion. In some embodiments, the stoichiometric lithium niobate crystal isomorph host material is periodically poled to provide quasi-phase matching. Additionally, further dopant ions, for example Magnesium, can be included.

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