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Benjamin J Petro, 449242 W Stanford Ct, Mokena, IL 60448

Benjamin Petro Phones & Addresses

9242 W Stanford Ct, Mokena, IL 60448   

La Grange Park, IL   

16520 Skyline Dr, Tinley Park, IL 60477    708-5325598   

16520 Skyline Dr, Tinley Park, IL 60477    708-7438947   

Work

Position: Food Preparation and Serving Related Occupations

Education

Degree: Associate degree or higher

Emails

Mentions for Benjamin J Petro

Benjamin Petro resumes & CV records

Resumes

Benjamin Petro Photo 17

Benjamin Petro

Skills:
Credit Trading
Benjamin Petro Photo 18

Benjamin Petro

Location:
United States
Benjamin Petro Photo 19

Research Professional

Location:
Greater Chicago Area
Industry:
Research

Publications & IP owners

Us Patents

Composition And Method For Dielectric Cmp

US Patent:
2021011, Apr 22, 2021
Filed:
Oct 22, 2020
Appl. No.:
17/077070
Inventors:
- Aurora IL, US
Steven KRAFT - Elgin IL, US
Fernando HUNG LOW - Naperville IL, US
Benjamin PETRO - St. Charles IL, US
Na ZHANG - Naperville IL, US
Julianne TRUFFA - New Lenox IL, US
International Classification:
C09G 1/02
C09G 1/16
C01F 17/229
C01F 17/235
Abstract:
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of greater than about 6 meq/g.

Composition And Method For Dielectric Cmp

US Patent:
2021011, Apr 22, 2021
Filed:
Oct 22, 2020
Appl. No.:
17/077155
Inventors:
- Aurora IL, US
Steven KRAFT - Elgin IL, US
Fernando HUNG LOW - Naperville IL, US
Benjamin PETRO - St. Charles IL, US
Na ZHANG - Naperville IL, US
Julianne TRUFFA - New Lenox IL, US
International Classification:
C09G 1/02
C09K 3/14
B24B 37/04
Abstract:
A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of less than about 6 meq/g.

Cobalt Polishing Accelerators

US Patent:
2017026, Sep 14, 2017
Filed:
May 24, 2017
Appl. No.:
15/603634
Inventors:
- Aurora IL, US
Andrew WOLFF - Darien IL, US
Phillip W. CARTER - Round Lake IL, US
Kristin HAYES - St. Charles IL, US
Benjamin PETRO - Aurora IL, US
International Classification:
C09G 1/02
H01L 21/321
B24B 37/04
C23F 3/04
Abstract:
The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NRRRwherein R, R, and Rare independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R, R, and Rare hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about to about . The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Cobalt Polishing Accelerators

US Patent:
2016011, Apr 28, 2016
Filed:
Oct 21, 2015
Appl. No.:
14/919449
Inventors:
- Aurora IL, US
Andrew Wolff - Darien IL, US
Phillip W. Carter - Round Lake IL, US
Kristin Hayes - St. Charles IL, US
Benjamin Petro - Aurora IL, US
International Classification:
C09G 1/02
H01L 21/321
B24B 37/04
Abstract:
The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NRRRwherein R, R, and Rare independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R, R, and Rare hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Slurry For Chemical Mechanical Polishing Of Cobalt

US Patent:
2016010, Apr 21, 2016
Filed:
Oct 21, 2015
Appl. No.:
14/919526
Inventors:
- Aurora IL, US
Witold Paw - Aurora IL, US
Benjamin Petro - Aurora IL, US
Jeffrey Cross - Batavia IL, US
Glenn Whitener - Batavia IL, US
International Classification:
C09G 1/02
C23F 1/30
B24B 37/04
C23F 11/04
Abstract:
The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising alumina particles, silica particles, or a combination thereof, (b) a rate accelerator comprising a phosphonic acid, an N-heterocyclic compound, or a combination thereof, (c) a corrosion inhibitor comprising an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, a fatty acid amino acid, an amine, an amide, or a combination thereof, (d) an oxidizing agent, and (e) an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a cobalt layer, with the polishing composition.

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