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Bing Jian Li, 61Monterey Park, CA

Known as:
Bing J Li Jian Bing Li Jian Li Bing Bingjian Li Li J Bing Jian Libing
Related to:
Lan Dong Li

Bing Li Phones & Addresses

Monterey Park, CA   

11726 Forest Grove St, El Monte, CA 91732    626-5790678   

New York, NY   

Alhambra, CA   

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Mentions for Bing Jian Li

Career records & work history

Lawyers & Attorneys

Bing Li Photo 1

Bing Li, New York NY - Lawyer

Address:
Law Offices of Bing Li, LLC
980 Avenue Of The Americas Rm 405, New York, NY 10018
212-9677690 (Office)
Licenses:
New York - Currently registered 1999
Education:
New York Law School
Bing Li Photo 2

Bing Li

Medicine Doctors

Bing Li Photo 3

Dr. Bing Li, Arcadia CA - MD (Doctor of Medicine)

Specialties:
Anesthesiology
Address:
483 Los Altos Ave, Arcadia, CA 91007
626-4462188 (Phone) 626-4462587 (Fax)
Certifications:
Anesthesiology, 2004
Awards:
Healthgrades Honor Roll
Languages:
English
Chinese, Mandarin
Education:
Medical School
Peking University Medical College / Beijing Medical University
Medical School
University Of S Ca/Lac and Usc
Medical School
Washington U/B Jh/Slch Conc
Bing Li Photo 4

Bing Li

Specialties:
Anesthesiology
Education:
Beijing School Of Medicine (1989)

Bing Li resumes & CV records

Resumes

Bing Li Photo 50

Bing Li - Chapel Hill, NC

Work:
Instem Information Systems (Shanghai) Ltd. China Apr 2014 to 2000
Business Consultant Shenzhen Mingsight Relin Pharmaceuticals Inc - Shenzhen, China Jun 2011 to Nov 2013
Director of Project Management China Preclinical Management Services May 2008 to Jun 2011
Director of Quality Assurance Boehringer Ingelheim Pharmaceuticals, Inc - Ridgefield, CT Oct 2000 to Apr 2007
Senior Research Assistant, KC Pharmaceuticals - Pomona, CA Jan 2000 to Jun 2000
QC Manager United Medical Reference Laboratory - Baldwin Park, CA Jun 1998 to Dec 1999
Analytical Chemist Pyramid Laboratories, Inc - Costa Mesa, CA Jan 1998 to May 1998
Analytical Chemist University of California - Irvine, CA May 1997 to May 1997
Research Associate Midwest Isotope Diagnostic Imaging, Ltd - Cincinnati, OH Sep 1996 to Apr 1997
Analytical Chemist Ohio University - Athens, OH Sep 1993 to Aug 1996
Research/Teaching Assistant Hepato-Biliary Disease Research Institute Sep 1989 to Aug 1993
Research Associate
Education:
Ohio University 1993 to 1997
MS in Biochemistry Nankai University Sep 1985 to Sep 1989
Bachelor of Science in Chemistry
Bing Li Photo 51

Bing Li - Forest Hills, NY

Work:
Family Homecare Services of Brookyln and Queens, Inc - Brooklyn, NY Sep 2000 to Sep 2000
Human Resource Assistant
Education:
ASA Institute College of Advanced Technology - Brooklyn, NY Aug 1988 to Aug 1990
Associate in Medical Assisting Fashion Institute of Technology - New York, NY
AS in Textile/Surface Design
Skills:
Medical Manager 10.0 and Medisoft, HCPSCS, ICD-9 and CPT coding, Aseptic Technique, Specimen Collection (Finger Puncture Phlebotomy and Urinalysis), Medical Ethic and Strong Analytical Skills, Insurance Claims Processing, Clinical Office Procedures and Medical Office Administration, EKG, CPR, Vital Signs, and Visual Acuity Examination, Microsoft Office for Windows XP; Word and Excel
Bing Li Photo 52

Bing Li - West Hills, CA

Work:
Farmers Insurance Group Apr 2007 to 2000
Senior Analyst (Personal Lines) / Assistant Product Manager (Home Insurance) Pi Capital Inc - Los Angeles, CA Jan 2007 to Apr 2007
Vice President of Research Pi Capital Inc - Los Angeles, CA Apr 2005 to Dec 2006
Senior Investment Analyst One-To-One Service.Com - Champaign, IL Sep 2004 to Apr 2005
Financial Analyst Illinois Business Consulting - Urbana, IL Sep 2001 to Aug 2002
Consultant
Education:
University of Illinois at Urbana-Champaign - Urbana, IL 2004
MBA in Finance & Accounting University of Illinois at Urbana-Champaign - Urbana, IL 2001
MA in African Studies (Economics) Beijing Foreign Studies University
BA in English & Swahili
Skills:
Microsoft Office Suite, Capital IQ

Publications & IP owners

Us Patents

Distributed Amplifier Optical Modulators

US Patent:
7039258, May 2, 2006
Filed:
Aug 13, 2004
Appl. No.:
10/917927
Inventors:
Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-By-The-Sea CA, US
Assignee:
Luxtera, Inc. - Carlsbad CA
International Classification:
G02F 1/025
US Classification:
385 1, 385 3, 385 14
Abstract:
High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.

Doping Profiles In Pn Diode Optical Modulators

US Patent:
7085443, Aug 1, 2006
Filed:
Aug 11, 2004
Appl. No.:
10/916857
Inventors:
Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-by-the-Sea CA, US
Assignee:
Luxtera, Inc. - Carlsbad CA
International Classification:
G02F 1/035
G02B 6/12
US Classification:
385 14, 385 3, 385 40, 359245
Abstract:
High speed optical modulators can be made of a lateral PN diode formed in a silicon optical waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

Pn Diode Optical Modulators Fabricated In Rib Waveguides

US Patent:
7116853, Oct 3, 2006
Filed:
Aug 11, 2004
Appl. No.:
10/917204
Inventors:
Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-by-the-Sea CA, US
Assignee:
Luxtera, Inc. - Carlsbad CA
International Classification:
G02B 6/12
US Classification:
385 14, 385 3, 257499
Abstract:
High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

Pn Diode Optical Modulators Fabricated In Strip Loaded Waveguides

US Patent:
7136544, Nov 14, 2006
Filed:
Aug 11, 2004
Appl. No.:
10/916839
Inventors:
Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-by-the-Sea CA, US
Assignee:
Luxtera, Inc. - Carlsbad CA
International Classification:
G02F 1/025
G02B 6/10
US Classification:
385 3, 385129, 385 14
Abstract:
High speed optical modulators can be made of a lateral PN diode formed in a strip loaded optical waveguide on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Due to differences in fabrication methods, forming strip loaded waveguides with consistent properties for use in PN diode optical modulators is much easier than fabricating similar rib waveguides.

Doping Profiles In Pn Diode Optical Modulators

US Patent:
7251408, Jul 31, 2007
Filed:
Apr 5, 2006
Appl. No.:
11/400163
Inventors:
Roger Koumans - Irvine CA, US
Bing Li - San Diego CA, US
Guo Liang Li - San Diego CA, US
Thierry J. Pinguet - Cardif-By-The-Sea CA, US
Assignee:
Luxtera, Inc. - Carlsbad CA
International Classification:
G02B 6/10
G02B 6/26
G02F 1/035
US Classification:
385132, 385 3, 385 40
Abstract:
High speed optical modulators can be made of a lateral PN diode formed in a silicon optical rib waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

Diaryl Substituted Alkanes

US Patent:
8124628, Feb 28, 2012
Filed:
Apr 6, 2007
Appl. No.:
12/296117
Inventors:
Lin Chu - Scotch Plains NJ, US
Bing Li - Towaco NJ, US
Anthony K. Ogawa - Mountainside NJ, US
Hyun O. Ok - Colonia NJ, US
Debra L. Ondeyka - Fanwood NJ, US
Minal Patel - Galloway NJ, US
Rosemary Sisco - Old Bridge NJ, US
Feroze Ujjainwalla - Scotch Plains NJ, US
Jinyou Xu - Scotch Plains NJ, US
Assignee:
Merck Sharp & Dohme Corp. - Rahway NJ
International Classification:
A61K 31/5377
A61K 31/506
A61K 31/501
A61K 31/4545
A61K 31/444
A61K 31/4439
C07D 417/14
C07D 413/14
C07D 407/14
C07D 401/14
US Classification:
514333, 51425202, 51425205, 51425203, 5142365, 514274, 514342, 546256, 5462691, 5462697, 544238, 544114, 544316
Abstract:
The instant invention provides compounds of Formula II which are 5-lipoxygenase activating protein inhibitors.

Pyrrolidine Derived Beta 3 Adrenergic Receptor Agonists

US Patent:
8354403, Jan 15, 2013
Filed:
Aug 17, 2010
Appl. No.:
13/392662
Inventors:
Scott D. Edmondson - Clark NJ, US
Richard Berger - Princeton NJ, US
Lehua Chang - Ramsey NJ, US
Vincent J. Colandrea - North Brunswick NJ, US
Jeffrey J. Hale - Westfield NJ, US
Bart Harper - New York NY, US
Nam Fung Kar - Brooklyn NY, US
Bing Li - Towaco NJ, US
Greg J. Morriello - Randolph NJ, US
Christopher R. Moyes - Westfield NJ, US
Deyou Sha - Yardley PA, US
Liping Wang - Cranbury NJ, US
Harvey Wendt - Medford Lakes NJ, US
Cheng Zhu - Edison NJ, US
Assignee:
Merck Sharp & Dohme Corp. - Rahway NJ
International Classification:
A61K 31/536
A61K 31/438
A61K 31/4245
C07D 265/12
C07D 221/20
C07D 413/14
US Classification:
5142305, 514278, 514364, 544 92, 546 16, 548131
Abstract:
The present invention provides compounds of Formula (I), pharmaceutical compositions thereof, and method of using the same in the treatment or prevention of diseases mediated by the activation of β3-adrenoceptor.

Diaryl Substituted Alkanes

US Patent:
8426413, Apr 23, 2013
Filed:
Feb 23, 2012
Appl. No.:
13/403643
Inventors:
Lin Chu - Scotch Plains NJ, US
Bing Li - Towaco NJ, US
Anthony K. Ogawa - Mountainside NJ, US
Hyun O. Ok - Colonia NJ, US
Debra L. Ondeyka - Fanwood NJ, US
Minal Patel - Galloway NJ, US
Rosemary Sisco - Old Bridge NJ, US
Feroze Ujjainwalla - Scotch Plains NJ, US
Jinyou Xu - Scotch Plains NJ, US
Assignee:
Merck Sharp & Dohme Corp. - Rahway NJ
International Classification:
A61K 31/506
A61K 31/501
A61K 31/444
C07D 401/14
C07D 401/04
US Classification:
51425203, 514275, 51425202, 514334, 544238, 544331, 546257
Abstract:
The instant invention provides compounds of Formula II which are 5-lipoxygenase activating protein inhibitors.

Isbn (Books And Publications)

Yin Hang Jian Guan Bian Jie Wen Ti Yan Jiu

Author:
Bing Li
ISBN #:
7504937614

Hai Jun Ying Hao: Ren Min Hai Jun Ying Mo Hui Cui

Author:
Bing Li
ISBN #:
7801517741

Possible Relatives

Cynthia M Li  David Li  Dawei Li  Dayu W Li  De Li  Dean Li  Da Li  Bing W Lin  Bing Liu  Bing H Moy 

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