Blake Darby resumes & CV records
Resumes
Blake L Darby, 399008 Albatross Ct, Raleigh, NC 27613
Blake Darby Phones & Addresses
Raleigh, NC
Beaverton, OR
Portland, OR
Gainesville, FL
Virginia Beach, VA
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Blake L Darby
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Mentions for Blake L Darby
Publications & IP owners
Us Patents
Material Engineering For High Performance Li-Ion Battery Electrodes
US Patent:
2013018, Jul 25, 2013
Filed:
Jan 25, 2012
Appl. No.:
13/357647
Inventors:
Blake L. Darby - Gainesville FL, US
Ludovic Godet - Boston MA, US
Xianfeng Lu - Beverly MA, US
Tristan Yonghui Ma - Lexington MA, US
Ludovic Godet - Boston MA, US
Xianfeng Lu - Beverly MA, US
Tristan Yonghui Ma - Lexington MA, US
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA
International Classification:
H01M 4/131
C23C 16/26
C23C 16/56
H01M 2/16
C23C 16/50
C23C 16/26
C23C 16/56
H01M 2/16
C23C 16/50
US Classification:
429221, 429246, 429224, 4292313, 4292311, 427577, 216 13
Abstract:
A method of treating an electrode for a battery to enhance its performance is disclosed. By depositing a layer of porous carbon onto the electrode, its charging and discharging characteristics, as well as chemical stability may be improved. The method includes creating a plasma that includes carbon and attracting the plasma toward the electrode, such as by biasing a platen on which the electrode is disposed. In some embodiments, an etching process is also performed on the deposited porous carbon to increase its surface area. The electrode may also be exposed to a hydrophilic treatment to improve its interaction with the electrolyte. In addition, a battery which includes at least one electrode treated according to this process is disclosed.
Engineering Of Porous Coatings Formed By Ion-Assisted Direct Deposition
US Patent:
2013005, Feb 28, 2013
Filed:
Aug 28, 2012
Appl. No.:
13/597146
Inventors:
Blake Darby - Gainesville FL, US
Ludovic GODET - Boston MA, US
Xianfeng LU - Chandler AZ, US
Ludovic GODET - Boston MA, US
Xianfeng LU - Chandler AZ, US
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA
International Classification:
H01L 21/20
H01M 10/04
H01M 10/04
US Classification:
438508, 427578, 427569, 216 13, 257E2109
Abstract:
In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles.
Structures Including Porous Germanium, Methods Of Making, And Methods Of Use Thereof
US Patent:
2014012, May 8, 2014
Filed:
Jun 26, 2012
Appl. No.:
14/112262
Inventors:
- Gainsville FL, US
Bradley Robert Yates - Gainesville FL, US
Blake Leonardl Darby - Gainesville FL, US
Bradley Robert Yates - Gainesville FL, US
Blake Leonardl Darby - Gainesville FL, US
International Classification:
H01M 4/38
H01M 4/1395
H01M 4/04
H01M 4/1395
H01M 4/04
US Classification:
429220, 4292181, 429221, 429223, 427531, 427528
Abstract:
Embodiments of the present disclosure provide for a structure, methods of making the structure, methods of using the structure, and the like. In particular, the structure includes a porous germanium layer, where the porous germanium layer includes a porous network that improves the performance of the structure.
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