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Bo Xie, 74San Jose, CA

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San Jose, CA   

Santa Clara, CA   

925 Wolfe Rd, Sunnyvale, CA 94086   

1300 Fort Lowell Rd, Tucson, AZ 85719    520-3277060   

951 10Th St, Tucson, AZ 85719    520-7924463   

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Bo Xie

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Work

Company: The university of texas at austin Aug 2012 to Aug 2013 Address: Austin, Texas Position: Associate professor

Education

Degree: PhD School / High School: Rensselaer Polytechnic Institute 2000 to 2006 Specialities: Science and Technology Studies

Skills

Public Health • Teaching • Research • Social Networking • Statistics • SPSS • E-learning • Data Analysis • Healthcare IT • Social Media • Psychology • Access • Health

Industries

Higher Education

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Resumes

Resumes

Bo Xie Photo 1

Associate Professor At The University Of Texas At Austin

Position:
Associate Professor at The University of Texas at Austin
Location:
Austin, Texas
Industry:
Higher Education
Work:
The University of Texas at Austin - Austin, Texas since Aug 2012
Associate Professor
Education:
Rensselaer Polytechnic Institute 2000 - 2006
PhD, Science and Technology Studies
Skills:
Public Health, Teaching, Research, Social Networking, Statistics, SPSS, E-learning, Data Analysis, Healthcare IT, Social Media, Psychology, Access, Health

Publications

Us Patents

Frontside Structure Damage Protected Megasonics Clean

US Patent:
7682457, Mar 23, 2010
Filed:
Oct 4, 2007
Appl. No.:
11/973039
Inventors:
Zhiyong Li - San Jose CA,
Jianshe Tang - San Jose CA,
Bo Xie - Sunnyvale CA,
Wei Lu - Fremont CA,
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B08B 3/12
US Classification:
134 1, 134 13, 134 2, 134 3, 134 26, 134 28, 134 32, 134 33, 134 34, 134 36, 134 40, 134 41, 134 42, 134902
Abstract:
An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.

Dielectric Recovery Of Plasma Damaged Low-K Films By Uv-Assisted Photochemical Deposition

US Patent:
8216861, Jul 10, 2012
Filed:
Jun 28, 2011
Appl. No.:
13/171132
Inventors:
Kang Sub Yim - Palo Alto CA,
Thomas Nowak - Cupertino CA,
Bo Xie - Santa Clara CA,
Alexandros T. Demos - Fremont CA,
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/00
US Classification:
438 4, 438778, 257E21471
Abstract:
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

Microelectronic Structure Including A Low K Dielectric And A Method Of Controlling Carbon Distribution In The Structure

US Patent:
8349746, Jan 8, 2013
Filed:
Feb 23, 2010
Appl. No.:
12/660294
Inventors:
Bo Xie - Sunnyvale CA,
Alexandros T. Demos - Fremont CA,
Daemian Raj - San Jose CA,
Sure Ngo - Dublin CA,
Kang Sub Yim - Santa Clara CA,
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/469
US Classification:
438787, 257635, 257632, 257751, 257E21277, 257E23002, 438761, 438783, 438643, 438786, 438778
Abstract:
Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2. 6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.

Uv Assisted Silylation For Recovery And Pore Sealing Of Damaged Low K Films

US Patent:
8492170, Jul 23, 2013
Filed:
Apr 25, 2011
Appl. No.:
13/093351
Inventors:
Bo Xie - Santa Clara CA,
Alexandros T. Demos - Fremont CA,
Kang Sub Yim - Palo Alto CA,
Thomas Nowak - Cupertino CA,
Kelvin Chan - San Jose CA,
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/30
US Classification:
438 4, 438597, 438795
Abstract:
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

Methods And Apparatus For Cleaning A Substrate

US Patent:
2007023, Oct 11, 2007
Filed:
Mar 23, 2007
Appl. No.:
11/690621
Inventors:
WEI LU - Fremont CA,
Jianshe Tang - San Jose CA,
Alexander Ko - Santa Clara CA,
Nelson Yee - Redwood City CA,
Bo Xie - Sunnyvale CA,
John Lee - San Jose CA,
Richard Endo - San Carlos CA,
International Classification:
B05C 5/00
US Classification:
118300000, 134172000
Abstract:
The present invention provides methods, apparatus, and systems for cleaning a substrate that include a controller and a nozzle coupled to the controller. The controller is adapted to direct the nozzle to dispense a uniform fluid spray pattern onto a substrate. The controller is adapted create the uniform fluid spray pattern by adjusting at least one operational parameter of the nozzle to cause a predefined percentage of droplets to be within a predetermined size range. Numerous other aspects are disclosed.

Methods And Apparatus For Cleaning A Substrate

US Patent:
2007024, Oct 25, 2007
Filed:
Mar 23, 2007
Appl. No.:
11/690628
Inventors:
Wei Lu - Fremont CA,
Jianshe Tang - San Jose CA,
Alexander Ko - Santa Clara CA,
Nelson Yee - Redwood City CA,
Bo Xie - Sunnyvale CA,
John Lee - San Jose CA,
Rick Endo - San Carlos CA,
International Classification:
B08B 3/00
B08B 7/00
US Classification:
134033000, 134034000, 134026000
Abstract:
The present invention provides methods, apparatus, and systems for cleaning a substrate that include a controller and a nozzle coupled to the controller. The controller is adapted to direct the nozzle to dispense a uniform fluid spray pattern onto a substrate. The controller is adapted create the uniform fluid spray pattern by adjusting at least one operational parameter of the nozzle to cause a predefined percentage of droplets to be within a predetermined size range. Numerous other aspects are disclosed.

Semiconductor Substrate Cleaning Apparatus

US Patent:
2008005, Mar 6, 2008
Filed:
Aug 9, 2007
Appl. No.:
11/891339
Inventors:
Jianshe Tang - San Jose CA,
Wei Lu - Fremont CA,
Zhiyong Li - Santa Clara CA,
Bo Xie - Sunnyvale CA,
Alexander Ko - Santa Clara CA,
International Classification:
B08B 3/02
US Classification:
134028000, 134198000, 134026000
Abstract:
A semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The semiconductor substrate processing apparatus may include a liquid container where a semiconductor substrate may be immersed in a semiconductor processing liquid. The semiconductor substrate may then be removed from the semiconductor processing liquid while vapor is directed at a surface of the semiconductor substrate where the semiconductor substrate contacts a surface of the processing liquid.

Method And Apparatus For Active Particle And Contaminant Removal In Wet Clean Processes In Semiconductor Manufacturing

US Patent:
2008013, Jun 12, 2008
Filed:
Oct 25, 2007
Appl. No.:
11/977935
Inventors:
Wei Lu - Fremont CA,
Jianshe Tang - San Jose CA,
Alexander Sou-Kang Ko - Santa Clara CA,
Nelson A. Yee - Redwood City CA,
Bo Xie - Sunnyvale CA,
International Classification:
B08B 3/02
B08B 5/00
B08B 11/02
US Classification:
134 30, 134 33
Abstract:
An apparatus and a method for cleaning a wafer are described. A chamber has a substrate support. A nozzle is disposed above the substrate support to spray de-ionized water droplets. The nozzle is coupled to a source of de-ionized water and a source of nitrogen. The nozzle is configured to mix the de-ionized water and the nitrogen outside the nozzle to have independent flow rate control of the two fluids for an optimized atomization in terms of spray uniformity in droplet size and velocity distributions. The nozzle to wafer distance can be adjusted and tuned to have an optimized jet spray for efficiently removing particles or contaminants from a surface of a wafer without causing any feature damage.

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