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Bo L Xie, 534974 Kenson Dr, San Jose, CA 95124

Known as:
Bo Xia Xie Bu
Related to:
Changqing Xie 61

Bo Xie Phones & Addresses

4974 Kenson Dr, San Jose, CA 95124    408-5078739   

Santa Clara, CA   

925 Wolfe Rd, Sunnyvale, CA 94086   

1300 Fort Lowell Rd, Tucson, AZ 85719    520-3277060   

951 10Th St, Tucson, AZ 85719    520-7924463   

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Bo L Xie

Linkedin

Work

Company: Applied materials Sep 2005 to Jul 2007 Position: Process engineer

Education

Degree: Doctorates, Doctor of Philosophy School / High School: University of Arizona 2000 to 2005 Specialities: Chemical Engineering

Skills

Cvd • Metrology • Semiconductor Industry • Silicon • Wet Clean • Post Cmp Clean • Low K Film Repair • Pore Sealing

Languages

English

Industries

Semiconductors
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Bo Xie resumes & CV records

Resumes

Bo Xie Photo 26

Senior Process Engineer

Location:
4974 Kenson Dr, San Jose, CA 95124
Industry:
Semiconductors
Work:
Applied Materials Sep 2005 - Jul 2007
Process Engineer Applied Materials Sep 2005 - Jul 2007
Senior Process Engineer
Education:
University of Arizona 2000 - 2005
Doctorates, Doctor of Philosophy, Chemical Engineering South China University of Technology
Skills:
Cvd, Metrology, Semiconductor Industry, Silicon, Wet Clean, Post Cmp Clean, Low K Film Repair, Pore Sealing
Languages:
English

Publications & IP owners

Us Patents

Frontside Structure Damage Protected Megasonics Clean

US Patent:
7682457, Mar 23, 2010
Filed:
Oct 4, 2007
Appl. No.:
11/973039
Inventors:
Zhiyong Li - San Jose CA, US
Jianshe Tang - San Jose CA, US
Bo Xie - Sunnyvale CA, US
Wei Lu - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B08B 3/12
US Classification:
134 1, 134 13, 134 2, 134 3, 134 26, 134 28, 134 32, 134 33, 134 34, 134 36, 134 40, 134 41, 134 42, 134902
Abstract:
An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.

Dielectric Recovery Of Plasma Damaged Low-K Films By Uv-Assisted Photochemical Deposition

US Patent:
8216861, Jul 10, 2012
Filed:
Jun 28, 2011
Appl. No.:
13/171132
Inventors:
Kang Sub Yim - Palo Alto CA, US
Thomas Nowak - Cupertino CA, US
Bo Xie - Santa Clara CA, US
Alexandros T. Demos - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/00
US Classification:
438 4, 438778, 257E21471
Abstract:
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

Microelectronic Structure Including A Low K Dielectric And A Method Of Controlling Carbon Distribution In The Structure

US Patent:
8349746, Jan 8, 2013
Filed:
Feb 23, 2010
Appl. No.:
12/660294
Inventors:
Bo Xie - Sunnyvale CA, US
Alexandros T. Demos - Fremont CA, US
Daemian Raj - San Jose CA, US
Sure Ngo - Dublin CA, US
Kang Sub Yim - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/469
US Classification:
438787, 257635, 257632, 257751, 257E21277, 257E23002, 438761, 438783, 438643, 438786, 438778
Abstract:
Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2. 6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.

Uv Assisted Silylation For Recovery And Pore Sealing Of Damaged Low K Films

US Patent:
8492170, Jul 23, 2013
Filed:
Apr 25, 2011
Appl. No.:
13/093351
Inventors:
Bo Xie - Santa Clara CA, US
Alexandros T. Demos - Fremont CA, US
Kang Sub Yim - Palo Alto CA, US
Thomas Nowak - Cupertino CA, US
Kelvin Chan - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/30
US Classification:
438 4, 438597, 438795
Abstract:
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

Methods And Apparatus For Cleaning A Substrate

US Patent:
2007023, Oct 11, 2007
Filed:
Mar 23, 2007
Appl. No.:
11/690621
Inventors:
WEI LU - Fremont CA, US
Jianshe Tang - San Jose CA, US
Alexander Ko - Santa Clara CA, US
Nelson Yee - Redwood City CA, US
Bo Xie - Sunnyvale CA, US
John Lee - San Jose CA, US
Richard Endo - San Carlos CA, US
International Classification:
B05C 5/00
US Classification:
118300000, 134172000
Abstract:
The present invention provides methods, apparatus, and systems for cleaning a substrate that include a controller and a nozzle coupled to the controller. The controller is adapted to direct the nozzle to dispense a uniform fluid spray pattern onto a substrate. The controller is adapted create the uniform fluid spray pattern by adjusting at least one operational parameter of the nozzle to cause a predefined percentage of droplets to be within a predetermined size range. Numerous other aspects are disclosed.

Methods And Apparatus For Cleaning A Substrate

US Patent:
2007024, Oct 25, 2007
Filed:
Mar 23, 2007
Appl. No.:
11/690628
Inventors:
Wei Lu - Fremont CA, US
Jianshe Tang - San Jose CA, US
Alexander Ko - Santa Clara CA, US
Nelson Yee - Redwood City CA, US
Bo Xie - Sunnyvale CA, US
John Lee - San Jose CA, US
Rick Endo - San Carlos CA, US
International Classification:
B08B 3/00
B08B 7/00
US Classification:
134033000, 134034000, 134026000
Abstract:
The present invention provides methods, apparatus, and systems for cleaning a substrate that include a controller and a nozzle coupled to the controller. The controller is adapted to direct the nozzle to dispense a uniform fluid spray pattern onto a substrate. The controller is adapted create the uniform fluid spray pattern by adjusting at least one operational parameter of the nozzle to cause a predefined percentage of droplets to be within a predetermined size range. Numerous other aspects are disclosed.

Semiconductor Substrate Cleaning Apparatus

US Patent:
2008005, Mar 6, 2008
Filed:
Aug 9, 2007
Appl. No.:
11/891339
Inventors:
Jianshe Tang - San Jose CA, US
Wei Lu - Fremont CA, US
Zhiyong Li - Santa Clara CA, US
Bo Xie - Sunnyvale CA, US
Alexander Ko - Santa Clara CA, US
International Classification:
B08B 3/02
US Classification:
134028000, 134198000, 134026000
Abstract:
A semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The semiconductor substrate processing apparatus may include a liquid container where a semiconductor substrate may be immersed in a semiconductor processing liquid. The semiconductor substrate may then be removed from the semiconductor processing liquid while vapor is directed at a surface of the semiconductor substrate where the semiconductor substrate contacts a surface of the processing liquid.

Method And Apparatus Of Multi Steps Atomization For Generating Smaller Diw Dropplets For Wafer Cleaning

US Patent:
2008016, Jul 10, 2008
Filed:
Jan 10, 2007
Appl. No.:
11/621855
Inventors:
JIANSHE TANG - San Jose CA, US
Wei Lu - Fremont CA, US
Bo Xie - Sunnyvale CA, US
Elias Martinez - Belmont CA, US
Zhiyong Li - San Jose CA, US
Kent Child - Los Banos CA, US
Richard Endo - San Carlos CA, US
Konstantin Smekalin - Pleasanton CA, US
International Classification:
B08B 3/00
US Classification:
134 13, 134198
Abstract:
An apparatus for cleaning a wafer has a first chamber and a component coupled to the first chamber. The first chamber has a first input to form de-ionized water droplets. The component is coupled to the first chamber to further atomize and apply the atomized de-ionized water droplets on the wafer.

Possible Relatives

Dangen Xie  Darren L Xie  Dong L Xie  Fei Xie  Feng Xie  George G Xie  Gong H Xie  Bo Johnson  Bo D White  Bo U Jun 

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