Brian E Bolf, 512768 Collingwood St SE, Albany, OR 97322
Brian Bolf Phones & Addresses
2768 Collingwood St SE, Albany, OR 97322 541-9081719
4134 Cordova Pl SE, Albany, OR 97321
2856 Raleigh Ct SE, Albany, OR 97321
Corvallis, OR
Lebanon, OR
2768 Collingwood St SE, Albany, OR 97322
Mentions for Brian E Bolf
Publications & IP owners
Us Patents
Method Of Making A Tunneling Emitter
US Patent:
7044823, May 16, 2006
Filed:
May 18, 2004
Appl. No.:
10/848695
Inventors:
Zhizhang Chen - Corvallis OR, US
Michael J. Regan - Corvallis OR, US
Brian E Bolf - Albany OR, US
Thomas Novet - Corvallis OR, US
Paul J. Benning - Lexington MA, US
Mark Alan Johnstone - Lebanon OR, US
Sriram Ramamoorthi - Corvallis OR, US
Michael J. Regan - Corvallis OR, US
Brian E Bolf - Albany OR, US
Thomas Novet - Corvallis OR, US
Paul J. Benning - Lexington MA, US
Mark Alan Johnstone - Lebanon OR, US
Sriram Ramamoorthi - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01J 9/02
H01L 29/06
H01L 29/06
US Classification:
445 50, 445 51, 313309, 313495, 257 10, 438 20
Abstract:
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
Annealed Tunneling Emitter
US Patent:
2002016, Nov 14, 2002
Filed:
Apr 30, 2001
Appl. No.:
09/846127
Inventors:
Zhizhang Chen - Corvallis OR, US
Michael Regan - Corvallis OR, US
Brian Bolf - Albany OR, US
Thomas Novet - Corvallis OR, US
Paul Benning - Corvallis OR, US
Mark Johnstone - Lebanon OR, US
Sriram Ramamoorthi - Corvallis OR, US
Michael Regan - Corvallis OR, US
Brian Bolf - Albany OR, US
Thomas Novet - Corvallis OR, US
Paul Benning - Corvallis OR, US
Mark Johnstone - Lebanon OR, US
Sriram Ramamoorthi - Corvallis OR, US
International Classification:
H01L029/06
H01L021/00
H01L029/12
H01L021/00
H01L029/12
US Classification:
257/010000, 257/163000, 438/020000
Abstract:
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
Tunneling Emitter
US Patent:
2004022, Nov 11, 2004
Filed:
May 18, 2004
Appl. No.:
10/848754
Inventors:
Zhizhang Chen - Corvallis OR, US
Michael Regan - Corvallis OR, US
Brian Bolf - Albany OR, US
Thomas Novet - Corvallis OR, US
Paul Benning - Lexington MA, US
Mark Johnstone - Lebanon OR, US
Sriram Ramamoorthi - Corvallis OR, US
Michael Regan - Corvallis OR, US
Brian Bolf - Albany OR, US
Thomas Novet - Corvallis OR, US
Paul Benning - Lexington MA, US
Mark Johnstone - Lebanon OR, US
Sriram Ramamoorthi - Corvallis OR, US
International Classification:
H01L029/06
H01L031/0336
H01J001/02
H01L031/0336
H01J001/02
US Classification:
313/309000, 257/010000, 257/019000, 257/163000
Abstract:
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
Three-Dimensional Printing
US Patent:
2021028, Sep 16, 2021
Filed:
Oct 26, 2018
Appl. No.:
17/256928
Inventors:
- Spring TX, US
Todd A. Berdahl - Corvallis OR, US
Michael D. Long - Vancouver WA, US
Brian E. Bolf - Corvallis OR, US
Ashley Diane Mason - Corvallis OR, US
Luke Bockman - Vancouver WA, US
Todd A. Berdahl - Corvallis OR, US
Michael D. Long - Vancouver WA, US
Brian E. Bolf - Corvallis OR, US
Ashley Diane Mason - Corvallis OR, US
Luke Bockman - Vancouver WA, US
International Classification:
B29C 64/153
B29C 64/214
B29C 64/218
B29C 64/245
B33Y 10/00
B33Y 30/00
B33Y 70/00
B29C 64/214
B29C 64/218
B29C 64/245
B33Y 10/00
B33Y 30/00
B33Y 70/00
Abstract:
An example build material spreader for a three-dimensional (3D) object printer has a spreader surface to contact a build material and spread the build material in a build material layer by translating the build material spreader through a bed of the build material to shear the build material and form a smooth exposed surface of the build material layer. The spreader surface has a surface energy less than a maximum surface energy.
Amorphous Thin Metal Film Coated Substrates
US Patent:
2019034, Nov 14, 2019
Filed:
Jan 31, 2017
Appl. No.:
16/343484
Inventors:
- Spring TX, US
Brian E Bolf - Corvallis OR, US
Paul K Krause - Corvallis OR, US
David Volbeda - Corvallis OR, US
Brian E Bolf - Corvallis OR, US
Paul K Krause - Corvallis OR, US
David Volbeda - Corvallis OR, US
Assignee:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. - Spring TX
International Classification:
C22C 45/10
C22C 27/02
B41J 2/16
C08L 63/00
C22C 27/02
B41J 2/16
C08L 63/00
Abstract:
The present disclosure is drawn to an amorphous thin metal film coated substrate including a crosslinked polymer substrate and a 10 angstrom nm to 10 μm amorphous thin metal film applied directly to the crosslinked polymer substrate. The amorphous thin metal film can include from 10 at % to 50 at % of a metalloid, wherein the metalloid is carbon, silicon, boron, or a mixture thereof. The film can also include from 5 at % to 70 at % of a first metal and 5 at % to 70 at % of a second metal. The first and the second metal can be, independently, titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum. The first metal and the second metal can also be from different periods of the periodic table of elements.
Energy Efficient Printheads
US Patent:
2018028, Oct 4, 2018
Filed:
Jan 20, 2016
Appl. No.:
15/765255
Inventors:
- Houston TX, US
Mohammed Shaarawi - Corvallis OR, US
Brian Bolf - Corvallis OR, US
Paul Krause - Corvallis OR, US
Mohammed Shaarawi - Corvallis OR, US
Brian Bolf - Corvallis OR, US
Paul Krause - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
B41J 2/175
B41J 2/14
B41J 2/16
B41J 2/335
B41J 2/14
B41J 2/16
B41J 2/335
Abstract:
Energy efficient printheads are disclosed. An example printhead includes a substrate with channels to direct ink toward a plurality of nozzles of the printhead. The example printhead further includes a passivation layer on the substrate. The passivation layer includes a first thin film of a first dielectric material formed using atomic layer deposition.
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