Carl W Almgren, 662925 Garrett Dr, Fort Collins, CO 80526

6902646, Jun 7, 2005

Aug 14, 2003

10/640892

Leonard J. Mahoney - Fort Collins CO, US
Carl W. Almgren - Fort Collins CO, US
Gregory A. Roche - Fort Collins CO, US
William W. Saylor - Windsor CO, US
William D. Sproul - Fort Collins CO, US
Hendrik V. Walde - Fort Collins CO, US

Advanced Energy Industries, Inc. - Fort Collins CO

H05H001/00
C23C016/00
H01L021/00

15634524, 15634528, 118712, 438710, 438 5

A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

8545669, Oct 1, 2013

Feb 25, 2005

11/066520

Leonard J. Mahoney - Fort Collins CO, US
Carl W. Almgren - Fort Collins CO, US
Gregory A. Roche - Fort Collins CO, US
William W. Saylor - Windsor CO, US
William D. Sproul - Fort Collins CO, US
Hendrik V. Walde - Fort Collins CO, US

KLA-Tencor Corporation - San Jose CA

H01L 21/306
C23F 1/00

15634524, 15634525, 15634526, 216 69, 438 7

A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

2012005, Mar 1, 2012

Aug 25, 2010

12/862914

Joe D. Sartor - Longmont CO, US
Carl W. Almgren - Fort Collins CO, US

A61B 18/18

606 41

A system and method for convectively heating tissue to smooth the surface of the tissue. A fluid, such as saline is distributed across a tissue surface. A bipolar tool is placed within the fluid, but not touching the tissue. An RF signal is sent from a generator through the electrodes to rapidly boil the fluid. Heat is then transferred from the boiling fluid to the tissue resulting in minimal heat damage to tissue. An impedance matching system is used to maximize power received at the bipolar from the generator. Additionally, a control system monitors the boiling fluid to limit arcing.

5976309, Nov 2, 1999

Dec 17, 1996

8/767698

Carl W. Almgren - Fort Collins CO

LSI Logic Corporation - Milpitas CA

H05H 100

156345

An electrode assembly for a plasma reactor used in connection with fabrication or manufacture of semiconductor devices. The electrode assembly includes an anode having, a top side that includes a pedestal adapted to support a wafer and defines an annular void that preferably surrounds the pedestal and extends to an outer periphery of the top side. The electrode assembly also includes a ring removably received within the annular void so that the ring extends from the pedestal and covers substantially the entire portion of the top side of the anode save the pedestal. The thickness of the ring is slightly less than the height of the pedestal so that the top surface of the ring is located below the top surface of the pedestal. When the wafer is supported by the pedestal during fabrication of a semiconductor device, the wafer extends beyond the circumference of the pedestal, and a gap is defined between the wafer and the removable ring. The removable ring can be quickly and easily removed and replaced.

2014022, Aug 14, 2014

Jan 27, 2014

14/164785

- Fort Collins CO, US
IL-GYO KOO - Daegu, KR
HEESANG YOUN - Cheonan City, KR
MYEONG YEOL CHOI - Fort Collins CO, US
CARL W. ALMGREN - Fort Collins CO, US

Colorado State University Research Foundation - Fort Collins CO

H05H 1/24

204164, 422186

A plasma system is disclosed. The system includes: a plasma device including at least one electrode; an ionizable media source coupled to the plasma device and configured to supply ionizable media thereto; a precursor source configured to supply at least one precursor feedstock to the plasma device, wherein the at least one precursor feedstock includes at least one catalyst material; and a power source coupled to the inner and outer electrodes and configured to ignite the ionizable media and the at least one precursor feedstock at the plasma device to form a plasma effluent.

2014016, Jun 12, 2014

Jul 18, 2013

13/945756

- Santa Clara CA, US
Robert Chebi - San Carlos CA, US
Carl Almgren - Fort Collins CO, US

APPLIED MATERIALS INC. - Santa Clara CA

H01L 21/67
H01L 21/3065

438711, 15634544, 15634528

A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a “short” at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode.