Carl A Treadwell, 591990 Avy Ave, Menlo Park, CA 94025

6538730, Mar 25, 2003

Apr 6, 2001

09/828269

Mehdi Vaez-Iravani - Los Gatos CA
Jeffrey Alan Rzepiela - Sunnyvale CA
Carl Treadwell - Menlo Park CA
Andrew Zeng - Milpitas CA
Robert Fiordalice - Austin TX

Kla-Tencor Technologies Corporation - Milpitas CA

G01N 2100

3562372, 3562374, 3562375

Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles.

6862096, Mar 1, 2005

Feb 6, 2003

10/360565

Mehdi Vaez-Iravani - Los Gatos CA, US
Jeffrey Alan Rzepiela - Sunnyvale CA, US
Carl Treadwell - Menlo Park CA, US
Andrew Zeng - Milpitas CA, US
Robert Fiordalice - Austin TX, US

KLA-Tencor Corporation - Milpitas CA

G01B011/30

356600, 3562434

Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles.

2005001, Jan 27, 2005

Aug 16, 2004

10/919600

Mehdi Vaez-Iravani - Los Gatos CA, US
Jeffrey Rzepiela - Sunnyvale CA, US
Carl Treadwell - Menlo Park CA, US
Andrew Zeng - Milpitas CA, US
Robert Fiordalice - Austin TX, US

G01N021/00

356237100, 356237400

Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so- that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles. Intensity of scattering is measured when the surface is illuminated sequentially by S- and P-polarized radiation and compared to distinguish between micro-scratches and particles. Representative films may be measured using profilometers or scanning probe microscopes to determine their roughness and by the above-described instruments to determine haze in order to build a database. Surface roughness of unknown films may then be determined by measuring haze values and from the database.

2011000, Jan 13, 2011

Jun 17, 2010

12/817499

KEVIN LAUGHTON CUNNINGHAM - Mountain View CA, US
Carl Treadwell - Menlo Park CA, US
Tzay-Fa Su - San Jose CA, US
Uday Mahajan - Santa Clara CA, US
Sarin Sundar Jainnagar Kuppuswamy - Hyderabad, IN

APPLIED MATERIALS, INC. - Santa Clara CA

H01L 21/78
B23K 26/00

438463, 21912168, 257E21599

Embodiments of the present invention generally relate to a system used to form solar cell devices using processing modules adapted to perform one or more processes in the formation of the solar cell devices. In one embodiment, the system is adapted to form thin film solar cell devices by accepting a large unprocessed substrate and performing multiple deposition, material removal, cleaning, bonding, testing, and sectioning processes to form one or more complete, functional, and tested solar cell devices in custom sizes and/or shapes that can then be shipped to an end user for installation in a desired location to generate electricity. In one embodiment, the system is adapted to form one or more BIPV panels in custom sizes and/or shapes from a single large substrate for shipment to an end user.

6177143, Jan 23, 2001

Jan 6, 1999

9/226347

Carl Treadwell - Palo Alto CA
Jingjun Yang - Cupertino CA
Matthew Ross - San Diego CA

C08F 248
C08J 704
H01L 5140

427515

Electron beam cured siloxane dielectric films and to a process for their manufacture which are useful in the production of integrated circuits. A siloxane polymer having in one aspect less than 40 Mole percent carbon containing substituents, and in another aspect at least approximately 40 Mole percent carbon containing substituents is cured by a wide beam electron beam exposure.