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Charles A Valverde, 53Waterbury, CT

Known as:
Charles A Valuerde Charlie Valberde
Related to:
Jessika L Dacosta 39

Charles Valverde Phones & Addresses

Waterbury, CT   

Storrs Mansfield, CT   

147 Division St, Ansonia, CT 06401    203-7360814   

Derby, CT   

Shelton, CT   

147 Division St, Ansonia, CT 06401    203-2313682   

Social networks

Charles A Valverde

Linkedin

Work

Company: Pwc llp 2011 Position: Experienced tax associate

Education

School / High School: University of New Haven- West Haven, CT 2009 Specialities: Bachelor of Science in Accounting

Skills

Tax • Corporate Tax • Fatca • Income Tax

Languages

English • Spanish

Emails

c***[email protected]

Industries

Financial Services
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Mentions for Charles A Valverde

Resumes & CV records

Resumes

Charles Valverde Photo 24

Charles Valverde

Location:
2 Park Ave, New York, NY 10016
Industry:
Financial Services
Work:
Pwc Aug 2011 - Sep 2014
Tax The Hartford Aug 2011 - Sep 2014
Tax Morgan Stanley Apr 2014 - Jun 2014
Tax Consultant-Fatca Citi Aug 2011 - Dec 2011
Advisory-Occ and Us Treasury Foreclosure Review Espn 2011 - 2011
Tax Compliance Analyst
Education:
University of New Haven 2011
Master of Science, Masters University of New Haven 2009
Bachelors, Bachelor of Science University of New Haven 2007 - 2009
Bachelor of Science In Chemistry, Bachelors, Bachelor of Science, Accounting, Finance Waterbury State Technical College 2001
Shelton High School
Skills:
Tax, Corporate Tax, Fatca, Income Tax
Languages:
English
Spanish
Charles Valverde Photo 25

Charles Valverde - Waterbury, CT

Work:
PWC LLP 2011 to 2000
Experienced Tax Associate ESPN, INC - Bristol, CT 2011 to 2011
A Walt Disney affiliated Company and leader REYNOLDS AND ROWELLA, LLP - Ridgefield, CT 2008 to 2010
Accounting Associate COOKSON ELECTRONICS - West Haven, CT 2003 to 2008
Technical Associate
Education:
University of New Haven - West Haven, CT 2009
Bachelor of Science in Accounting Waterbury State Technical College - Waterbury, CT 2001
Associate of Science in Chemical Engineering Technology University of New Haven - West Haven, CT
Master of Science in Taxation

Publications & IP owners

Us Patents

Defectivity And Process Control Of Electroless Deposition In Microelectronics Applications

US Patent:
7410899, Aug 12, 2008
Filed:
Sep 20, 2005
Appl. No.:
11/230912
Inventors:
Qingyun Chen - Branford CT, US
Charles Valverde - Ansonia CT, US
Vincent Paneccasio - Madison CT, US
Nicolai Petrov - Hamden CT, US
Daniel Stritch - West Haven CT, US
Christian Witt - Woodbridge CT, US
Richard Hurtubise - Clinton CT, US
Assignee:
Enthone, Inc. - West Haven CT
International Classification:
H01L 21/3205
US Classification:
438678, 438761, 438776, 438782, 257635, 257766, 20415745, 2041575, 204633
Abstract:
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Defectivity And Process Control Of Electroless Deposition In Microelectronics Applications

US Patent:
7611987, Nov 3, 2009
Filed:
Oct 5, 2005
Appl. No.:
11/243624
Inventors:
Qingyun Chen - Branford CT, US
Charles Valverde - Ansonia CT, US
Vincent Paneccasio - Madison CT, US
Nicolai Petrov - Hamden CT, US
Daniel Stritch - West Haven CT, US
Christian Witt - Woodbridge CT, US
Richard Hurtubise - Clinton CT, US
Assignee:
Enthone Inc. - West Haven CT
International Classification:
H01L 21/44
US Classification:
438678, 438761, 438778, 438782, 257635, 257766, 20415745, 2041575, 204633
Abstract:
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Defectivity And Process Control Of Electroless Deposition In Microelectronics Applications

US Patent:
7611988, Nov 3, 2009
Filed:
Oct 5, 2005
Appl. No.:
11/243631
Inventors:
Qingyun Chen - Branford CT, US
Charles Valverde - Ansonia CT, US
Vincent Paneccasio - Madison CT, US
Nicolai Petrov - Hamden CT, US
Daniel Stritch - West Haven CT, US
Christian Witt - Woodbridge CT, US
Richard Hurtubise - Clinton CT, US
Assignee:
Enthone Inc. - West Haven CT
International Classification:
H01L 21/44
US Classification:
438678, 438761, 438778, 438782, 257635, 257766, 20415745, 2041575, 204633
Abstract:
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Defectivity And Process Control Of Electroless Deposition In Microelectronics Applications

US Patent:
7615491, Nov 10, 2009
Filed:
Oct 5, 2005
Appl. No.:
11/243876
Inventors:
Qingyun Chen - Branford CT, US
Charles Valverde - Ansonia CT, US
Vincent Paneccasio - Madison CT, US
Nicolai Petrov - Hamden CT, US
Daniel Stritch - West Haven CT, US
Christian Witt - Woodbridge CT, US
Richard Hurtubise - Clinton CT, US
Assignee:
Enthone Inc. - West Haven CT
International Classification:
H01L 21/44
US Classification:
438678, 438761, 438778, 438782, 25251914, 2525204, 2525214, 257635, 257766
Abstract:
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Manufacture Of Electroless Cobalt Deposition Compositions For Microelectronics Applications

US Patent:
7704306, Apr 27, 2010
Filed:
Oct 16, 2006
Appl. No.:
11/549775
Inventors:
Qingyun Chen - Branford CT, US
Richard Hurtubise - Clinton CT, US
Vincent Paneccasio - Madison CT, US
Charles Valverde - Ansonia CT, US
Daniel Stritch - West Haven CT, US
Assignee:
Enthone Inc. - West Haven CT
International Classification:
C23C 18/34
C23C 18/36
US Classification:
106 122, 106 127
Abstract:
A method of preparing an aqueous electroless deposition composition for electrolessly depositing Co or a Co alloy onto a substrate in manufacture of microelectronic devices by treating water or an aqueous electroless deposition composition with a deoxygenating treatment to reduce the oxygen concentration.

Cobalt And Nickel Electroless Plating In Microelectronic Devices

US Patent:
2006008, Apr 20, 2006
Filed:
Mar 21, 2005
Appl. No.:
11/085304
Inventors:
Charles Valverde - Ansonia CT, US
Nicolai Petrov - Hamden CT, US
Eric Yakobson - Aliso Viejo CA, US
Qingyun Chen - Branford CT, US
Vincent Paneccasio - Madison CT, US
Richard Hurtubise - Clinton CT, US
Christian Witt - Woodbridge CT, US
Assignee:
Enthone Inc. - West Haven CT
International Classification:
B05D 5/12
B05D 1/18
C23C 18/34
C23C 18/36
US Classification:
427058000, 427099500, 427437000, 427443100, 106001220, 106001270
Abstract:
An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.

Cobalt Self-Initiated Electroless Via Fill For Stacked Memory Cells

US Patent:
2006018, Aug 24, 2006
Filed:
Feb 23, 2005
Appl. No.:
11/063624
Inventors:
Qingyun Chen - Branford CT, US
Richard Hurtubise - Clinton CT, US
Christian Witt - Woodbridge CT, US
Joseph Abys - Warren NJ, US
Daniel Stritch - Dunbury CT, US
Charles Valverde - Ansonia CT, US
Assignee:
Enthone Inc. - West Haven CT
International Classification:
B05D 1/18
US Classification:
427437000, 427443100
Abstract:
A method for electrolessly filling a stacked memory cell interconnect feature comprising electroless deposition from a composition comprising Co ions and a reducing agent by bottom-up filling initiated by reduction to Co metal on an electrically conducting bottom of the feature. An electroless deposition composition for electrolessly depositing Co in a high aspect ratio stacked memory cell interconnect feature, the composition comprising water, Co ions, a complexing agent, a buffering agent, a borane-based reducing agent component, and a hypophosphite reducing agent component. There is a concentration ratio of borane-based reducing agent to hypophosphite reducing agent of less than about 0.5.

Cobalt Electroless Plating In Microelectronic Devices

US Patent:
2006028, Dec 14, 2006
Filed:
Jun 9, 2005
Appl. No.:
11/148724
Inventors:
Vincent Paneccasio - Madison CT, US
Qingyun Chen - Branford CT, US
Charles Valverde - Ansonia CT, US
Nicolai Petrov - Hamden CT, US
Christian Witt - Woodbridge CT, US
Richard Hurtubise - Clinton CT, US
Assignee:
Enthone Inc. - West Haven CT
International Classification:
B05D 5/12
C23C 18/34
C23C 18/36
US Classification:
427099500, 106001220, 106001270
Abstract:
An electroless plating method and composition for depositing Co or Co alloys onto a metal-based substrate in manufacture of microelectronic devices, involving a source of Co ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and an oxime-based compound stabilizer.

Possible Relatives

Cynthia Valverde  David A Valverde  Debbie Valverde  Daniel R Valverde  Danny Valverde  Dennis D Valverde  Dolores H Valverde  Charles W Johnson  Charles L Stamps  Charles J Stancil 

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