BackgroundCheck.run
Search For

Chee Wai Wong, 60New Hyde Park, NY

Chee Wong Phones & Addresses

New Hyde Park, NY   

110 Clara St, Brooklyn, NY 11218    718-4387356   

New York, NY   

Williston Park, NY   

Forest Hills, NY   

Milwaukee, WI   

Mentions for Chee Wai Wong

Career records & work history

License Records

Chee Man Wong

Address:
43-09 64 St, Flushing, NY
Licenses:
License #: EI.0012574 - Expired
Category: Civil Engineer
Issued Date: Jan 1, 1900

Chee Wong resumes & CV records

Resumes

Chee Wong Photo 40

Chee Jong Wong

Chee Wong Photo 41

Chee Yong Wong

Chee Wong Photo 42

Chee Ming Wong

Chee Wong Photo 43

Chee Hong Wong

Chee Wong Photo 44

Chee Keong Wong

Chee Wong Photo 45

Chee Keen Wong

Chee Wong Photo 46

Chee Wai Wong

Chee Wong Photo 47

Chee Wong

Publications & IP owners

Us Patents

Light Emission Using Quantum Dot Emitters In A Photonic Crystal

US Patent:
7346251, Mar 18, 2008
Filed:
Apr 18, 2006
Appl. No.:
11/405732
Inventors:
Ranojoy Bose - Flushing NY, US
Chee Wei Wong - New York NY, US
Xiaodong Yang - New York NY, US
Assignee:
The Trustees of Columbia University in the City of New York - New York NY
International Classification:
G02B 6/10
US Classification:
385129, 359332
Abstract:
Devices and methods of manufacturing; for emitting substantially white light using a photonic crystal are described. The photonic crystal has a lattice of air holes and is made from a substrate containing quantum dots. The substrate is etched with three defects that are optically coupled together so that each emits only certain frequencies of light. In combination, the defects can produce substantially white light. The parameters of the photonic crystal are dimensioned so as to cause the coupling between the defects to produce substantially white light.

Hitless Switch For High-Density Integrated Optics

US Patent:
7424181, Sep 9, 2008
Filed:
Jan 24, 2005
Appl. No.:
11/041350
Inventors:
Milos Popovic - Richmond Hill, CA
Michael R. Watts - Hingham MA, US
Chee Wei Wong - New York NY, US
Lionel C. Kimerling - Concord MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
G02B 6/12
US Classification:
385 16, 385 15, 385 17
Abstract:
An optical device includes a first and a second splitting device. Each of the first and second splitting devices have respective first and second input ports, respective first and second output ports, and a respective transfer matrix. A first optical waveguide is optically coupled to the first output port of the first splitting device and the first input port of the second splitting device. A second optical waveguide is optically coupled to the second output port of the first splitting device and the second input port of the second splitting device. The first and second optical waveguides are configured to introduce a phase shift of π radians to the optical radiation propagating through the first optical waveguide with respect to the optical radiation propagating through the second optical waveguide. The transfer matrix of the second splitting device is the diagonal transpose of the transfer matrix of the first splitting device and the transfer matrix of the second splitting device is substantially different from the transfer matrix of the first splitting device.

Integrated Polarization Controllers With Nano-Electromechanical Dielectric Pertubation

US Patent:
7466878, Dec 16, 2008
Filed:
Feb 10, 2006
Appl. No.:
11/351725
Inventors:
Poh-Boon Phua - Singapore, SG
Chee Wei Wong - New York NY, US
Erich P. Ippen - Belmont MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
G02B 6/00
US Classification:
385 11, 385 6, 385 8, 359251, 359281, 359283, 359301, 359302, 359303, 359304, 359352, 359483
Abstract:
A polarization controller includes a phase retarder having a rotation about an {1,0,0} axis that receives an optical signal from a waveguide structure. At least one nanoelectromechanical dielectric perturber produces 45 birefringent axes by placing the at least one nanoelectromechanical dielectric perturber at selective positions around the phase retarder to produce dynamic change in the effective index in one of the modes existent in an extraordinary axial direction.

All-Silicon Raman Amplifiers And Lasers Based On Micro Ring Resonators

US Patent:
7532656, May 12, 2009
Filed:
Feb 15, 2006
Appl. No.:
11/354725
Inventors:
Xiaodong Yang - New York NY, US
Chee Wei Wong - New York NY, US
Assignee:
The Trustees of Columbia University in the City of New York - New York NY
International Classification:
H01S 3/083
US Classification:
372 94, 372 30, 372 66
Abstract:
Devices for generating a laser beam are disclosed. The devices include a silicon micro ring having at least one silicon optical waveguide disposed at a distance from the micro ring. The radius and the cross-sectional dimension of the microring, the cross-sectional dimension of the waveguide, and the distance between the micro ring and the waveguide are determined such that one or more pairs of whispering gallery mode resonant frequencies of the micro ring are separated by an optical phonon frequency of silicon. Methods of manufacturing a lasing device including a silicon micro ring coupled with a silicon waveguide are also disclosed.

Ultrafast Ge/Si Resonator-Based Modulators For Optical Data Communications In Silicon Photonics

US Patent:
7840099, Nov 23, 2010
Filed:
Jan 18, 2007
Appl. No.:
11/624357
Inventors:
Dong Pan - Andover MA, US
Jifeng Liu - Cambridge MA, US
Lionel C. Kimerling - Concord MA, US
James F. McMillan - New York NY, US
Michael D. Sockin - New York NY, US
Chee Wei Wong - New York NY, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
G02F 1/01
G02F 1/295
US Classification:
385 1, 385 4, 385 9
Abstract:
An optical modulator structure includes at least two waveguide structures for inputting and outputting an optical signal. At least one ring resonator structure provides coupling between the at least two waveguide structures. The at least one ring resonator structure includes Ge or SiGe.

Systems And Methods For Sensing Properties Of A Workpiece And Embedding A Photonic Sensor In Metal

US Patent:
7840101, Nov 23, 2010
Filed:
Jan 3, 2007
Appl. No.:
12/160043
Inventors:
Chee Wei Wong - New York NY, US
Rohit Chatterjee - Chennai, IN
Xiaochun Li - Madison WI, US
Xugang Zhang - Milwaukee WI, US
Assignee:
The Trustees of Columbia University in the City of New York - New York NY
International Classification:
G02B 6/00
G01N 21/00
US Classification:
385 12, 385 13, 3562438, 398 33, 398 82
Abstract:
Systems and methods for sensing properties of a workpiece and embedding a photonic sensor in metal are disclosed herein. In some embodiments, systems for sensing properties of a workpiece include an optical input, a photonic device, an optical detector, and a digital processing device. The optical input provides an optical signal at an output of the optical input. The photonic device is coupled to the workpiece and to the output of the optical input. The photonic device generates an output signal in response to the optical signal, wherein at least one of an intensity of the output signal and a wavelength of the output signal depends on at least one of thermal characteristics and mechanical characteristics of the workpiece. The optical detector receives the output signal from the photonic device and is configured to generate a corresponding electronic signal. The digital processing device is coupled to the optical detector and determines at least one of the thermal characteristics and mechanical the characteristics of the workpiece based on the electronic signal.

Devices And Methods For Providing Stimulated Raman Lasing

US Patent:
7869470, Jan 11, 2011
Filed:
Aug 31, 2006
Appl. No.:
12/065406
Inventors:
Chee Wei Wong - New York NY, US
James F. McMillan - New York NY, US
Xiaodong Yang - New York NY, US
Richard Osgood, Jr. - Chappaqua NY, US
Jerry Dadap - Red Bank NJ, US
Nicolae C. Panoiu - Barnet, GB
Assignee:
The Trustees of Columbia University in the City of New York - New York NY
International Classification:
H01S 3/30
US Classification:
372 3
Abstract:
Devices and methods for providing stimulated Raman lasing are provided. In some embodiments, devices include a photonic crystal that includes a layer of silicon having a lattice of holes and a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing. In some embodiments, methods include forming a layer of silicon, and etching the layer of silicon to form a lattice of holes with a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing.

All-Silicon Raman Amplifiers And Lasers Based On Micro Ring Resonators

US Patent:
8017419, Sep 13, 2011
Filed:
Feb 25, 2009
Appl. No.:
12/392634
Inventors:
Xiaodong Yang - New York NY, US
Chee Wei Wong - New York NY, US
Assignee:
The Trustees of Columbia University in the City of New York - New York NY
International Classification:
H01L 21/00
H01S 3/083
US Classification:
438 31, 438 29, 438 32, 372 94
Abstract:
Methods of manufacturing a lasing device are provided by some embodiments, the methods including: creating a silicon micro ring with a predetermined radius and a predetermined first cross-sectional dimension; creating a silicon waveguide with a predetermined second cross-sectional dimension, the silicon waveguide spaced from the silicon micro ring by a predetermined distance; and wherein the predetermined distance, the predetermined radius, the predetermined first cross-sectional dimension, and the predetermined second cross-sectional dimension are determined so that at least one first whispering gallery mode resonant frequency of the silicon micro ring and at least one second whispering gallery mode resonant frequency of the silicon micro ring are separated by an optical phonon frequency of silicon.

NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.