Inventors:
Dean Tran - Westminster CA, US
Jerry T. Fang - Palos Verdes Estates CA, US
Yoshio Saito - Westchester CA, US
Mark Kintis - Manhattan Beach CA, US
Chih Chang - Torrance CA, US
Phu H. Tran - Huntington Beach CA, US
Assignee:
Northrop Grumman Corporation - Los Angeles CA
International Classification:
H01L 29/72
US Classification:
257414, 257728, 438115, 42218629, 2521811, 502400
Abstract:
An integrated getter structure and a method for its formation and installation in a circuit module enclosure (). The integrated structure includes a hydrogen getter structure () and selected quantities of a material () that is formulated to provide both a particle getter function and an RF absorber function. In one embodiment, the material () is placed in discrete quantities over the hydrogen getter structure (). In another embodiment, the hydrogen getter structure () is formed over a sheet of the material () and is provided with apertures () to expose the material ().