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Christopher T Neumann, 63East Lawrenceville, PA

Christopher Neumann Phones & Addresses

Lawrenceville, PA   

Gettysburg, PA   

Thurmont, MD   

Aloha, OR   

Corning, NY   

Ranks

Licence: New Jersey - Active Date: 1991

Mentions for Christopher T Neumann

Career records & work history

Lawyers & Attorneys

Christopher Neumann Photo 1

Christopher J Neumann - Lawyer

Licenses:
New Jersey - Active 1991

Medicine Doctors

Christopher E. Neumann

Specialties:
Surgery , Neurological
Work:
Riverhills HealthcareRiverhills Neuroscience
4805 Montgomery Rd STE 210, Cincinnati, OH 45212
513-2412370 (phone) 513-9846808 (fax)
Site
Riverhills HealthcareRiverhills Neuroscience
4805 Montgomery Rd STE 410, Cincinnati, OH 45212
513-2412370 (phone) 513-2416053 (fax)
Site
Education:
Medical School
University of Illinois, Chicago College of Medicine
Graduated: 2001
Procedures:
Carpal Tunnel Decompression, Craniotomy, Spinal Cord Surgery, Spinal Fusion, Spinal Surgery
Conditions:
Intervertebral Disc Degeneration
Languages:
English, German, Polish, Russian
Description:
Dr. Neumann graduated from the University of Illinois, Chicago College of Medicine in 2001. He works in Cincinnati, OH and 1 other location and specializes in Surgery , Neurological. Dr. Neumann is affiliated with Bethesda North Hospital, Christ Hospital, Good Samaritan Hospital, Mercy Hospital Anderson and The Jewish Hospital.

Christopher Neumann

Specialties:
Pediatrics
Work:
Texas Children's PediatricsTexas Childrens Pediatric Associates
705 S Fry Rd STE 120, Katy, TX 77450
281-3983100 (phone) 281-3983145 (fax)
Site
Education:
Medical School
Baylor College of Medicine
Graduated: 2011
Conditions:
Acute Sinusitis, Acute Upper Respiratory Tract Infections, Attention Deficit Disorder (ADD), Bronchial Asthma, Otitis Media
Languages:
English, Spanish
Description:
Dr. Neumann graduated from the Baylor College of Medicine in 2011. He works in Katy, TX and specializes in Pediatrics. Dr. Neumann is affiliated with Texas Childrens Hospital.

Publications & IP owners

Us Patents

Memory Devices With Reduced Read Disturbance Effects

US Patent:
2023010, Mar 30, 2023
Filed:
Sep 24, 2021
Appl. No.:
17/485306
Inventors:
- Santa Clara CA, US
Shriram SHIVARAMAN - Hillsboro OR, US
Uygar E. AVCI - Portland OR, US
Sarah ATANASOV - Beaverton OR, US
Christopher M. NEUMANN - Portland OR, US
International Classification:
H01L 27/11507
H01L 27/108
H01L 25/065
Abstract:
Embodiments of the disclosure are directed to advanced integrated circuit structure fabrication and, in particular, to memory devices utilizing dead-layer-free materials to reduce disturb effects. Other embodiments may be described or claimed.

Three-Dimensional Ferroelectric Random Access Memory (3D Fram) With Improved Scaling

US Patent:
2023010, Mar 30, 2023
Filed:
Sep 24, 2021
Appl. No.:
17/485317
Inventors:
- Santa Clara CA, US
Uygar E. AVCI - Portland OR, US
Sarah ATANASOV - Beaverton OR, US
Jason PECK - Hillsboro OR, US
Christopher M. NEUMANN - Portland OR, US
International Classification:
H01L 27/11514
H01L 27/11507
Abstract:
Embodiments of the disclosure are directed to advanced integrated circuit structure fabrication and, in particular, to three-dimensional ferroelectric random access memory (3D FRAM) devices with a sense transistor coupled to a plurality of capacitors to (among other things) help improve signal levels and scaling. Other embodiments may be disclosed or claimed.

Stacked Forksheet Transistors

US Patent:
2021040, Dec 30, 2021
Filed:
Jun 26, 2020
Appl. No.:
16/913796
Inventors:
- Santa Clara CA, US
Gilbert DEWEY - Beaverton OR, US
Anh PHAN - Beaverton OR, US
Nicole K. THOMAS - Portland OR, US
Urusa ALAAN - Hillsboro OR, US
Seung Hoon SUNG - Portland OR, US
Christopher M. NEUMANN - Portland OR, US
Willy RACHMADY - Beaverton OR, US
Patrick MORROW - Portland OR, US
Hui Jae YOO - Portland OR, US
Richard E. SCHENKER - Portland OR, US
Marko RADOSAVLJEVIC - Portland OR, US
Jack T. KAVALIEROS - Portland OR, US
Ehren MANNEBACH - Beaverton OR, US
International Classification:
H01L 27/092
H01L 29/06
H01L 29/78
H01L 29/775
H01L 29/423
Abstract:
Embodiments disclosed herein include stacked forksheet transistor devices, and methods of fabricating stacked forksheet transistor devices. In an example, an integrated circuit structure includes a backbone. A first transistor device includes a first vertical stack of semiconductor channels adjacent to an edge of the backbone. A second transistor device includes a second vertical stack of semiconductor channels adjacent to the edge of the backbone. The second transistor device is stacked on the first transistor device.

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