Christian F Kisielowski, 71337 Moraga Ave, Piedmont, CA 94611
Christian Kisielowski Phones & Addresses
337 Moraga Ave, Piedmont, CA 94611 510-6523911
Oakland, CA
Orinda, CA
Eatontown, NJ
Berkeley, CA
Alameda, CA
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Us Patents
Group Iii-Nitride Thin Films Grown Using Mbe And Bismuth
US Patent:
6379472, Apr 30, 2002
Filed:
Nov 10, 2000
Appl. No.:
09/710791
Inventors:
Christian K. Kisielowski - Piedmont CA
Michael Rubin - Berkeley CA
Michael Rubin - Berkeley CA
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
C30B 2938
US Classification:
148 331, 117103, 117108, 117952
Abstract:
The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 m and 20 m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.
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