Craig E Uhrich, 66202 Rutherford Ave, Redwood City, CA 94061
Craig Uhrich Phones & Addresses
202 Rutherford Ave, Redwood City, CA 94061 650-3658297
Olympia, WA
San Mateo, CA
Livermore, CA
Mentions for Craig E Uhrich
Publications & IP owners
Us Patents
Thin Film Optical Measurement System And Method With Calibrating Ellipsometer
US Patent:
6515746, Feb 4, 2003
Filed:
May 3, 2002
Appl. No.:
10/138984
Inventors:
Jon Opsal - Livermore CA
Jeffrey T. Fanton - Los Altos CA
Craig Uhrich - Redwood City CA
Jeffrey T. Fanton - Los Altos CA
Craig Uhrich - Redwood City CA
Assignee:
Therma-Wave, Inc. - Fremont CA
International Classification:
G01J 400
US Classification:
356369, 356630
Abstract:
An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer. A processor determines the polarization state of the light beam entering the analyzer from the intensity measured by the detector, and determines an optical property of the reference sample based upon the determined polarization state, the known wavelength of light from the light generator and the composition of the reference sample.
Calibration And Alignment Of X-Ray Reflectometric Systems
US Patent:
6643354, Nov 4, 2003
Filed:
Apr 17, 2002
Appl. No.:
10/124776
Inventors:
Louis N. Koppel - Menlo Park CA
Craig E. Uhrich - Redwood City CA
Jon Opsal - Livermore CA
Craig E. Uhrich - Redwood City CA
Jon Opsal - Livermore CA
Assignee:
Therma-Wave, Inc. - Fremont CA
International Classification:
G01N 23201
US Classification:
378 86
Abstract:
The present invention relates to the calibration and alignment of an X-ray reflectometry (âXRRâ) system for measuring thin films. An aspect of the present invention describes a method for accurately determining C for each sample placement and for finding the incident X-ray intensity corresponding to each pixel of a detector array and thus permitting an amplitude calibration of the reflectometer system. Another aspect of the present invention relates to a method for aligning an angle-resolved X-ray reflectometer that uses a focusing optic, which may preferably be a Johansson crystal. Another aspect of the present invention is to validate the focusing optic. Another aspect of the present invention relates to the alignment of the focusing optic with the X-ray source. Another aspect of the present invention concerns the correction of measurements errors caused by the tilt or slope of the sample. Yet another aspect of the present invention concerns the calibration of the vertical position of the sample.
Stage Rotation System To Improve Edge Measurements
US Patent:
6707056, Mar 16, 2004
Filed:
Apr 26, 2002
Appl. No.:
10/132959
Inventors:
Jeffrey T. Fanton - Los Altos CA
Craig Uhrich - Redwood City CA
Craig Uhrich - Redwood City CA
Assignee:
Therma-Wave, Inc. - Fremont CA
International Classification:
G01N 2100
US Classification:
25055944, 3562372
Abstract:
A method for operating an optical measurement system is disclosed which permits measurements to be made more uniformly in regions close the edge of a wafer. The optical measurement system includes a probe beam which is focused to an elliptically shaped spot on the surface of the wafer. Improved measurements near the wafers edge are obtained by rotating the wafer with respect to the measurement spot to insure that the short axis of the ellipse is perpendicular to the wafer edge.
X-Ray Reflectance Measurement System With Adjustable Resolution
US Patent:
6744850, Jun 1, 2004
Filed:
Oct 24, 2001
Appl. No.:
10/053373
Inventors:
Jeffrey T. Fanton - Los Altos CA
Craig Uhrich - Redwood City CA
Louis N. Koppel - San Jose CA
Craig Uhrich - Redwood City CA
Louis N. Koppel - San Jose CA
Assignee:
Therma-Wave, Inc. - Fremont CA
International Classification:
G01T 136
US Classification:
378 83, 378 82, 378 70
Abstract:
An x-ray reflectometry system for measuring thin film samples. The system includes an adjustable x-ray source, such that characteristics of an x-ray probe beam output by the x-ray source can be adjusted to improve the resolution of the measurement system. The x-ray probe beam can also be modified to increase the speed of evaluating the thin film sample, for situations where some degree of resolution can be sacrificed. In addition, or alternatively, the system can also provide an adjustable detector position device which allows the position of the detector to be adjusted to increase the resolution of the system, or to reduce the time it takes to evaluate the thin film material.
Thin Film Optical Measurement System And Method With Calibrating Ellipsometer
US Patent:
6753962, Jun 22, 2004
Filed:
Dec 17, 2002
Appl. No.:
10/320907
Inventors:
Jon Opsal - Livermore CA
Jeffrey T. Fanton - Los Altos CA
Craig Uhrich - Redwood City CA
Jeffrey T. Fanton - Los Altos CA
Craig Uhrich - Redwood City CA
Assignee:
Therma-Wave, Inc. - Fremont CA
International Classification:
G01J 400
US Classification:
356369, 356630
Abstract:
An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer. A processor determines the polarization state of the light beam entering the analyzer from the intensity measured by the detector, and determines an optical property of the reference sample based upon the determined polarization state, the known wavelength of light from the light generator and the composition of the reference sample.
Calibration And Alignment Of X-Ray Reflectometric Systems
US Patent:
6768785, Jul 27, 2004
Filed:
Aug 19, 2003
Appl. No.:
10/643348
Inventors:
Louis N. Koppel - Menlo Park CA
Craig E. Uhrich - Redwood City CA
Jon Opsal - Livermore CA
Craig E. Uhrich - Redwood City CA
Jon Opsal - Livermore CA
Assignee:
Therma-Wave, Inc. - Fremont CA
International Classification:
G01N 2320
US Classification:
378 70, 378 54, 378 89
Abstract:
The present invention relates to the calibration and alignment of an X-ray reflectometry (âXRRâ) system for measuring thin films. An aspect of the present invention describes a method for accurately determining C for each sample placement and for finding the incident X-ray intensity corresponding to each pixel of a detector array and thus permitting an amplitude calibration of the reflectometer system. Another aspect of the present invention relates to a method for aligning an angle-resolved X-ray reflectometer that uses a focusing optic, which may preferably be a Johansson crystal. Another aspect of the present invention is to validate the focusing optic. Another aspect of the present invention relates to the alignment of the focusing optic with the X-ray source. Another aspect of the present invention concerns the correction of measurements errors caused by the tilt or slope of the sample. Yet another aspect of the present invention concerns the calibration of the vertical position of the sample.
Small Spot Spectroscopic Ellipsometer With Refractive Focusing
US Patent:
6829049, Dec 7, 2004
Filed:
May 3, 2001
Appl. No.:
09/848733
Inventors:
Craig Uhrich - Redwood City CA
Jianhui Chen - Fremont CA
Jianhui Chen - Fremont CA
Assignee:
Therma-Wave, Inc. - Fremont CA
International Classification:
G01J 400
US Classification:
356369
Abstract:
A broadband ellipsometer is disclosed with an all-refractive optical system for focusing a probe beam on a sample. The ellipsometer includes a broadband light source emitting wavelengths in the UV and visible regions of the spectrum. The change in polarization state of the light reflected from the sample is arranged to evaluate characteristics of a sample. The probe beam is focused onto the sample using a composite lens system formed from materials transmissive in the UV and visible wavelengths and arranged to minimize chromatic aberrations. The spot size on the sample is preferably less than 3 mm and the aberration is such that the focal shift over the range of wavelengths is less than five percent of the mean focal length of the system.
Sample Positioning System To Improve Edge Measurements
US Patent:
6885019, Apr 26, 2005
Filed:
Jan 28, 2004
Appl. No.:
10/766125
Inventors:
Jeffrey T. Fanton - Los Altos CA, US
Craig Uhrich - Redwood City CA, US
Craig Uhrich - Redwood City CA, US
Assignee:
Therma-Wave, Inc. - Fremont CA
International Classification:
G01N021/00
US Classification:
25055944, 2562372
Abstract:
Systems and methods for operating an optical measurement system are disclosed which permit measurements to be made more uniformly in regions close the edge of a sample, such as a wafer. An optical measurement system can include a probe beam that is focused to an elliptically shaped spot on the surface of the sample. Improved measurements near the edge of the sample can be obtained by rotating the wafer with respect to the measurement spot to ensure that the short axis of the ellipse is perpendicular to the wafer edge.
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