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Curtis M Haynes, 7215517 N Chronicle Ct, Mead, WA 99021

Known as:
Kurtis Haynes
Related to:
Valina L Haynes 39 Ryan Brandon May 48

Curtis Haynes Phones & Addresses

Mead, WA   

Hillsboro, OR   

Lake Oswego, OR   

Portland, OR   

Fort Collins, CO   

15517 N Chronicle Ct, Mead, WA 99021   

Work

Position: Executive, Administrative, and Managerial Occupations

Emails

c***[email protected]
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Curtis Haynes resumes & CV records

Resumes

Curtis Haynes Photo 40

Network Administrator At Access Unlimited & Security

Position:
Network Administrator at Access Unlimited & Security
Location:
Spokane, Washington Area
Industry:
Computer Networking
Work:
Access Unlimited & Security
Network Administrator
Curtis Haynes Photo 41

Curtis Haynes

Location:
United States
Curtis Haynes Photo 42

Cashier At Winco Foods

Position:
Cashier at WinCo Foods
Location:
Spokane, Washington Area
Industry:
Supermarkets
Work:
WinCo Foods
Cashier
Curtis Haynes Photo 43

Curtis Haynes

Location:
United States

Publications & IP owners

Us Patents

Implant-Free Heterojunction Bioplar Transistor Integrated Circuit Process

US Patent:
5268315, Dec 7, 1993
Filed:
Sep 4, 1992
Appl. No.:
7/940588
Inventors:
Jayasimha S. Prasad - Tigard OR
Song W. Park - Aloha OR
William A. Vetanen - Sherwood OR
Irene G. Beers - Sherwood OR
Curtis M. Haynes - Portland OR
Assignee:
Tektronix, Inc. - Wilsonville OR
International Classification:
H01L 21265
US Classification:
437 31
Abstract:
The disclosed HBT IC process can fabricate npn heterojunction bipolar transistors, Schottky diodes, MIM capacitors, spiral inductors, and NiCr resistors. Two levels of interconnect metal are available. The first level metal is a conventional dielectric-insulated metal conductor. The second level metal includes an air-bridge for contacting the HBT emitters, which are on top of three level mesa structures. It is also an advanced low loss, low capacitance, air dielectric conductor useful for long interconnects and inductors. MIM capacitors are formed by sandwiching silicon nitride between the first layer metal and a capacitor top plate made with landed air-bridge metal. Precision thin film resistors are fabricated by depositing NiCr on silicon nitride. The three-level active mesa structure is etched down to the GaAs substrate, for lateral device isolation, with a truncated pyramidal shape which permits good step coverage of dielectric and metallization layers. The wet etching process uses a composition of H. sub. 3 PO. sub. 4 :H. sub. 2 O. sub. 2 :H. sub.

Possible Relatives

Cynthia D Haynes  David E Haynes  Dawn M Haynes  Deana E Haynes  Dale R Haynes  Dallas C Haynes  Dalton L Haynes  Curtis R Johnson  Curtis P Stamps  Curtis D Johnston 

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