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Damian Michael Mccann, 632861 Inverness Dr, Los Alamitos, CA 90720

Damian Mccann Phones & Addresses

2861 Inverness Dr, Los Alamitos, CA 90720    562-4309823   

Rossmoor, CA   

Sugar Land, TX   

1145 Teresa Ln, Morgan Hill, CA 95037    408-7822784   

San Jose, CA   

Santa Clara, CA   

3051 Inverness Dr, Los Alamitos, CA 90720    408-2300418   

Work

Position: Construction and Extraction Occupations

Education

Degree: High school graduate or higher

Mentions for Damian Michael Mccann

Damian Mccann resumes & CV records

Resumes

Damian Mccann Photo 19

Associate Director

Location:
Corona, CA
Industry:
Semiconductors
Work:
Microchip Technology
Associate Director - Development Engineering
Microsemi Corporation May 2017 - Jun 2019
Director of Engineering - Rf and Mw - Discrete Products Group
Macom Oct 2014 - Apr 2017
Vice President of Engineering - Rf and Mw
Macom Oct 2014 - Apr 2017
Vice President of Engineering - Aerospace and Defense
Macom Jun 2010 - Dec 2012
Director - New Technology Initiatives
Macom Jun 2010 - Dec 2012
Director of Engineering - Long Beach Office
Mimix Broadband Jun 2005 - Aug 2010
Chief Technology Officer
Celeritek Jul 2001 - Jun 2005
Vice President Advanced Marketing and Technology
Celeritek Jul 1997 - Jul 2001
Director of Engineering
Celeritek Jul 1991 - Jul 1997
Member of Technical Staff
Marconi Electronic Devices Lincoln England May 1984 - Jun 1991
Principle Engineer
May 1984 - Jun 1991
Associate Director
Education:
University of California, Santa Cruz 1996 - 1997
Queen's University Belfast 1980 - 1983
Bachelors, Bachelor of Science, Engineering
St. Colmans College 1973 - 1980
University of California
Skills:
Semiconductors, Rf, Microwave, Ic, Wireless, Electronics, Product Development, Analog, Engineering Management, Manufacturing, Pcb Design, Simulations, Analog Circuit Design, Circuit Design, Electrical Engineering, Radio Frequency, Team Building, Integrated Circuits, Mixed Signal, Wireless Technologies, Family Man, Tennis, Golf, Rf Engineering, Sensors, Amplifiers, Semiconductor Industry, R&D
Damian Mccann Photo 20

Damian Mccann

Publications & IP owners

Us Patents

Circuits And Operating Methods Thereof For Monitoring And Protecting A Device

US Patent:
2020024, Jul 30, 2020
Filed:
Apr 14, 2020
Appl. No.:
16/847896
Inventors:
- Lowell MA, US
Damian McCann - Rossmoor CA, US
International Classification:
H03K 17/16
H01L 29/20
H03F 3/217
H03K 5/24
H03F 1/22
H01L 29/778
H03F 3/72
H03K 17/082
G05F 1/573
H03F 1/52
H02H 3/08
H02H 9/02
Abstract:
Circuits for protecting devices, such as gallium nitride (GaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.

Circuits And Operating Methods Thereof For Correcting Phase Errors Caused By Gallium Nitride Devices

US Patent:
2018000, Jan 4, 2018
Filed:
Jun 30, 2016
Appl. No.:
15/198283
Inventors:
- Lowell MA, US
Damian McCann - Rossmoor CA, US
Assignee:
MACOM Technology Solutions Holdings, Inc. - Lowell MA
International Classification:
H04W 56/00
H03F 1/02
H03F 3/193
Abstract:
Circuits and operating methods thereof for correcting phase errors introduced by amplifiers employing gallium nitride (GaN) transistors are described. The phase errors are caused by trapping effects exhibited by the GaN transistors. The circuits described herein pre-distort the phase of the input signal to compensate for the phase error introduced by the amplifier. Thereby, the phase of the output signal of the amplifier has a reduced phase error. For example, the output signal may have a near zero (or zero) phase error.

Circuits And Operating Methods Thereof For Monitoring And Protecting A Device

US Patent:
2017035, Dec 14, 2017
Filed:
Jun 14, 2016
Appl. No.:
15/181866
Inventors:
- Lowell MA, US
Damian McCann - Rossmoor CA, US
Assignee:
MACOM Technology Solutions Holdings, Inc. - Lowell MA
International Classification:
H03F 1/52
H03F 3/21
H03K 19/0185
H01L 29/20
Abstract:
Circuits for protecting devices, such as gallium nitride (VcclGaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.

Circuits And Operating Methods Thereof For Monitoring And Protecting A Device

US Patent:
2017035, Dec 14, 2017
Filed:
Jun 14, 2016
Appl. No.:
15/181841
Inventors:
- Lowell MA, US
Damian McCann - Rossmoor CA, US
Assignee:
MACOM Technology Solutions Holdings, Inc. - Lowell MA
International Classification:
H03K 17/16
H01L 29/20
H03K 5/24
H01L 29/778
Abstract:
Circuits for protecting devices, such as gallium nitride (GaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.

Isbn (Books And Publications)

The Practice Of Counseling In Primary Care

Author:
Damian McCann
ISBN #:
0761958797

The Practice Of Counseling In Primary Care

Author:
Damian McCann
ISBN #:
0761958800

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