Daniel W Bedell, 49Goshen, VT

7022248, Apr 4, 2006

Aug 29, 2003

10/652878

Daniel Wayne Bedell - San Jose CA, US
Quang Le - San Jose CA, US
Edward Hin Pong Lee - San Jose CA, US
Son Van Nguyen - Los Gatos CA, US
Vladimir Nikitin - Campbell CA, US
Murali Ramasubramanian - San Jose CA, US

Hitachi Global Storage Technologies Netherlands B.V.

B44C 1/22

216 22, 216 13, 216 17, 216 18, 216 88, 216 89, 2960301

A method for patterning a self-aligned coil using a damascene process is disclosed. Coil pockets are formed in a first insulation layer disposed over a first pole layer. A barrier/seed layer is deposited along walls of the coil pockets in the insulation layer. Copper is formed in the coil pockets and over the insulation layer. The copper is planarized down to the insulation layer. The self-aligned coil process packs more copper into the same coil pocket and relaxes the coil alignment tolerance. Protrusions are prevented because of the more efficient and uniform spacing of the coil to reduce heat buildup in the head during a write.

7075750, Jul 11, 2006

Aug 29, 2003

10/652877

Daniel Wayne Bedell - San Jose CA, US
Quang Le - San Jose CA, US
Edward Hin Pong Lee - San Jose CA, US
Son Van Nguyen - Los Gatos CA, US
Vladimir Nikitin - Campbell CA, US
Murali Ramasubramanian - San Jose CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B 5/147

360126, 360123

An apparatus for patterning a self-aligned coil using a damascene process is disclosed. Coil pockets are formed in a first insulation layer disposed over a first pole layer. A barrier/seed layer is deposited along walls of the coil pockets in the insulation layer. Copper is formed in the coil pockets and over the insulation layer. The copper is planarized down to the insulation layer. The self-aligned coil process packs more copper into the same coil pocket and relaxes the coil alignment tolerance. Protrusions are prevented because of the more efficient and uniform spacing of the coil to reduce heat buildup in the head during a write.

7263762, Sep 4, 2007

Sep 30, 2004

10/957038

Daniel Bedell - Gilroy CA, US
Jennifer A. Loo - Gilroy CA, US
Aron Pentek - San Jose CA, US
Murali Ramasubramanian - Fremont CA, US

Hitachi Global Storage Technologies - San Jose CA

G11B 5/127
G11B 5/187

2960301, 2960312, 2960313, 2960314, 2960315, 2960316, 2960318, 360122

A method for reducing plated pole height loss in the formation of a write pole for a magnetic write head is disclosed. The method includes forming a conductive layer on a thin film substrate, forming a photoresist layer on the conductive layer and forming a trench in the photoresist layer. A thick seed layer is then placed on the trench and on the photoresist layer surface using a collimator. Moreover, the process includes plating while applying a voltage to the thin film substrate where the electrically isolated seed layer is removed and the trench is filled with plating material, removing the photoresist layer, and removing the exposed portions of the conductive layer on the thin film substrate.

7363698, Apr 29, 2008

Sep 30, 2004

10/956221

Amanda Baer - Campbell CA, US
Hamid Balamane - Palo Alto CA, US
Daniel Wayne Bedell - Gilroy CA, US
Jyh-Shuey Jerry Lo - San Jose CA, US
Vladimir Nikitin - Campbell CA, US
Aron Pentek - San Jose CA, US
Yvette Winton - San Francisco CA, US

Hitachi Gobal Storage Technologies Inc.

G11B 5/127
H04R 31/00

2960316, 2960313, 2960315, 2960318, 216 22, 216 26, 360122, 360126, 360317, 451 5, 451 41

Methods for creating a write head by forming a bump after the top pole is formed are provided. In one embodiment, a bottom pole is created out of a first layer. A non-magnetic gap material is applied to the surface of the wafer. A top pole is created out of a second layer. After creating the top pole, a bump is created. The bump is used to protect at least a portion of the first layer while etching to create a stray flux absorber.

7380330, Jun 3, 2008

Jul 21, 2005

11/186174

Daniel Wayne Bedell - Gilroy CA, US
Aron Pentek - San Jose CA, US
Katalin Pentek - San Jose CA, US
Yi Zheng - San Ramon CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B 5/127

2960312, 2960307, 2960313, 2960315, 2960318

After defining the P2 pole of a magnetic read head, alumina is deposited over it and planarized by CMP, with the portion of the alumina overlaying the ABS region of the P2 pole subsequently being masked by a photoresist layer and with the portions of the alumina overlaying the flare area, back gap region, and center tap regions of the P2 pole not being masked. A reactive ion mill is performed to expose the flare area, back gap region, and center tap regions of the P2 pole by removing the alumina over these portions, so that subsequent steps such as forming a layer of coiled conductors, forming a return pole, and forming stud connections along with removing the respective seed layers can be executed with the ABS region protected by the alumina and with the flare area, back gap region, and center tap region exposed.

7380332, Jun 3, 2008

Jan 20, 2005

11/040387

Daniel Wayne Bedell - San Jose CA, US
Richard Hsiao - San Jose CA, US
James D. Jarratt - Schenectady NY, US
Patrick Rush Webb - Los Gatos CA, US
Sue Siyang Zhang - Saratoga CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B 5/17

2960325, 2960323, 29606, 216 39

A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i. e. CF/CHF). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H/N/CHF/CHreducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.

7397634, Jul 8, 2008

Jun 23, 2003

10/602462

Daniel Wayne Bedell - San Jose CA, US
Richard Hsiao - San Jose CA, US
James D. Jarratt - Schenectady NY, US
Patrick Rush Webb - Los Gatos CA, US
Sue Siyang Zhang - Saratoga CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B 5/17

360126, 360317

A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i. e. CF/CHF). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H/N/CHF/CHreducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.

7506428, Mar 24, 2009

Sep 30, 2003

10/676728

Daniel Wayne Bedell - San Jose CA, US
Gautam Khera - Morgan Hill CA, US
Quang Le - San Jose CA, US
Aron Pentek - San Jose CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B 5/187

2960312, 2960313, 2960323, 20419234, 360122

A method of fabrication of the write head of a perpendicular recording head allows for production of P pole tips of width less than 200 nm (200×10meters). The method includes fabricating the P flux shaping layer, depositing the P layer, depositing a layer of ion-milling resistant material, depositing at least one sacrificial layer, shaping the P layer into P pole tip, removing the at least one sacrificial layer to leave the P pole tip, and encapsulating the P pole tip.