Daniel R Schuette, 4649 Bow St, Arlington, MA 02474

8426797, Apr 23, 2013

Mar 23, 2010

12/730048

Brian F. Aull - Cambridge MA, US
Matthew J. Renzi - Arlington MA, US
Robert K. Reich - Tyngsboro MA, US
Daniel R. Schuette - Arlington MA, US

Massachusetts Institute of Technology - Cambridge MA

H03K 21/40

250214R, 377 19, 377 51

Embodiments of the present invention include complementary metal-oxide-semiconductor (CMOS) readout architectures for photon-counting arrays with a photon-counting detector, a digital counter, and an overflow bit in each of the sensing elements in the array. Typically, the photon-counting detector is a Geiger-mode avalanche photodiode (APD) that emits brief pulses every time it detects a photon. The pulse increments the digital counters, which, in turn, sets the overflow bit once it reaches a given count. A rolling readout system operably coupled to each sensing element polls the overflow bit, and, if the overflow bit is high, initiates a data transfer from the overflow bit to a frame store. Compared to other photo-counting imagers, photon-counting imagers with counters and overflow bits operate with decreased transfer bandwidth, high dynamic range, and fine spatial resolution.

2011023, Sep 29, 2011

Mar 23, 2010

12/730037

David C. Shaver - Carlisle MA, US
Bernard B. Kosicki - Acton MA, US
Robert K. Reich - Tyngsboro MA, US
Dennis D. Rathman - Ashland MA, US
Daniel R. Schuette - Arlington MA, US
Brian F. Aull - Cambridge MA, US

Massachusetts Institute of Technology - Cambridge MA

H01L 27/148
H01L 31/18
H01L 31/107

2502141, 438 91, 257E31063, 257E27151

Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.

2012033, Dec 27, 2012

Jun 26, 2012

13/533254

Nandini Rajan - Lincoln MA, US
Sumanth Kaushik - Belmont MA, US
Daniel Schuette - Arlington MA, US

Massachusetts Institute of Technology - Cambridge MA

A61B 6/00
H04N 7/18
G06K 9/00

600476, 382128, 348 78, 348E07085

Traditional methods of detecting a moving target involve acquisition of video rate imagery in which data is acquired, stored, transmitted and then processed. Processing requires software for high precision frame-to-frame registration, detection and tracking. Example embodiments of the present invention include a method and an apparatus for generating instantaneous velocity maps that do not require acquisition, transmission, storing or processing of video-rate data. Incident radiation is directed onto one or more detectors, the detectors operating at a frame rate. The detectors acquire the first and second complementary sub-images of a single frame. The first and second complementary sub-images are combined to yield the change detection map. Example embodiments of the methods and devices described herein can be used in automatic detection of motion without tracking, optimization of image deblurring and optimization of detection of high speed and high frequency events, among others.

2014000, Jan 9, 2014

Dec 3, 2012

13/692306

Massachusetts Institute of Technology - , US
Bernard B. Kosicki - Acton MA, US
Robert K. Reich - Tyngsboro MA, US
Dennis D. Rathman - Ashland MA, US
Daniel R. Schuette - Arlington MA, US
Brian F. Aull - Cambridge MA, US

Massachusetts Institute of Technology - Cambridge MA

H04N 5/378
H01L 31/18

2502081, 438 91

Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.

2020031, Oct 8, 2020

Jan 31, 2020

16/778042

Brian F. AULL - Cambridge MA, US
Joseph S. Ciampi - Westford MA, US
Renee D. Lambert - Framingham MA, US
Christopher Leitz - Watertown MA, US
Karl Alexander McIntosh - Groton MA, US
Steven Rabe - W. Roxbury MA, US
Kevin Ryu - Arlington MA, US
Daniel R. SCHUETTE - Arlington MA, US
David Volfson - Sharon MA, US

G01T 1/24
H01L 27/146

A chip-to-chip integration process for rapid prototyping of silicon avalanche photodiode (APD) arrays has been developed. This process has several advantages over wafer-level 3D integration, including: (1) reduced cost per development cycle since a dedicated full-wafer read-out integrated circuit (ROIC) fabrication is not needed, (2) compatibility with ROICs made in previous fabrication runs, and (3) accelerated schedule. The process provides several advantages over previous processes for chip-to-chip integration, including: (1) shorter processing time as the chips can be diced, bump-bonded, and then thinned at the chip-level faster than in a wafer-level back-illumination process, and (2) the CMOS substrate provides mechanical support for the APD device, allowing integration of fast microlenses directly on the APD back surface. This approach yields APDs with low dark count rates (DCRs) and higher radiation tolerance for harsh environments and can be extended to large arrays of APDs.