Darryl Draper resumes & CV records
Resumes
Darryl P Draper, 6320 Endicott St, Congers, NY 10920
Darryl Draper Phones & Addresses
20 Endicott St, Congers, NY 10920 845-2685081
Nanuet, NY
New City, NY
Social networks
Darryl P Draper
Linkedin
Mentions for Darryl P Draper
Publications & IP owners
Us Patents
Method For Consolidating And Diffusion-Bonding Powder Metallurgy Sputtering Target
US Patent:
8206646, Jun 26, 2012
Filed:
Dec 22, 2006
Appl. No.:
11/644816
Inventors:
Chi-Fung Lo - Fort Lee NJ, US
Darryl Draper - Congers NY, US
Darryl Draper - Congers NY, US
Assignee:
Praxair Tecnology, Inc. - Danbury CT
International Classification:
B22F 1/00
US Classification:
419 38, 419 8, 419 25, 419 26, 419 48, 266274, 20429813
Abstract:
Methods for manufacturing sputtering target assemblies and assemblies thereof are provided, particularly targets made of powders. Powders are adhered to a backing plate by use of a vacuum hot press, the powder preferably contacted by non-planar surfaces, and is compressed with at least about 95% density and substantially simultaneously diffusion-bonded to the backing plate.
Bonded Sputtering Target And Methods Of Manufacture
US Patent:
2008023, Oct 2, 2008
Filed:
Mar 30, 2007
Appl. No.:
11/731106
Inventors:
Chi-Fung Lo - Fort Lee NJ, US
Darryl draper - Congers NY, US
Darryl draper - Congers NY, US
International Classification:
C23C 14/00
B32B 38/00
B32B 38/00
US Classification:
156283, 20429812
Abstract:
Methods for manufacturing sputtering target assemblies by bonding target materials to backing plates using metals and alloys in powder form to achieve substantially 100% bonding at temperatures achieved in a vacuum hot press.
Method For Production Of Aluminum Containing Targets
US Patent:
2010014, Jun 10, 2010
Filed:
Dec 9, 2008
Appl. No.:
12/330996
Inventors:
Chi-Fung Lo - Fort Lee NJ, US
Darryl Draper - Congers NY, US
Paul Gilman - Suffern NY, US
Darryl Draper - Congers NY, US
Paul Gilman - Suffern NY, US
International Classification:
C23C 14/34
B22F 3/24
B22F 3/24
US Classification:
20429813, 419 28
Abstract:
A method of manufacturing a sputter target is provided which comprises mixing aluminum and at least one other metallic powder to form a powder blend, compressing said powder blend under significant force to achieve a pressed blank having a packing density of at least 50% of the theoretical density, heating the blank at a temperature less then the temperature which would form greater than an average of 25% inter-metallic phases in the blank under the conditions employed, rolling the blank to obtain at least 95% of the theoretical thickness of the blank, and bonding the blank to a suitable substrate. Also provided is a sputter target made from this method.
Method For Consolidating And Diffusion-Bonding Powder Metallurgy Sputtering Target
US Patent:
2012022, Sep 13, 2012
Filed:
May 29, 2012
Appl. No.:
13/482482
Inventors:
Chi-Fung Lo - Fort Lee NJ, US
Darryl Draper - Congers NY, US
Darryl Draper - Congers NY, US
International Classification:
C23C 14/34
B30B 13/00
C23C 14/14
B30B 13/00
C23C 14/14
US Classification:
20429813, 20429812, 100 35
Abstract:
Methods for manufacturing sputtering target assemblies and assemblies thereof are provided, particularly targets made of powders. Powders are adhered to a backing plate by use of a vacuum hot press, the powder preferably contacted by non-planar surfaces, and is compressed with at least about 95% density and substantially simultaneously diffusion-bonded to the backing plate.
Cryogenic Annealing Of Sputtering Targets
US Patent:
6056857, May 2, 2000
Filed:
Aug 13, 1997
Appl. No.:
8/910334
Inventors:
Thomas J. Hunt - Peekskill NY
Paul S. Gilman - Suffern NY
James E. Joyce - Bedford NY
Chi-Fung Lo - Fort Lee NJ
Darryl Draper - Congers NY
Paul S. Gilman - Suffern NY
James E. Joyce - Bedford NY
Chi-Fung Lo - Fort Lee NJ
Darryl Draper - Congers NY
Assignee:
Praxair S.T. Technology, Inc. - North Haven CT
International Classification:
C23C 1434
US Classification:
20419215
Abstract:
Sputtering targets are cryogenically annealed to provide a uniformly dense molecular structure by placing the target in a temperature-controlled cryogenic chamber and cooling the chamber to a cryogenic temperature at a controlled rate. The target is maintained at a cryogenic temperature to cryogenically anneal the target and the target is subsequently returned to ambient or elevated temperature. Improvements in sputtered particle performance and early life film uniformity are achieved with the cryo-annealed targets.
Method For Fabricating Randomly Oriented Aluminum Alloy Sputtering Targets With Fine Grains And Fine Precipitates
US Patent:
5766380, Jun 16, 1998
Filed:
Nov 5, 1996
Appl. No.:
8/743305
Inventors:
Chi-Fung Lo - Fort Lee NJ
Darryl Draper - Congers NY
Darryl Draper - Congers NY
Assignee:
Sony Corporation - Tokyo
Materials Research Corporation - Gilbert AZ
Materials Research Corporation - Gilbert AZ
International Classification:
C22C 2100
US Classification:
148577
Abstract:
A method of fabricating an alloy sputtering target having fine precipitates of the second phase material and small, randomly oriented and uniform grains. The new method includes solution treatment to minimize second-phase precipitate size, cryo-deformation to prevent the formation of cubic structures and recrystallization to generate fine uniform grain sizes having a random orientation.
Method Of Making High-Density, High-Purity Tungsten Sputter Targets
US Patent:
6328927, Dec 11, 2001
Filed:
Dec 24, 1998
Appl. No.:
9/220906
Inventors:
Chi-Fung Lo - Fort Lee NJ
Paul S. Gilman - Suffern NY
Darryl Draper - Congers NY
Paul S. Gilman - Suffern NY
Darryl Draper - Congers NY
Assignee:
Praxair Technology, Inc. - North Haven CT
International Classification:
B22F 314
US Classification:
419 45
Abstract:
A method is provided for fabricating tungsten sputter targets having a density of at least about 97% of theoretical density and an oxygen content of at least about 100 ppm less than the starting powder. According to the principles of the present invention, a tungsten powder having a powder size less than about 50. mu. m and an oxygen content less than about 500 ppm is hot-isostatic pressed at a temperature of about 1200. degree. C. to about 1600. degree. C. and a pressure of at least about 15 ksi for at least about 3 hours. A high-purity sputter target is further achieved by using a tungsten starting powder having a purity higher than about 99. 999%.
Method Of Making High Density Sputtering Targets
US Patent:
6165413, Dec 26, 2000
Filed:
Jul 8, 1999
Appl. No.:
9/349666
Inventors:
Chi-Fung Lo - Fort Lee NJ
Darryl Draper - Congers NY
Paul S. Gilman - Suffern NY
Darryl Draper - Congers NY
Paul S. Gilman - Suffern NY
Assignee:
Praxair S.T. Technology, Inc. - Danbury CT
International Classification:
B22F 315
US Classification:
419 49
Abstract:
There is provided a method for fabricating high density sputter targets by pre-packing a powder bed by hot pressing or vibration between metal plates, followed by hot isostatic pressing. This method is especially suitable for preparing sputter targets with a radius to thickness ratio of at least 3 and a density of at least 96% of theoretical.
NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.