Daryl Key resumes & CV records
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Daryl R Key, 38La Canada, CA
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La Canada Flintridge, CA
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Us Patents
Seed Crystal For Growth Of Gallium Nitride Bulk Crystal In Supercritical Ammonia And Fabrication Method
US Patent:
2019009, Mar 28, 2019
Filed:
Sep 26, 2017
Appl. No.:
15/716491
Inventors:
- Buellton CA, US
Edward Letts - Buellton CA, US
Daryl Key - La Canada CA, US
Edward Letts - Buellton CA, US
Daryl Key - La Canada CA, US
International Classification:
C30B 29/40
C30B 7/10
C30B 7/10
Abstract:
In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.
Seed Crystal For Growth Of Gallium Nitride Bulk Crystal In Supercritical Ammonia And Fabrication Method.,/
US Patent:
2019009, Mar 28, 2019
Filed:
Sep 26, 2017
Appl. No.:
15/716499
Inventors:
- Buellton CA, US
Edward Letts - Buellton CA, US
Daryl Key - La Canada CA, US
Edward Letts - Buellton CA, US
Daryl Key - La Canada CA, US
International Classification:
H01L 21/02
H01L 21/203
H01L 21/203
Abstract:
In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.
Seed Crystal For Growth Of Gallium Nitride Bulk Crystal In Supercritical Ammonia And Fabrication Method
US Patent:
2019009, Mar 28, 2019
Filed:
Sep 26, 2017
Appl. No.:
15/716502
Inventors:
- Buellton CA, US
Edward Letts - Buellton CA, US
Daryl Key - La Canada CA, US
Edward Letts - Buellton CA, US
Daryl Key - La Canada CA, US
International Classification:
H01L 21/02
H01L 21/203
H01L 21/203
Abstract:
In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.
Seed Selection And Growth Methods For Reduced-Crack Group Iii Nitride Bulk Crystals
US Patent:
2016021, Jul 28, 2016
Filed:
Jan 22, 2016
Appl. No.:
15/004464
Inventors:
- Buellton CA, US
- Seoul, KR
Daryl Key - La Canada CA, US
- Seoul, KR
Daryl Key - La Canada CA, US
International Classification:
C30B 7/10
G01N 23/207
C30B 29/40
G01N 23/207
C30B 29/40
Abstract:
In one instance, the invention provides a method of growing bulk crystal of group III nitride using a seed crystal selected by (a) measuring x-ray rocking curves of a seed crystal at more than one point, (b) quantifying the peak widths of the measured x-ray rocking curves, and (c) evaluating the distribution of the quantified peak widths. The invention also includes the method of selecting a seed crystal for growing bulk crystal of group III nitride.The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed selected by the method above.
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