David L Angst6715 Memorial Rd, New Tripoli, PA 18066

6342442, Jan 29, 2002

Nov 20, 1998

09/197074

David L. Angst - New Tripoli PA
David Gerald Coult - Oley PA
John William Osenbach - Kutztown PA
Brian Stauffer Auker - Denver PA

Agere Systems Guardian Corp. - Orlando FL

H01L 2348

438612, 438613

An improved method and solder composition for kinetically controlled part bonding. The method involves applying at least a first chemical element layer of an intermetallic compound to a first part and applying at least a second chemical element layer of the intermetallic compound to a second part. The first and second parts are placed together so that the chemical element layers contact each other. The parts are heated from a storage temperature to a bonding temperature which is slightly above a first melting temperature that melts the chemical element layer of one of the first and second parts into a liquid mixture. The composition of liquid mixture varies with time during heating due to the formation of the intermetallic compound therein by progressive incorporation of the other one of the first and second chemical element layers into the mixture. The melting temperature of the liquid mixture increases with time as the composition changes until the melting temperature of the liquid mixture is about equal to the bonding temperature thereby soldifying the liquid mixture into a bond. The parts are then held at a holding temperature which is higher than the storage temperature to maintain diffusion of the other one of the first and second chemical element layers into the bond.

7009299, Mar 7, 2006

Oct 29, 2001

10/021174

David L. Angst - New Tripoli PA, US
David Gerald Coult - Oley PA, US
John William Osenbach - Kutztown PA, US
Brian Stauffer Auker - Denver PA, US

Agere Systems, Inc. - Allentown PA

H01L 23/48
H01L 23/52
H01L 29/40

257772, 257748

An improved method and solder composition for kinetically controlled part bonding. The method involves applying at least a first chemical element layer of an intermetallic compound to a first part and applying at least a second chemical element layer of the intermetallic compound to a second part. The first and second parts are placed together so that the chemical element layers contact each other. The parts are heated from a storage temperature to a bonding temperature which is slightly above a first melting temperature that melts the chemical element layer of one of the first and second parts into a liquid mixture. The composition of liquid mixture varies with time during heating due to the formation of the intermetallic compound therein by progressive incorporation of the other one of the first and second chemical element layers into the mixture. The melting temperature of the liquid mixture increases with time as the composition changes until the melting temperature of the liquid mixture is about equal to the bonding temperature thereby soldifying the liquid mixture into a bond. The parts are then held at a holding temperature which is higher than the storage temperature to maintain diffusion of the other one of the first and second chemical element layers into the bond.

2009023, Sep 24, 2009

Mar 23, 2009

12/409267

David Angst - New Tripoli PA, US
Peng Zhang - Montvale NJ, US
Jeffrey Barnes - New Milford CT, US
Prerna Sonthalia - Mumbai, IN
Emanuel Cooper - Scarsdale NY, US
Karl Boggs - Hopewell Junction NY, US

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

C11D 7/32

510175

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.