David W BenzingWest Sacramento, CA

6492774, Dec 10, 2002

Oct 4, 2000

09/684695

Taejoon Han - Pleasanton CA
David W. Benzing - San Jose CA
Albert R. Ellingboe - Lucan, IE

Lam Research Corporation - Fremont CA

H01J 724

31511121, 31511171, 156345

A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

6669253, Dec 30, 2003

Dec 18, 2000

09/740677

David W. Benzing - San Jose CA, 95118-1212
Christopher A. Luebker - Coppell TX, 75019

B65G 4907

294 15, 294 16, 294 271, 206711, 206832, 118500, 118728

A wafer boat and boat handle are designed for automatic interlocking engagement and release upon manipulation by a user. The boat includes a side rail with a lip for engagement within a slot formed in the handle, and a handle cam activating contact surface for contacting a gripping block member of the handle. The handle includes at least one boat holding block with a boat lip holding slot therewithin. The handle also includes at least one boat gripping block that is rotatably engaged with the holding block, and which includes a frontwardly projecting rail gripping flange. When the boat lip is brought into the holding block slot, the gripping block rotates and the flange is brought over the top of the rail. The boat rail is thereby held between the slot and the flange of the handle, such that the boat may be lifted and moved.

6823815, Nov 30, 2004

Aug 21, 2002

10/225655

Taejoon Han - Pleasanton CA
David W. Benzing - San Jose CA
Albert R. Ellingboe - Lucan, IE

Lam Research Corporation - Fremont CA

C23C 1600

118723E, 31511121

A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

6974523, Dec 13, 2005

May 16, 2001

09/859091

David W. Benzing - San Jose CA, US
Babak Kadkhodayan - Oakland CA, US

Lam Research Corporation - Fremont CA

H01L021/00

15634547, 15634543

The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.

7470627, Dec 30, 2008

Oct 15, 2004

10/966232

Taejoon Han - Pleasanton CA, US
David W. Benzing - San Jose CA, US
Albert R. Ellingboe - Lucan, IE

Lam Research Corporation - Fremont CA

H01L 21/205
C23C 4/10

438710, 31511121, 118723 R

A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

8465620, Jun 18, 2013

May 15, 2008

12/121047

David W. Benzing - San Jose CA, US
Babak Kadkhodayan - Oakland CA, US

Lam Research - Fremont CA

H01L 21/00

15634547

The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.

2002012, Sep 12, 2002

Dec 29, 2000

09/749916

Jerome Hubacek - Fremont CA, US
Albert Ellingboe - Co Dublin, IE
David Benzing - San Jose CA, US

H01L021/3065
C23C016/00
H01L021/302
C23F001/02

438/689000, 156/345430, 118/72300E

A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.

2006002, Feb 9, 2006

Oct 11, 2005

11/248779

David Benzing - San Jose CA, US
Babak Kadkhodayan - Oakland CA, US

C23F 1/00

156345470, 216067000

The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.