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David Dwayne Bethke, 47Austin, TX

David Bethke Phones & Addresses

Austin, TX   

39 County Road 378, Crane Hill, AL 35053    256-6127201   

2001 Heritage Ln SW, Hartselle, AL 35640    256-7736369   

Corpus Christi, TX   

Houston, TX   

Work

Company: Sailpoint technologies 2012 Position: Summer contractor) software test engineer

Education

School / High School: Austin Community College 2011 Specialities: STL in Leadership

Mentions for David Dwayne Bethke

David Bethke resumes & CV records

Resumes

David Bethke Photo 35

David Bethke

Industry:
Government Relations
Work:
Us Embassy South Africa
Na
David Bethke Photo 36

David Bethke

David Bethke Photo 37

David Bethke - Austin, TX

Work:
SailPoint Technologies 2012 to Present
summer contractor) Software Test Engineer
Advanced Micro Devices 1993 to 2011
Member of Technical Staff
Education:
Austin Community College 2011 to 2012
STL in Leadership
University of Illinois Urbana - Urbana-Champaign, IL
BSEE in Communications Circuits and Signal Processing

Publications & IP owners

Us Patents

Photon Beacon

US Patent:
6833718, Dec 21, 2004
Filed:
Dec 20, 2002
Appl. No.:
10/324328
Inventors:
David Bethke - Austin TX
Michael R. Bruce - Austin TX
Shawn M. McBride - Austin TX
Greg Dabney - Austin TX
Glen Gilfeather - Del Valle TX
Rama Goruganthu - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G01R 31302
US Classification:
324752, 3241581
Abstract:
Various apparatus and methods for enhancing hot-electron luminescence in an integrated circuit are provided. In one aspect, an apparatus is provided that includes a first circuit device coupled to a first voltage source that is operable to bias the first circuit device to a first voltage, and a second circuit device that has a first input coupled to the first voltage source and a junction defining a first side and a second side. One of the first and second sides is coupled to a second voltage source that is independent of the first voltage source and capable of selectively biasing the one of the first and second sides at a second voltage higher than the first voltage. The second device is operable to emit a hot-electron induced photon upon entry into saturation.

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