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David W Cronk, 708943 Highland Dawn, San Antonio, TX 78254

Known as:
David William Cronk David W Cowles William Cronk
Related to:
Sherylyn Cummings Arline Cronk 81 Amy A Cronk 50 Elizabeth A Cronk 68

David Cronk Phones & Addresses

8943 Highland Dawn, San Antonio, TX 78254   

Mesa, AZ   

Queen Creek, AZ   

San Tan Valley, AZ   

Santa Fe, NM   

Chandler, AZ   

Pinedale, AZ   

Webster, NY   

9902 Pony Spur, San Antonio, TX 78254   

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David Cronk resumes & CV records

Resumes

David Cronk Photo 48

David Cronk

Location:
San Antonio, TX
Work:
Inacap
Student
Education:
Inacap 2013 - 2017
David Cronk Photo 49

Server Administrator

Work:
United States Marine Corps
Server Administrator
David Cronk Photo 50

David Cronk

David Cronk Photo 51

David Cronk

David Cronk Photo 52

David Cronk

David Cronk Photo 53

David Cronk

David Cronk Photo 54

Regional Bank President At Us Bank

Position:
Regional Bank President at US Bank
Location:
Spencer, Iowa
Industry:
Banking
Work:
US Bank since Dec 1990
Regional Bank President
Education:
University of Arkansas at Fayetteville 1977 - 1978
MBA, Finance Buena Vista University 1974 - 1977
BA, Banking and Finance
David Cronk Photo 55

David Cronk

Location:
United States

Publications & IP owners

Us Patents

Mram With High Gmr Ratio

US Patent:
5828598, Oct 27, 1998
Filed:
May 23, 1997
Appl. No.:
8/862738
Inventors:
Eugene Chen - Gilbert AZ
Saied N. Tehrani - Tempe AZ
David W. Cronk - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
G11C 700
US Classification:
365158
Abstract:
A magnetic memory cell with increased GMR ratio includes first and second layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material sandwiched between the first and second layers of magnetic material. Each of the first and second layers is switchable between a first and a second magnetic state and is formed to switch states with the application of a substantially equal magnetic field. A third layer of magnetic material is positioned adjacent one of the first and second layers of magnetic material so as to alter the amount of magnetic field required to switch the states of the one of the first and second layers of magnetic material. The third layer of magnetic material can be formed with a width larger than the cell width to increase the magnetic width of the cell and reduce the magnetic field required to switch states.

Possible Relatives

Dawn Cronk  Aaron A Cronk  Denise J Cronk  Dennis W Cronk  Daryl T Cronk  Diane Cronk  Dolores J Cronk  David Last  David W Johnson  David Stamps 

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