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David L Crow, 46501 Briargate Rd, Washington, IL 61571

David Crow Phones & Addresses

Washington, IL   

4303 W Richwoods Blvd, Peoria, IL 61615    309-4727875   

Minneapolis, MN   

Ranks

Licence: Dist. of Columbia - Active Date: 1990

Mentions for David L Crow

Career records & work history

Lawyers & Attorneys

David Crow Photo 1

David W Crow - Lawyer

Licenses:
Dist. of Columbia - Active 1990
David Crow Photo 2

David Crow - Lawyer

Specialties:
Personal Injury, Wrongful Death, Civil Litigation, Insurance Litigation, Insurance Coverage, Civil Rights
ISLN:
908100710
Admitted:
1973
University:
University of Florida, B.S.B.A., 1968
Law School:
University of Florida, J.D., 1972

Medicine Doctors

David S. Crow

Specialties:
Otolaryngology
Work:
Advanced Pacific
1830 Wl St STE 103, Wailuku, HI 96793
808-2445999 (phone) 808-2441295 (fax)
Education:
Medical School
University of Hawaii Burns School of Medicine
Graduated: 1993
Procedures:
Myringotomy and Tympanotomy, Rhinoplasty, Sinus Surgery, Tracheostomy, Tympanoplasty, Allergen Immunotherapy, Allergy Testing, Hearing Evaluation
Conditions:
Acute Pharyngitis, Acute Sinusitis, Acute Upper Respiratory Tract Infections, Allergic Rhinitis, Benign Paroxysmal Positional Vertigo, Chronic Sinusitis, Deviated Nasal Septum, Hearing Loss, Laryngeal Cancer, Obstructive Sleep Apnea, Otitis Media
Languages:
English, Spanish, Tagalog
Description:
Dr. Crow graduated from the University of Hawaii Burns School of Medicine in 1993. He works in Wailuku, HI and specializes in Otolaryngology. Dr. Crow is affiliated with Maui Memorial Medical Center.
David Crow Photo 3

David S Crow

Specialties:
Otolaryngology
Otolaryngic Allergy
Pediatric Otolaryngology
Plastic and Reconstructive Surgery
Education:
University of Hawaii (1993)

License Records

David J Crow

Licenses:
License #: 260043-5555 - Expired
Category: Lien Recovery Fund Member
Type: LRF Individual Member

Publications & IP owners

Us Patents

Contact Monitor, Method Of Forming Same And Method Of Analizing Contact-, Via- And/Or Trench-Forming Processes In An Integrated Circuit

US Patent:
6518591, Feb 11, 2003
Filed:
Apr 28, 2000
Appl. No.:
09/561293
Inventors:
Edward M. Shamble - North Stillwater MN
Thomas Boonstra - Minneapolis MN
David J. Brownell - Eden Prairie MN
David A. Crow - Eagan MN
Assignee:
Cypress Semiconductor Corporation - San Jose CA
International Classification:
H01L 2358
US Classification:
257 48, 257622
Abstract:
Methods for monitoring defects in a process for forming a contact hole, via or trench in a layer of a device in an integrated circuit includes the steps of forming a sacrificial topology on a substrate by duplicating at least a portion of a structure of the device while substituting a material substantially free of elemental silicon for any elemental silicon present in the device to be monitored, etching the sacrificial topology at least to the substrate, removing at least a portion of the sacrificial topology, and inspecting the substrate using a wafer surface inspection tool. The substituted material, such as a dielectric material, can be easily etched and removed from the substrate, as compared to polysilicon. The etching step preferably creates an indentation in the substrate that is readily detectable by the wafer surface inspection tool. The etching step is preferably a selective etching step, having a selectivity of at least 10:1.

Contact Monitor, Method Of Forming Same And Method Of Analyzing Contact-, Via-And/Or Trench-Forming Processes In An Integrated Circuit

US Patent:
6121156, Sep 19, 2000
Filed:
Dec 2, 1998
Appl. No.:
9/204215
Inventors:
Edward M. Shamble - North Stillwater MN
Thomas Boonstra - Minneapolis MN
David J. Brownell - Eden Prairie MN
David A. Crow - Eagan MN
Assignee:
Cypress Semiconductor Corporation - San Jose CA
International Classification:
H01L 2100
US Classification:
438734
Abstract:
Methods for monitoring defects in a process for forming a contact hole, via or trench in a layer of a device in an integrated circuit includes the steps of forming a sacrificial topology on a substrate by duplicating at least a portion of a structure of the device while substituting a material substantially free of elemental silicon for any elemental silicon present in the device to be monitored, etching the sacrificial topology at least to the substrate, removing at least a portion of the sacrificial topology, and inspecting the substrate using a wafer surface inspection tool. The substituted material, such as a dielectric material, can be easily etched and removed from the substrate, as compared to polysilicon. The etching step preferably creates an indentation in the substrate that is readily detectable by the wafer surface inspection tool. The etching step is preferably a selective etching step, having a selectivity of at least 10:1.

Isbn (Books And Publications)

Visible Signs

Author:
David Crow
ISBN #:
2884790357

Visible Signs: An Introduction To Semiotics

Author:
David Crow
ISBN #:
2940373213

Left To Right: The Cultural Shift From Words To Pictures

Author:
David Crow
ISBN #:
2940373361

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